BCR198E6433应用文章市场行情现货热卖使用介绍供应商报价-中国IC网-芯三七

BCR198...

PNP Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,

driver circuit

• Built in bias resistor (R1 = 47 kΩ , R2 = 47 kΩ )

• BCR198S: Two internally isolated

transistors with good matching

in one multichip package

• BCR198S: For orientation in reel see

package information below

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BCR198

BCR198S

BCR198W

C

C1

6

B2

5

E2

4

3

R₂

R₁

TR2

TR1

R₁

R₂

1

2

3

1

2

E1

B1

C2

B

E

EHA07173

EHA07183

Type

BCR198

BCR198S

BCR198W

Marking

Pin Configuration

1=B 2=E 3=C

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Package

SOT23

WRs

-

1=B 2=E 3=C

-

SOT323

2011-08-30

1

BCR198...

Maximum Ratings

Parameter

Symbol

Value

50

Unit

V

Collector-emitter voltage

Collector-base voltage

Input forward voltage

Input reverse voltage

Collector current

V

CEO

CBO

i(fwd)

i(rev)

80

10

100

mA

I

C

mW

Total power dissipation-

P

tot

BCR198, T ≤ 102°C

200

250

S

BCR198S, T ≤ 115°C

S

BCR198W, T ≤ 124°C

S

150

°C

Junction temperature

Storage temperature

T

j

T

-65 ... 150

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

Unit

K/W

1)

R

thJS

BCR198

BCR198S

BCR198W

≤ 240

≤ 140

≤ 105

1

For calculation of R

please refer to Application Note AN077 (Thermal Resistance Calculation)

thJA

2011-08-30

2

BCR198...

Electrical Characteristics at T = 25°C, unless otherwise specified

A

Parameter

Symbol

Values

typ. max.

Unit

min.

DC Characteristics

Collector-emitter breakdown voltage

50

-

V

(BR)CEO

I = 100 µA, I = 0

C

B

Collector-base breakdown voltage

I = 10 µA, I = 0

50

-

(BR)CBO

C

E

Collector-base cutoff current

= 40 V, I = 0

I

100 nA

164 µA

CBO

V

CB

E

-

Emitter-base cutoff current

I

EBO

V

= 10 V, I = 0

EB

C

1)

70

-

DC current gain

h

FE

I = 5 mA, V = 5 V

C

CE

1)

Collector-emitter saturation voltage

I = 10 mA, I = 0.5 mA

V

-

0.8

1

-

0.3

1.5

3

V

CEsat

i(off)

C

B

Input off voltage

I = 100 µA, V = 5 V

V

C

CE

Input on voltage

I = 2 mA, V = 0.3 V

i(on)

C

CE

Input resistor

Resistor ratio

R

R /R

32

0.9

47

1

62

1.1

kΩ

-

1

2

AC Characteristics

Transition frequency

-

190

3

-

MHz

pF

f

T

I = 10 mA, V = 5 V, f = 100 MHz

C

CE

Collector-base capacitance

= 10 V, f = 1 MHz

C

cb

V

CB

¹Pulse test: t < 300µs; D < 2%

2011-08-30

3

BCR198...

DC current gain h = ƒ(I )

Collector-emitter saturation voltage

FE

C

V

= 5 V (common emitter configuration)

V

= ƒ(I ), h = 20

CE

CEsat

C

FE

10 ³

0.5

V

0.4

0.35

0.3

10 ²

-40 °C

-25 °C

25 °C

85 °C

125 °C

0.25

0.2

10 ¹

-40 °C

0.15

0.1

-25 °C

25 °C

85 °C

125 °C

0.05

0

10 ⁰

10 ^-4

10 ^-3

10 ^-2

10 ^-1

10 ^-3

10 ^-2

10 ^-1

A

I

C

Input on Voltage Vi

= ƒ(I )

Input off voltage V

= ƒ(I )

i(off) C

(on)

C

V

= 0.3V (common emitter configuration)

V

= 5V (common emitter configuration)

CE

10 ¹

10 ²

V

-40 °C

-25 °C

25 °C

85 °C

V

125 °C

-40 °C

-25 °C

10 ¹

25 °C

85 °C

125 °C

10 ⁰

10 ^-1

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ^-1

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ^-1

A

I

C

2011-08-30

4

BCR198...

Total power dissipation P = ƒ(T )

tot S

tot

S

BCR198

BCR198S

300

mW

300

mW

250

225

200

175

150

125

100

75

250

225

200

175

150

125

100

75

50

25

0

°C

15 30 45 60 75 90 105 120

150

15 30 45 60 75 90 105 120

150

T

S

Total power dissipation P = ƒ(T )

Permissible Pulse Load R

= ƒ(t )

tot

S

thJS

p

BCR198W

BCR198

10 ³

K/W

300

mW

250

225

200

175

150

125

100

75

10 ²

10 ¹

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

10 ⁰

50

25

10 ^-1

0

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

°C

s

0

15 30 45 60 75 90 105 120

150

T

t

p

S

2011-08-30

5

BCR198...

Permissible Pulse Load

/P = ƒ(t )

Permissible Puls Load R

BCR198S

= ƒ (t )

thJS

p

P

totmax totDC

p

BCR198

10 ³

K/W

10 ³

-

10 ²

10 ¹

10 ⁰

10 ^-1

D = 0

0.005

0.01

0.02

0.05

0.1

10 ²

0.5

0.2

0.5

0.1

10 ¹

0.05

0.02

0.01

0.005

D = 0

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

s

t

p

Permissible Pulse Load

/P = ƒ(t )

Permissible Puls Load R

BCR198W

= ƒ (t )

thJS

p

P

totmax totDC

p

BCR198S

10 ³

K/W

10 ³

-

10 ²

10 ¹

10 ⁰

10 ^-1

D = 0

0.005

0.01

0.02

0.05

0.1

10 ²

0.5

0.2

0.5

0.1

10 ¹

0.05

0.02

0.01

0.005

D = 0

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

s

t

p

2011-08-30

6

BCR198...

Permissible Pulse Load

/P = ƒ(t )

P

totmax totDC

p

BCR198W

10 ³

-

D = 0

0.005

0.01

0.02

0.05

0.1

10 ²

0.2

0.5

10 ¹

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

s

t

p

2011-08-30

7

Package SOT23

BCR198...

Package Outline

0.1

1

0.1 MAX.

0.1

2.9

B

3

1

2

1)

+0.1

0.4

A

-0.05

0.08...0.15

0...8˚

C

0.95

1.9

0.25 B C

1) Lead width can be 0.6 max. in dambar area

M

0.2

A

Foot Print

0.8

1.2

Marking Layout (Example)

Manufacturer

2005, June

Date code (YM)

EH

s

Pin 1

BCW66

Type code

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

4

0.2

0.9

1.15

3.15

Pin 1

2011-08-30

8

Package SOT323

BCR198...

Package Outline

0.1

0.9

0.2

2

0.1 MAX.

0.1

+0.1

3x

0.3

-0.05

M

0.1

A

3

1

2

+0.1

0.15

-0.05

0.65 0.65

M

0.2

A

Foot Print

0.6

0.65

Marking Layout (Example)

Manufacturer

2005, June

Date code (YM)

BCR108W

Type code

Pin 1

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

0.2

4

Pin 1

2.15

1.1

2011-08-30

9

Package SOT363

BCR198...

Package Outline

0.2

2

0.1

0.9

+0.1

-0.05

6x

0.2

0.1 MAX.

0.1

M

0.1

A

6

1

5

4

3

2

Pin 1

marking

+0.1

0.15

-0.05

0.65 0.65

M

0.2

A

Foot Print

0.3

0.65

Marking Layout (Example)

Small variations in positioning of

Date code, Type code and Manufacture are possible.

Manufacturer

2005, June

Date code (Year/Month)

Pin 1 marking

Laser marking

BCR108S

Type code

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

For symmetric types no defined Pin 1 orientation in reel.

4

0.2

1.1

2.15

Pin 1

marking

2011-08-30

10

BCR198...

Edition 2009-11-16

Published by

Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee

of conditions or characteristics. With respect to any examples or hints given herein,

any typical values stated herein and/or any information regarding the application of

the device, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation, warranties of non-infringement of

intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,

please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon

Technologies Office.

Infineon Technologies components may be used in life-support devices or systems

only with the express written approval of Infineon Technologies, if a failure of such

components can reasonably be expected to cause the failure of that life-support

device or system or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body or

to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be

endangered.

2011-08-30

11

型号:	BCR198E6433
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	End Of Life
IHS 制造商：	INFINEON TECHNOLOGIES AG
包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.46
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：	0.07 A
集电极-发射极最大电压：	50 V
配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	70
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.2 W
认证状态：	Not Qualified
子类别：	BIP General Purpose Small Signal
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	190 MHz
Base Number Matches：	1

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