BCV29H6327原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

BCV29, BCV49

NPN Silicon Darlington Transistors

1

• For general AF applications

• High collector current

2

3

2

• High current gain

• Complementary types: BCV28, BCV48 (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type

BCV29

BCV49

Marking

EF

EG

Pin Configuration

Package

SOT89

1=B

2=C

3=E

Maximum Ratings

Parameter

Symbol

Value

Unit

V

Collector-emitter voltage

BCV29

BCV49

V

CEO

CBO

EBO

30

60

Collector-base voltage

BCV29

BCV49

40

80

10

500

800

100

200

1

Emitter-base voltage

Collector current

mA

I

C

Peak collector current, t ≤ 10 ms

I

CM

I

B

p

Base current

Peak base current

Total power dissipation-

I

BM

W

P

tot

T ≤ 130 °C

S

150

°C

Junction temperature

Storage temperature

T

j

T

-65 ... 150

stg

2011-10-05

1

BCV29, BCV49

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 20

Unit

K/W

1)

R

thJS

1

For calculation of R

please refer to Application Note AN077 (Thermal Resistance Calculation)

thJA

Electrical Characteristics at T = 25°C, unless otherwise specified

A

Parameter

Symbol

Values

typ. max.

Unit

min.

DC Characteristics

Collector-emitter breakdown voltage

V

(BR)CEO

(BR)CBO

(BR)EBO

I = 10 mA, I = 0 , BCV29

30

60

-

C

B

I = 10 mA, I = 0 , BCV49

C

B

Collector-base breakdown voltage

I = 100 µA, I = 0 , BCV29

40

80

-

C

E

I = 100 µA, I = 0 , BCV49

C

E

Emitter-base breakdown voltage

I = 10 µA, I = 0

10

-

E

C

Collector-base cutoff current

I

µA

CBO

V

= 30 V, I = 0 , BCV29

-

0.1

10

CB

E

= 60 V, I = 0 , BCV49

E

= 30 V, I = 0 , T = 150 °C, BCV29

E

A

= 60 V, I = 0 , T = 150 °C, BCV49

10

E

A

-

100 nA

Emitter-base cutoff current

I

EBO

V

= 4 V, I = 0

EB

C

1)

-

DC current gain

h

FE

I = 100 µA, V = 1 V, BCV29

4000

2000

10000

4000

20000

10000

4000

-

C

CE

I = 100 µA, V = 1 V, BCV49

C

CE

I = 10 mA, V = 5 V, BCV29

C

CE

I = 10 mA, V = 5 V, BCV49

C

CE

I = 100 mA, V = 5 V, BCV29

C

CE

I = 100 mA, V = 5 V, BCV49

C

CE

I = 0.5 A, V = 5 V, BCV29

C

CE

I = 0.5 A, V = 5 V, BCV49

2000

C

CE

1)

Collector-emitter saturation voltage

I = 100 mA, I = 0.1 mA

V

-

1

V

CEsat

C

B

1)

Base emitter saturation voltage

I = 100 mA, I = 0.1 mA

V

-

1.5

BEsat

C

B

2011-10-05

2

BCV29, BCV49

1

Pulse test: t < 300µs; D < 2%

Electrical Characteristics at T = 25°C, unless otherwise specified

A

Parameter

Symbol

Values

typ. max.

Unit

min.

AC Characteristics

-

150

3

-

MHz

pF

Transition frequency

f

T

I = 50 mA, V = 5 V, f = 100 MHz

C

CE

Collector-base capacitance

= 10 V, f = 1 MHz

C

cb

V

CB

2011-10-05

3

BCV29, BCV49

DC current gain h = ƒ(I )

Collector-emitter saturation voltage

I = ƒ(V ), h = 1000

FE

C

V

= 5 V

CE

C

CEsat

FE

BCV 29/49

EHP00325

BCV 29/49

EHP00322

10⁶

10³

mA

5

h_FE

Ι _C

150 ˚C

25 ˚C

-50 ˚C

125 ˚C

25 ˚C

10⁵

5

10²

5

-55 ˚C

10⁴

5

10¹

5

10³

10⁰

10^-1

10⁰

10¹

10²mA 10³

0

0.5

1.0

1.5

V

Ι _C

V_CEsat

Base-emitter saturation voltage

Collector cutoff current I

= ƒ(T )

CBO A

I = ƒ(V

), h = 1000

V

= V

C

BEsat

FE

CB

CEmax

BCV 29/49

EHP00318

BCV 29/49

EHP00323

10⁴

nA

10³

mA

Ι _CBO

Ι _C

max

150 ˚C

25 ˚C

10³

10²

10¹

10⁰

-50 ˚C

10²

5

typ

10¹

5

10⁰

0

1.0

2.0

3.0

V

0

50

100

150

˚C

T_A

V_BEsat

2011-10-05

4

BCV29, BCV49

Transition frequency f = ƒ(I )

Collector-base capacitance C = ƒ(V )

cb CB

T

C

V

= 5 V

Emitter-base capacitance C = ƒ(V )

CE

eb EB

BCV 29/49

EHP00321

10³

MHz

19

pF

f _T

15

13

11

9

10²

CEB

5

7

5

CCB

3

10¹

1

10⁰

10¹

10²

mA

Ι _C

10³

V

0

4

8

12

16

22

V

/V

CB EB

Total power dissipation P = ƒ(T )

Permissible Pulse Load

tot

S

P

/P

= ƒ(t )

totmax totDC

p

BCV 29/49

EHP00319

1200

5

P_totmax

P_totDC

t _p

mW

t _p

T

D

=

T

10²

5

D

0

800

600

400

200

0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

10¹

5

10⁰

10^-610^-5

10^-410^-3

10^-2

s

10⁰

0

15 30 45 60 75 90 105 120

150

°C

S

T

t _p

2011-10-05

5

Package SOT89

BCV29, BCV49

Package Outline

0.1

4.5

B

0.1

1.5

45˚

0.25

0.2 MAX.¹⁾

0.05

0.2

1.6

0.15

1

2

3

1.5

0.1

0.35

+0.2

-0.1

0.45

M

0.15

B

x3

3

0.2

B

1) Ejector pin markings possible

Foot Print

2.0

0.8

0.7

Marking Layout (Example)

BAW78D

Type code

Pin 1

2005, June

Date code (YM)

Manufacturer

Standard Packing

Reel ø180 mm = 1.000 Pieces/Reel

Reel ø330 mm = 4.000 Pieces/Reel

0.2

8

Pin 1

1.6

4.3

2011-10-05

6

BCV29, BCV49

Edition 2009-11-16

Published by

Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee

of conditions or characteristics. With respect to any examples or hints given herein,

any typical values stated herein and/or any information regarding the application of

the device, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation, warranties of non-infringement of

intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,

please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon

Technologies Office.

Infineon Technologies components may be used in life-support devices or systems

only with the express written approval of Infineon Technologies, if a failure of such

components can reasonably be expected to cause the failure of that life-support

device or system or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body or

to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be

endangered.

2011-10-05

7

型号:	BCV29H6327XTSA1
是否Rohs认证：	符合
生命周期：	End Of Life
包装说明：	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
Factory Lead Time：	6 weeks
风险等级：	5.7
外壳连接：	COLLECTOR
最大集电极电流 (IC)：	0.5 A
集电极-发射极最大电压：	30 V
配置：	DARLINGTON
最小直流电流增益 (hFE)：	4000
JESD-30 代码：	R-PSSO-F3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN
表面贴装：	YES
端子形式：	FLAT
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	150 MHz
Base Number Matches：	1

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