1N5818-T-CUTTAPE数据手册批发供应威世科技-114ic电子网

首页 >1N5818-T-CUTTAPE>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
1N5818T-G	文件：77.12 Kbytes Page：3 Pages	SchottkyBarrierRectifiers Features -Epitaxialconstruction. -Lowforwardvoltagedrop. -Metal-Semiconductorjunctionwithguardring. -Highcurrentcapability. -Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications.	COMCHIPComchip Technology 典琦典琦科技股份有限公司	COMCHIP
1N5818TR	文件：88.36 Kbytes Page：5 Pages	SCHOTTKYRECTIFIER1.0Amp Description/Features The1N5818/1N5819axialleadedSchottkyrectifierhasbeenoptimizedforverylowforwardvoltagedrop,withmoderateleakage.Typicalapplicationsareinswitchingpowersupplies,converters,free-wheelingdiodes,andreversebatteryprotection. •Lowprofile,axialleaded	IRF International Rectifier	IRF
1N5818TR	文件：79.36 Kbytes Page：5 Pages	SchottkyRectifier,1.0A	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
1N5818W	文件：319.46 Kbytes Page：5 Pages	SCHOTTKYDIODESSURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS	AITSEMIAiT Semiconductor Inc. 創瑞科技AiT創瑞科技	AITSEMI
1N5818W	文件：383.39 Kbytes Page：3 Pages	SCHOTTKYBARRIERRECTIFIERS	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司	YFWDIODE
1N5818W	文件：287.13 Kbytes Page：5 Pages	SCHOTTKYBARRIERRECTIFIER	RECTRON Rectron Semiconductor	RECTRON
1N5818W	文件：277.45 Kbytes Page：5 Pages	SCHOTTKYBARRIERRECTIFIER	RECTRON Rectron Semiconductor	RECTRON
1N5818W	文件：470.76 Kbytes Page：2 Pages	1ASurfaceMountSchottkyBarrierDiode	BYTESONIC Bytesonic Electronics Co., Ltd.	BYTESONIC
1N5818W	文件：233.87 Kbytes Page：3 Pages	SchottkyDiodes ■Features ●Lowpowerloss,highefficiency ●Highcurrentcapability ●Lowforwardvoltagedrop ●HighSurgeCapability	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司	KEXIN
1N5818W	文件：123.88 Kbytes Page：3 Pages	SCHOTTKYBARRIERRECTIFIERS FEATURES •Metalsiliconjunction,majoritycarrierconduction •Guardingforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability •lowforwardvoltagedrop •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpola	SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司	SEMIPOWER
1N5818W	文件：75.75 Kbytes Page：3 Pages	SCHOTTKYBARRIERRECTIFIERS FEATURES •Metalsiliconjunction,majoritycarrierconduction •Guardingforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability •lowforwardvoltagedrop •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpol	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司	YFWDIODE
1N5818W	文件：471.87 Kbytes Page：3 Pages	SCHOTTKYBARRIERDIODE	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司	YFWDIODE
1N5818WB	文件：135.91 Kbytes Page：2 Pages	1ASURFACEMOUNTSCHOTTKYBARRIERDIODE 1ASURFACEMOUNTSCHOTTKYBARRIERDIODE Plasticsurfacemountedpackage;2leads	SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司	SEMTECH_ELEC
1N5818WB	文件：47.53 Kbytes Page：1 Pages	SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODES PRV:20-40Volts IO:1.0Ampere MECHANICALDATA: Case:SOD-123 Weight:0.01gram(approximately) 1N5817WBMarkingCode:A0 1N5818WBMarkingCode:ME *1N5819WBMarkingCode:SR	EIC EIC discrete Semiconductors	EIC
1N5818WB	文件：227.07 Kbytes Page：3 Pages	1ASurfaceMountSchottkyBarrierDiode 1ASurfaceMountSchottkyBarrierDiode Plasticsurfacemountedpackage;2leads	ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司	ZSELEC
1N5818WS	文件：603.17 Kbytes Page：2 Pages	SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •NegligibleReverseRecoveryTime •LowReverseCapacitance •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability	YIXINShenzhen Yixinwei Technology Co., Ltd. 壹芯微深圳市壹芯微科技有限公司	YIXIN
1N5818WS	文件：470.3 Kbytes Page：3 Pages	SCHOTTKYBARRIERDIODE FEATURES ♦LowForwardVoltageDrop ♦GuardRingConstructionforTransientProtection ♦NegligibleReverseRecoveryTime ♦LowCapacitance ♦LeadfreeincomplywithEURoHS2011/65/EUdirectives MECHANICALDATA ♦Case:SOD-323 ♦Terminals:SolderableperMIL-STD-750,Method2026 ♦Appro	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司	YFWDIODE
1N5818WS	文件：530.81 Kbytes Page：3 Pages	SchottkyBarrierRectifiers Features ●Metalsiliconjunction,majoritycarrierconduction ●Guardingforovervoltageprotection ●Lowpowerloss,highefficiency ●Highcurrentcapability ●Lowforwardvoltagedrop ●Highsurgecapability ●Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpola	PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司	PJSEMI
1N5818WS	文件：99.1 Kbytes Page：2 Pages	SchottkyBarrierDiodes Features ●Foruseinlowvoltage,highfrequencyinverters ●Freewheeling,andpolarityprotectionapplications.	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司	KEXIN
1N5818WS	文件：557.38 Kbytes Page：3 Pages	SCHOTTKYBARRIERRECTIFIERS FEATURES •Metalsiliconjunction,majoritycarrierconduction •Guardingforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability •Lowforwardvoltagedrop •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpola	FS First Silicon Co., Ltd	FS

12 >>>

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	1N5818-TP	MCC	24+	DO-41	7500		询价
深圳市博浩通科技有限公司	1N5818-TP	MCC	23+	DO-41	7750	全新原装优势	询价
上海金庆电子技术有限公司	1N5818-TP	MicroCommercialComponent	新		2623	全新原装货期两周	询价
上海市鑫鸿达电子	1N5818-TP	Micro Commercial Components	2022+		2619	全新原装货期两周	询价
深圳市艾宇欣科技有限公司	1N5818-TP	Micro	1942+	N/A	6914	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	1N5818-TP	MICRO	1809+	DO-41	6675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市弘为电子有限公司	1N5818-TP	MC	22+	NA	30000	原装现货假一罚十	询价
深圳市富芯乐电子科技有限公司	1N5818-TP	MCC	22+	NA	4991		询价
现代芯城（深圳）科技有限公司	1N5818-TP		24+	N/A	65000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市宏捷佳电子科技有限公司	1N5818-TP	Micro Commercial Co	24+	DO-41	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价

更多1N5818-T-CUTTAPE供应商更新时间2024-11-22 16:30:00

相关规格书

相关库存