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  • BCW70.215图
  • 深圳市一线半导体有限公司

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  • BCW70.215
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产品型号BCW70/E8的Datasheet PDF文件预览

BCW69 and BCW70  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Small Signal Transistor (PNP)  
TO-236AB (SOT-23)  
.122 (3.1)  
.110 (2.8)  
.016 (0.4)  
Top View  
3
Mounting Pad Layout  
0.031 (0.8)  
Pin Configuration  
1 = Base 2 = Emitter  
3 = Collector  
1
2
0.035 (0.9)  
0.079 (2.0)  
.037(0.95)  
.037(0.95)  
0.037 (0.95)  
0.037 (0.95)  
.102 (2.6)  
.094 (2.4)  
.016 (0.4) .016 (0.4)  
Dimensions in inches and (millimeters)  
Mechanical Data  
Features  
Case: SOT-23 Plastic Package  
Weight: approx. 0.008g  
Marking Code: BCW69 = H1  
BCW70 = H2  
• PNP Silicon Epitaxial Planar Transistors  
• Suited for low level, general purpose applications.  
• Low current, low voltage.  
• As complementary types, BCW71 and BCW72  
NPN transistors are recommended.  
Packaging Codes/Options:  
E8/10K per 13reel (8mm tape), 30K/box  
E9/3K per 7reel (8mm tape), 30K/box  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
V
45  
V
5.0  
V
Collector Current  
100  
mA  
mA  
mA  
mW  
°C/W  
°C  
Peak Collector Current  
Peak Base Current  
ICM  
IBM  
Ptot  
200  
200  
Power Dissipation  
250  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
RΘJA  
Tj  
500(1)  
150  
Storage Temperature Range  
Note: (1) Mounted on FR-4 printed-circuit board.  
TSTG  
65 to +150  
°C  
Document Number 88174  
09-May-02  
www.vishay.com  
1
BCW69 and BCW70  
Vishay Semiconductors  
formerly General Semiconductor  
Electrical Characteristics(TJ = 25°C unless otherwise noted)  
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
BCW69  
BCW70  
BCW69  
BCW70  
VCE = 5 V, IC = 10 µA  
120  
215  
90  
150  
260  
500  
DC Current Gain  
hFE  
VCE = 5 V, IC = 2 mA  
I
C = 10 mA, IB = 0.5 mA  
80  
150  
300  
Collector-Emitter Saturation Voltage  
VCEsat  
mV  
mV  
IC = 50 mA, IB = 2.5 mA  
I
C = 10 mA, IB = 0.5 mA  
720  
810  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
VBEsat  
VBE  
IC = 50 mA, IB = 2.5 mA  
VCE = 5 V, IC = 2 mA  
VCB = 20 V, VEB = 0  
600  
750  
100  
mV  
nA  
Collector Cut-off Current  
ICBO  
VCB = 20 V, VEB = 0,  
TA = 100°C  
10  
µA  
VCE = 5 V, IC = 10 mA  
Gain-Bandwidth Product  
fT  
100  
MHz  
pF  
f = 100 MHz  
Collector-Base Capacitance  
CCBO VCB = 10 V, f = 1 MHz, IE = 0  
4.5  
VCE = 5 V, IC = 200 µA,  
Noise Figure  
F
RS = 2 k, f = 100 kHz,  
2
6
dB  
B = 200 Hz  
www.vishay.com  
2
Document Number 88174  
09-May-02  
配单直通车
BCW70/E8产品参数
型号:BCW70/E8
是否Rohs认证: 符合
生命周期:Obsolete
包装说明:,
Reach Compliance Code:compliant
风险等级:5.82
Is Samacsys:N
最大集电极电流 (IC):0.1 A
配置:Single
JESD-609代码:e3
最高工作温度:150 °C
极性/信道类型:PNP
最大功率耗散 (Abs):0.25 W
子类别:Other Transistors
表面贴装:YES
端子面层:Matte Tin (Sn)
标称过渡频率 (fT):100 MHz
Base Number Matches:1
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