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产品型号BCV46/T1的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS  
DATA SHEET  
BCV26; BCV46  
PNP Darlington transistors  
Product specification  
2004 Jan 13  
Supersedes data of 1999 Apr 08  
Philips Semiconductors  
Product specification  
PNP Darlington transistors  
BCV26; BCV46  
FEATURES  
PINNING  
PIN  
High current (max. 500 mA)  
Low voltage (max. 60 V)  
DESCRIPTION  
1
2
3
base  
Very high DC current gain (min. 10000).  
emitter  
collector  
APPLICATIONS  
Where very high amplification is required.  
DESCRIPTION  
handbook, halfpage  
PNP Darlington transistor in a SOT23 plastic package.  
NPN complements: BCV27 and BCV47.  
3
1
3
TR1  
TR2  
MARKING  
1
2
2
TYPE NUMBER  
BCV26  
MARKING CODE(1)  
MAM299  
FD*  
FE*  
Top view  
BCV46  
Note  
1. * = p : Made in Hong Kong.  
* = t : Made in Malaysia.  
* = W : Made in China.  
Fig.1 Simplified outline (SOT23) and symbol.  
ORDERING INFORMATION  
TYPE  
PACKAGE  
DESCRIPTION  
plastic surface mounted package; 3 leads  
NUMBER  
NAME  
VERSION  
BCV26  
BCV46  
SOT23  
2004 Jan 13  
2
Philips Semiconductors  
Product specification  
PNP Darlington transistors  
BCV26; BCV46  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
VCBO  
collector-base voltage  
BCV26  
40  
V
V
BCV46  
80  
VCES  
collector-emitter voltage  
BCV26  
VBE = 0  
30  
V
V
V
BCV46  
60  
VEBO  
IC  
ICM  
IB  
emitter-base voltage  
collector current (DC)  
peak collector current  
base current (DC)  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
open collector  
10  
500  
800  
100  
250  
mA  
mA  
mA  
mW  
°C  
Ptot  
Tstg  
Tj  
Tamb 25 °C; note 1  
65  
+150  
150  
°C  
Tamb  
65  
+150  
°C  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth(j-a)  
thermal resistance from junction to ambient note 1  
500  
K/W  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
2004 Jan 13  
3
Philips Semiconductors  
Product specification  
PNP Darlington transistors  
BCV26; BCV46  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
ICBO  
PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
collector cut-off current  
BCV26  
IE = 0; VCB = 30 V  
100 nA  
100 nA  
100 nA  
BCV46  
IE = 0; VCB = 60 V  
IEBO  
hFE  
emitter cut-off current  
DC current gain  
BCV26  
IC = 0; VEB = 10 V  
IC = 1 mA; VCE = 5 V; (see Fig.2)  
4000  
2000  
BCV46  
DC current gain  
BCV26  
IC = 10 mA; VCE = 5 V; (see Fig.2)  
IC = 100 mA; VCE = 5 V; (see Fig.2)  
IC = 100 mA; IB = 0.1 mA  
10000  
4000  
BCV46  
DC current gain  
BCV26  
20000  
10000  
BCV46  
VCEsat  
collector-emitter saturation  
voltage  
1  
V
VBEsat  
VBEon  
fT  
base-emitter saturation voltage  
base-emitter on-state voltage  
transition frequency  
IC = 100 mA; IB = 0.1 mA  
IC = 10 mA; VCE = 5 V  
1.5  
1.4  
V
V
IC = 30 mA; VCE = 5 V; f = 100 MHz −  
220  
MHz  
MGD836  
100000  
h
FE  
80000  
60000  
40000  
20000  
0
1  
2
3
10  
10  
10  
I
(mA)  
C
VCE = 2 V.  
Fig.2 DC current gain; typical values.  
4
2004 Jan 13  
Philips Semiconductors  
Product specification  
PNP Darlington transistors  
BCV26; BCV46  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M  
B
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
97-02-28  
99-09-13  
SOT23  
TO-236AB  
2004 Jan 13  
5
Philips Semiconductors  
Product specification  
PNP Darlington transistors  
BCV26; BCV46  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2004 Jan 13  
6
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2004  
SCA76  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/05/pp7  
Date of release: 2004 Jan 13  
Document order number: 9397 750 12401  
配单直通车
BCV46/T1产品参数
型号:BCV46/T1
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Obsolete
IHS 制造商:NXP SEMICONDUCTORS
零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.21.00.75
风险等级:5.14
最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:60 V
配置:DARLINGTON
最小直流电流增益 (hFE):10000
JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3
JESD-609代码:e3
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性/信道类型:PNP
认证状态:Not Qualified
表面贴装:YES
端子面层:Tin (Sn)
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER
晶体管元件材料:SILICON
标称过渡频率 (fT):220 MHz
Base Number Matches:1
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