IFBF510

N-ChannelJFET

Features •InterFETN0026Geometry •LowNoise:3nV/√HzTypical •LowCiss:5.0pFMaximum •LowLeakage:10pATypical •RoHSCompliant •SMT,TH,andBareDiePackageoptions. Applications •LowNoiseHighGain •ReplacementforBF510andBF511 •Mixers •Oscillators •VHFAmplifier

ILX510

5150-pixelCCDLinearSensor(B/W)

Description TheILX510isareductiontypeCCDlinearsensordevelopedforhighresolutioncopiers.ThissensorreadsA3-sizedocumentsatadensityof400DPI,andA4-sizedocumentsatadensityof600DPIathighspeed. Features •Numberofeffectivepixels:5150pixels •Pixelsize:7µm×7

INDIGO510

Indigo510TransmitterForVaisalaIndigo-compatibleprobes

Features Touchscreendisplay(optional non-displaymodelwithLED indicatoralsoavailable) Dataloggingofallmeasurement parameters IP66andNEMA4ratedmetal enclosure 2configurablegalvanically isolatedanalogoutputs Ethernetconnectionwithweb interfaceforremoteaccess Modb

INMP510

RF-Hardened,Ultra-LowNoiseMicrophonewithBottomPortandAnalogOutput

INMP510

AnalogOutputMEMSMicrophoneFlexEvaluationBoardUserGuide

IP510

SupportsIntel짰Core??Duoprocessors,533/667MHzFSB

IPC-510

4URackmountChassiswithFrontUSBandPS/2Interfaces

IPC-510

Economical4URackmountChassiswithFront-AccessibleUSBandPS/2Interfaces

IRF510

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=5.6A)

HEXFETpowerMOSFET.VDSS=100V,RDS(on)=0.54Ohm,ID=5.6A

IRF510

N-ChannelPowerMOSFETs,5.5A,60-100V

N-ChannelPowerMOSFETs,5.5A,60-100V

IRF510

4.9A,and5.6A,80Vand100V,0.54and0.74Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

IRF510

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

IRF510

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

IRF510

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

IRF510

iscN-ChannelMosfetTransistor

IRF510

RepetitiveAvalancheRated

IRF510

N-ChannelPowerMosfets

IRF510

SEMICONDUCTORS

IRF510

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

IRF510A

AdvancedPowerMOSFET

FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •175°COperatingTemperature •LowerLeakageCurrent:10μA(Max.)@VDS=100V •LowerRDS(ON):0.289Ω(Typ.)