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  • CHM6861JPT图
  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • CHM6861JPT
  • 数量78800 
  • 厂家CHENMKO-力勤 
  • 封装SOP-8.贴片 
  • 批号▉▉:2年内 
  • ▉▉¥10一一有问必回一一有长期订货一备货HK仓库
  • QQ:43871025QQ:43871025 复制
  • 131-4700-5145---Q-微-恭-候---有-问-秒-回 QQ:43871025
  • CHM6861JPT图
  • 深圳市创思克科技有限公司

     该会员已使用本站2年以上
  • CHM6861JPT
  • 数量6680 
  • 厂家VBSEMI/台湾微碧 
  • 封装SOP-8 
  • 批号20+ 
  • 全新原装挺实单欢迎来撩/可开票
  • QQ:1092793871QQ:1092793871 复制
  • -0755-88910020 QQ:1092793871

产品型号CHM6861JPT的Datasheet PDF文件预览

CHENMKO ENTERPRISE CO.,LTD  
CHM6861JPT  
SURFACE MOUNT  
P-Channel Enhancement Mode Field Effect Transistor  
VOLTAGE 60 Volts CURRENT 3.5 Ampere  
APPLICATION  
* Servo motor control.  
* Power MOSFET gate drivers.  
* Other switching applications.  
SO-8  
FEATURE  
* Small flat package. (SO-8 )  
(
)
4.06 0.160  
* Super high dense cell design for extremely low RDS(ON).  
(
)
3.70 0.146  
* High power and current handing capability.  
* Lead free product is acquired.  
8
5
(
)
.51 0.020  
1
4
(0.012)  
.10  
(
)
5.00 0.197  
CONSTRUCTION  
(
)
4.69 0.185  
( )BSC  
1.27 0.05  
* P-Channel Enhancement  
(0.069)  
1.75  
(
)
.25 0.010  
(
)
1.35 0.053  
(0.007)  
.17  
(
)
.25 0.010  
(0.002)  
.05  
(
)
6.20 0.244  
D
S
D
S
D
D
G
(
)
5.80 0.228  
8
1
5
4
CIRCUIT  
Dimensions in millimeters  
SO-8  
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
CHM6861JPT  
Units  
VDSS  
Drain-Source Voltage  
-60  
V
VGSS  
Gate-Source Voltage  
±20  
V
Maximum Drain Current - Continuous  
- Pulsed  
-3.5  
-15  
ID  
A
(Note 3)  
PD  
TJ  
2500  
mW  
°C  
Maximum Power Dissipation  
Operating Temperature Range  
-55 to 150  
-55 to 150  
Storage Temperature Range  
STG  
T
°C  
Note : 1. Surface Mounted on FR4 Board , t <=10sec  
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%  
3. Repetitive Rating , Pulse width linited by maximum junction temperature  
4. Guaranteed by design , not subject to production trsting  
Thermal characteristics  
(Note 1)  
R
θJA  
Thermal Resistance, Junction-to-Ambient  
50  
°C/W  
2006-02  
RATING CHARACTERISTIC CURVES ( CHM6861JPT )  
Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
BVDSS  
Drain-Source Breakdown Voltage  
VGS  
V
= 0 V, I  
D
= -250 µA  
-60  
DSS  
I
Zero Gate Voltage Drain Current  
VDS = -60 V, VGS = 0 V  
VGS = 20V,VDS = 0 V  
VGS = -20V, VDS = 0 V  
-1  
µ
A
GSSF  
I
+100  
-100  
n
n
Gate-Body Leakage  
Gate-Body Leakage  
A
A
GSSR  
I
(Note 2)  
ON CHARACTERISTICS  
VGS(th)  
-3  
V
m
S
Gate Threshold Voltage  
VDS = VGS, ID = -250 µA  
-1  
99  
125  
169  
V
V
GS=-10V, I  
D
=-3.5A  
=-3.1A  
RDS(ON)  
Static Drain-Source On-Resistance  
Forward Transconductance  
GS=-4.5V, I  
D
130  
7
gFS  
VDS = -10V, ID = -3.5A  
Dynamic Characteristics  
Ciss  
885  
Input Capacitance  
VDS = -30V, VGS = 0V,  
f = 1.0 MHz  
Coss  
Crss  
Output Capacitance  
85  
80  
pF  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS (Note 4)  
11  
14  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Qg  
V
V
DS=-30V, I  
GS=-10V  
D
=-3.5A  
nC  
nS  
Qgs  
2.4  
1.6  
gd  
Q
ton  
tr  
Turn-On Time  
Rise Time  
12  
4
25  
15  
80  
25  
VDD  
-30V  
=
,
D
I = -1A  
GS  
V
= -10 V  
toff  
tf  
Turn-Off Time  
Fall Time  
38  
12  
GEN= 6  
R
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
S
(Note 1)  
I
-3.5  
-1.2  
A
Drain-Source Diode Forward Current  
Drain-Source Diode Forward Voltage  
,
S
I = -1.3A  
GS  
(Note 2)  
VSD  
V
V
= 0 V  
配单直通车
CHM8030LANGP产品参数
型号:CHM8030LANGP
生命周期:Contact Manufacturer
包装说明:,
Reach Compliance Code:unknown
风险等级:5.61
Base Number Matches:1
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