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PLM2105DR

LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州仪器美国德州仪器公司

PLM2105DR

LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州仪器美国德州仪器公司

PLM2105DR

LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州仪器美国德州仪器公司

PLM2105DSGR

LM2105105-V,0.5-A/0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州仪器美国德州仪器公司

PM2105

1WATTRFICPOWERAMPLIFIER800TO2000MHZOPERATION

ETCList of Unclassifed Manufacturers

未分类制造商

PTFA2105

Verticallevelsensor

CELDUCcelduc Relais

凡纪继电器凡纪继电器(上海)有限公司

PV2105

Wide-Input,SynchronousBuckDigitalControllerwithAuto-Control&SMBus??PMBus??forUSB-PD

ROHMRohm

罗姆罗姆半导体集团

RF2105

HIGHPOWERLINEARUHFAMPLIFIER

ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa

RFMD

RF Micro Devices

RF2105L

HIGHPOWERLINEARUHFAMPLIFIER

ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa

RFMD

RF Micro Devices

RF2105LPCBA

HIGHPOWERLINEARUHFAMPLIFIER

ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa

RFMD

RF Micro Devices

RN2105

TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications Built-inbiasresistors Simplifiedcircuitdesign Fewerpartsandsimplifiedmanufacturingprocess ComplementarytoRN1101~RN1106

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

RN2105

SiliconPNPEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

RN2105

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications Built-inbiasresistors Simplifiedcircuitdesign Fewerpartsandsimplifiedmanufacturingprocess ComplementarytoRN1101~RN1106

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

RN2105ACT

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications •Extrasmallpackage(CST3)isapplicableforextrahighdensityfabrication. •Incorporatingabiasresistorintoatransistorreducespartscount.Reducingthepartscountenablethemanufactureofevermor

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

RN2105CT

SwitchingApplicationsInverterCircuitApplicationsInterfaceCircuitApplicationsDriverCircuitApplications

SwitchingApplications InverterCircuitApplications InterfaceCircuitApplications DriverCircuitApplications •Incorporatingabiasresistorintoatransistorreducespartscount.Reducingthepartscountenablethemanufactureofevermorecompactequipmentandsaveassemblycost

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

RN2105MFV

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications Ultra-smallpackage,suitedtoveryhighdensitymounting Incorporatingabiasresistorintothetransistorreducesthenumberofparts,soenablingthemanufactureofevermorecompactequipmentandlowering

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

RSZ-2105

1WattSMDMiniatureIsolatedSingleOutput

RECOM

Recom International Power

RSZ-2105HP

1WattSMDMiniatureIsolatedSingleOutput

RECOM

Recom International Power

S2105QA

21/32/43/60VOICEROM

Description TheMSS6605isasingle-chipCMOSVLSIROMthatcanmemorizevoiceupto60secondsusingMOSELqualifiedcodingmethod(MPCM)at5.8KHz. Threeaddressinginterfacesareprovided:CPUmode,KEYBOARDmodeandMATRIXmodeforversatileapplications.Thevoicecontentcanbestoredsep

MOSELMOSEL VETELIC INC.

茂矽台湾茂矽电子股份有限公司

S2105QE

21/32/43/60VOICEROM

Description TheMSS6605isasingle-chipCMOSVLSIROMthatcanmemorizevoiceupto60secondsusingMOSELqualifiedcodingmethod(MPCM)at5.8KHz. Threeaddressinginterfacesareprovided:CPUmode,KEYBOARDmodeandMATRIXmodeforversatileapplications.Thevoicecontentcanbestoredsep

MOSELMOSEL VETELIC INC.

茂矽台湾茂矽电子股份有限公司

供应商型号品牌批号封装库存备注价格
24+
3060
询价
MURATA
2016+
SMD
2486
只做原装,假一罚十,公司可开17%增值税发票!
询价
MURATA
999999
提供BOM表配单只做原装货值得信赖
询价
MURATA/村田
24+
2486
全新原装数量均有多电话咨询
询价
原装正品
17+
NA
66300
一级代理/全新原装现货/长期供应!
询价
DJD
2023+
DLW5A
48000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
MURATA
原厂封装
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
MURATA
1923+
原厂封装
35689
绝对进口原装现货库存特价销售
询价
MURATA
2023+
1812
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
MURATA/村田
23+
360000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多PLM2105DR供应商 更新时间2024-11-25 15:30:00