| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel E nhancement Mode Field Effect Transistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
Ultra low on-resistance Description Thesedevicesutilizethe7thgenerationofdesignrulesofST’sproprietarySTripFET™technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features •Ultralowon-resistance •100avalanchetested Applications •Switchin | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N - CHANNEL 30V - 0.019 ohm - 25A - TO-251/TO-252 STripFET POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearema | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET??POWER MOSFET DESCRIPTION ThisPowerMosfetseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersforTelecomandComputerapp | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL 100V - 0.030 ohm - 25A DPAK LOW GATE CHARGE STripFET??II POWER MOSFET DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomand | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel 100 V, 0.030 廓, 25 A DPAK STripFET??II Power MOSFET Description ThisPowerMOSFEThasbeendevelopedusingSTMicroelectronics’uniqueSTripFETprocess,whichisspecificallydesignedtominimizeinputcapacitanceandgatecharge.Thisrendersthedevicesuitableforuseasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersfor | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel Enhancement Mode Power MOSFET Features VDS=100V,ID=40A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
N-channel 100V - 0.030Ohm - 25A - DPAK Low gate charge STripFET II Power MOSFET DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomand | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=125mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel 30-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel 100-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel 100-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel 100-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Automotive-grade N-channel 200 V, 0.10 ??typ., 18 A STripFET??Power MOSFET in a DPAK package | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
详细参数
- 型号：
STD25N
- 制造商：
SAMHOP
- 制造商全称：
SAMHOP
- 功能描述：
N-Channel E nhancement Mode Field Effect Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-252 |
8795 |
询价 | |||
SAMHOP |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
ST |
1709+ |
TO-252/D- |
32500 |
普通 |
询价 | ||
ST/意法 |
21+ |
TO-252 |
30000 |
只做正品原装现货 |
询价 | ||
S |
23+ |
TO-251 |
10000 |
公司只做原装正品 |
询价 | ||
S |
22+ |
TO-251 |
6000 |
十年配单,只做原装 |
询价 | ||
SamHop |
23+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
ST |
SOT-252 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
S |
22+ |
TO-251 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
SAMHOP |
2024+ |
TO251 |
50000 |
原装现货 |
询价 |
相关规格书
更多- STD25N10F7
- STD25NE03L-1
- STD25NF10L
- STD25NF10LT4
- STD25NF20
- STD-2603AR
- STD260BLK
- STD260BLK-PK1000
- STD26P3LLH6
- STD27N3LH5
- STD280BLK
- STD280BLK-PK1000
- STD29NF03L
- STD29NF03LT4
- STD2HNK60Z-1
- STD2N50
- STD2N50T4
- STD2N80K5
- STD2NA40T4
- STD2NB25T4
- STD2NB40-1
- STD2NB50-1
- STD2NB60
- STD2NB60T4
- STD2NB80-1
- STD2NC40
- STD2NC45-1
- STD2NC45-1_09
- STD2NC50
- STD2NC50T4
- STD2NC60-1
- STD2NC70ZT4
- STD2NK60Z
- STD2NK70Z-1
- STD2NK90Z-1
- STD2NM60
- STD2NM60T4
- STD300BLK
- STD300BLK-PK1000
- STD3030NL
- STD3055L
- STD30NE06L
- STD30NE06T4
- STD30NF04LT
- STD30NF06LT4
相关库存
更多- STD25NE03L
- STD25NF10
- STD25NF10LA
- STD25NF10T4
- STD25P03LT4G
- STD-2607AR
- STD260BLK-PK10
- STD26NF10
- STD270BLK
- STD2805T4
- STD280BLK-PK10
- STD290BLK
- STD29NF03L-1
- STD2HNK60Z
- STD2LN60K3
- STD2N50-1
- STD2N62K3
- STD2N95K5
- STD2NB25-1
- STD2NB40
- STD2NB50
- STD2NB50T4
- STD2NB60-1
- STD2NB80
- STD2NB80T4
- STD2NC40-1
- STD2NC45-1_06
- STD2NC45T4
- STD2NC50-1
- STD2NC60
- STD2NC70Z-1
- STD2NK100Z
- STD2NK60Z-1
- STD2NK70ZT4
- STD2NK90ZT4
- STD2NM60-1
- STD3000B20
- STD300BLK-PK10
- STD302S
- STD3030NLS
- STD30NE06
- STD30NE06LT4
- STD30NF03LT4
- STD30NF06
- STD30NF06T4