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CED04N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■700V,3.5A,RDS(ON)=3.3Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED04N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V,3.5A,RDS(ON)=3.3W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF04N7

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEF04N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF04N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEI04N7

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP04N7

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP04N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP04N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU04N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 700V,3.5A,RDS(ON)=3.3W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU04N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■700V,3.5A,RDS(ON)=3.3Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

详细参数

  • 型号:

    CED04N7G

  • 制造商:

    CET

  • 制造商全称:

    Chino-Excel Technology

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
CET/華瑞
24+
TO-251
156718
明嘉莱只做原装正品现货
询价
CET
22+
TO251
50000
一级代理,放心购买!
询价
CET
2020+
TO-251
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
CET
21+
TO-251
2357
原装现货假一赔十
询价
C
23+
TO-251
10000
公司只做原装正品
询价
华瑞
23+
TO-252
50000
全新原装正品现货,支持订货
询价
CET/華瑞
2022+
TO-251
50000
原厂代理 终端免费提供样品
询价
C
23+
TO-251
6000
原装正品,支持实单
询价
CET
17+
TO-251
2357
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
sino
2023+
TO-251
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多CED04N7G供应商 更新时间2024-11-21 17:30:00