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FRK260H

46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FRK260R

46A,200V,0.070Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FSE-260-K

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

FSE-260-K/Q

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

FSE-260-L

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

FSE-260-L/Q

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

FSE-260-P

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

FSE-260-P/Q

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

FSE-260-R

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

FSE-260-R/Q

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

FSFM260N

Green-ModeFairchildPowerSwitch(FPS™)

Description TheFSFM260/261/300isanintegratedPulseWidthModulator(PWM)andSenseFETspecificallydesignedforhigh-performanceofflineSwitchModePowerSupplies(SMPS)withminimalexternalcomponents. Thisdeviceisanintegratedhigh-voltagepowerswitchingregulatorthatcombinesanav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FSGYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFET

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSJ260D

44A,200V,0.050Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ260R

44A,200V,0.050Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSMD260R

SurfaceMountablePTCResettableFuse:FSMD1812Series

FUZETECFuzetec Technology Co., Ltd.

富致科技富致科技股份有限公司

FSMD260R

SurfaceMountablePTCResettableFuse:FSMD1812Series

RFERFE international

RFE国际公司RFE国际股份有限公司

FSPYC260F

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSYC260D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

详细参数

  • 型号:

    FRK260H

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs

供应商型号品牌批号封装库存备注价格
富致
2021+
DIP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
FUZETEC
21+
DIP
5000
原装现货/假一赔十/支持第三方检验
询价
FUZETEC
22+
DIP
54157
郑重承诺只做原装进口货
询价
FUZETEC
22+
DIP
54157
只做原装进口现货
询价
FUZETEC(富致)
23+
插件
6000
诚信服务,绝对原装原盘
询价
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
询价
FUZETEC TECHNOLOGY CO.
10000
全新原装现货 样品可售
询价
STANLEY
22+23+
06030805
31101
绝对原装正品全新进口深圳现货
询价
STANLEY
20+
LED
83000
LED原装优势主营型号-可开原型号增税票
询价
WW RES 1W 15R K 12.5*5 Max. 2.
24+
11000
国外库存货期1-2周
询价
更多FRK260H供应商 更新时间2024-11-28 15:00:00