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    产品型号BCR555E6327HTSA1的Datasheet PDF文件预览

    BCR555  
    PNP Silicon Digital Transistor  
    • Built in bias resistor (R = 2.2 kΩ, R = 10 kΩ)  
    • Pb-free (RoHS compliant) package  
    • Qualified according AEC Q101  
    1
    2
    2
    1
    3
    C
    3
    R1  
    R2  
    1
    2
    B
    E
    EHA07183  
    Type  
    BCR555  
    Marking  
    XDs  
    Pin Configuration  
    Package  
    SOT23  
    1=B  
    2=E  
    3=C  
    Maximum Ratings  
    Parameter  
    Symbol  
    Value  
    Unit  
    50  
    50  
    V
    Collector-emitter voltage  
    Collector-base voltage  
    Input forward voltage  
    Input reverse voltage  
    Collector current  
    V
    V
    V
    V
    CEO  
    CBO  
    i(fwd)  
    i(rev)  
    20  
    5
    500  
    330  
    mA  
    mW  
    I
    C
    Total power dissipation-  
    P
    tot  
    T ≤ 79 °C  
    S
    150  
    °C  
    Junction temperature  
    Storage temperature  
    T
    j
    T
    -65 ... 150  
    stg  
    Thermal Resistance  
    Parameter  
    Junction - soldering point  
    Symbol  
    Value  
    ≤ 215  
    Unit  
    K/W  
    1)  
    R
    thJS  
    1
    For calculation of R  
    please refer to Application Note AN077 (Thermal Resistance Calculation)  
    thJA  
    2011-07-28  
    1
    BCR555  
    Electrical Characteristics at T = 25°C, unless otherwise specified  
    A
    Parameter  
    Symbol  
    Values  
    typ. max.  
    Unit  
    min.  
    DC Characteristics  
    Collector-emitter breakdown voltage  
    50  
    -
    -
    -
    V
    V
    V
    (BR)CEO  
    I = 100 µA, I = 0  
    C
    B
    Collector-base breakdown voltage  
    I = 10 µA, I = 0  
    50  
    -
    -
    -
    -
    -
    (BR)CBO  
    C
    E
    Collector-base cutoff current  
    = 50 V, I = 0  
    I
    100 nA  
    0.65 mA  
    CBO  
    V
    CB  
    E
    -
    Emitter-base cutoff current  
    = 5 V, I = 0  
    I
    EBO  
    V
    EB  
    C
    70  
    -
    -
    DC current gain-  
    I = 50 mA, V = 5 V  
    h
    FE  
    C
    CE  
    1)  
    Collector-emitter saturation voltage  
    I = 50 mA, I = 2.5 mA  
    V
    -
    -
    -
    -
    0.3  
    1
    V
    CEsat  
    i(off)  
    C
    B
    Input off voltage  
    I = 100 µA, V = 5 V  
    V
    V
    0.4  
    0.5  
    C
    CE  
    Input on voltage  
    1.4  
    i(on)  
    I = 10 mA, V = 0.3 V  
    C
    CE  
    Input resistor  
    R
    1.5  
    2.2  
    2.9 kΩ  
    1
    Resistor ratio  
    R /R  
    0.19  
    0.22  
    0.24 -  
    1
    2
    AC Characteristics  
    Transition frequency  
    -
    150  
    -
    MHz  
    f
    T
    I = 50 mA, V = 5 V, f = 100 MHz  
    C
    CE  
    1
    Pulse test: t < 300µs; D < 2%  
    2011-07-28  
    2
    BCR555  
    DC current gain h = ƒ(I )  
    Collector-emitter saturation voltage  
    FE  
    C
    V
    = 5 V (common emitter configuration)  
    V
    = ƒ(I ), I /I = 20  
    CE  
    CEsat C C B  
    10 3  
    0.55  
    V
    0.45  
    0.4  
    10 2  
    -40 °C  
    0.35  
    0.3  
    -25 °C  
    25 °C  
    85 °C  
    125 °C  
    10 1  
    0.25  
    0.2  
    -40 °C  
    -25 °C  
    25 °C  
    10 0  
    0.15  
    0.1  
    85 °C  
    125 °C  
    0.05  
    0
    10 -1  
    10 -4  
    10 -3  
    10 -2  
    10 -1  
    10 0  
    10 -3  
    10 -2  
    10 -1  
    10 0  
    A
    A
    I
    I
    C
    C
    Input on Voltage Vi  
    = ƒ(I )  
    Input off voltage V  
    = ƒ(I )  
    i(off) C  
    (on)  
    C
    V
    = 0.3V (common emitter configuration)  
    V
    = 5V (common emitter configuration)  
    CE  
    CE  
    10 1  
    10 2  
    V
    -40 °C  
    -25 °C  
    V
    25 °C  
    85 °C  
    125 °C  
    -40 °C  
    10 1  
    -25 °C  
    25 °C  
    85 °C  
    125 °C  
    10 0  
    10 0  
    10 -1  
    10 -1  
    10 -4  
    10 -3  
    10 -2  
    10 -1  
    10 0  
    10 -5  
    10 -4  
    10 -3  
    10 -2  
    A
    A
    I
    I
    C
    C
    2011-07-28  
    3
    BCR555  
    Total power dissipation P = ƒ(T )  
    Permissible Pulse Load R  
    = ƒ(t )  
    tot  
    S
    thJS  
    p
    10 3  
    K/W  
    400  
    mW  
    10 2  
    300  
    250  
    200  
    150  
    100  
    50  
    10 1  
    0.5  
    0.2  
    0.1  
    0.05  
    0.02  
    0.01  
    0.005  
    D = 0  
    10 0  
    10 -1  
    0
    10 -6  
    10 -5  
    10 -4  
    10 -3  
    10 -2  
    10 0  
    °C  
    s
    0
    20  
    40  
    60  
    80  
    100 120  
    150  
    T
    t
    p
    S
    Permissible Pulse Load  
    P
    /P  
    = ƒ(t )  
    totmax totDC  
    p
    10 4  
    -
    10 3  
    10 2  
    10 1  
    10 0  
    D = 0  
    0.005  
    0.01  
    0.02  
    0.05  
    0.1  
    0.2  
    0.5  
    10 -6  
    10 -5  
    10 -4  
    10 -3  
    10 -2  
    10 0  
    s
    t
    p
    2011-07-28  
    4
    Package SOT23  
    BCR555  
    Package Outline  
    0.1  
    1
    0.1 MAX.  
    0.1  
    2.9  
    B
    3
    1
    2
    1)  
    +0.1  
    0.4  
    A
    -0.05  
    0.08...0.15  
    0...8˚  
    C
    0.95  
    1.9  
    0.25 B C  
    1) Lead width can be 0.6 max. in dambar area  
    M
    M
    0.2  
    A
    Foot Print  
    0.8  
    0.8  
    1.2  
    Marking Layout (Example)  
    Manufacturer  
    2005, June  
    Date code (YM)  
    EH  
    s
    Pin 1  
    BCW66  
    Type code  
    Standard Packing  
    Reel ø180 mm = 3.000 Pieces/Reel  
    Reel ø330 mm = 10.000 Pieces/Reel  
    4
    0.2  
    0.9  
    1.15  
    3.15  
    Pin 1  
    2011-07-28  
    5
    BCR555  
    Edition 2009-11-16  
    Published by  
    Infineon Technologies AG  
    81726 Munich, Germany  
    2009 Infineon Technologies AG  
    All Rights Reserved.  
    Legal Disclaimer  
    The information given in this document shall in no event be regarded as a guarantee  
    of conditions or characteristics. With respect to any examples or hints given herein,  
    any typical values stated herein and/or any information regarding the application of  
    the device, Infineon Technologies hereby disclaims any and all warranties and  
    liabilities of any kind, including without limitation, warranties of non-infringement of  
    intellectual property rights of any third party.  
    Information  
    For further information on technology, delivery terms and conditions and prices,  
    please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
    Warnings  
    Due to technical requirements, components may contain dangerous substances.  
    For information on the types in question, please contact the nearest Infineon  
    Technologies Office.  
    Infineon Technologies components may be used in life-support devices or systems  
    only with the express written approval of Infineon Technologies, if a failure of such  
    components can reasonably be expected to cause the failure of that life-support  
    device or system or to affect the safety or effectiveness of that device or system.  
    Life support devices or systems are intended to be implanted in the human body or  
    to support and/or maintain and sustain and/or protect human life. If they fail, it is  
    reasonable to assume that the health of the user or other persons may be  
    endangered.  
    2011-07-28  
    6
    配单直通车
    BCR555E6327HTSA1产品参数
    型号:BCR555E6327HTSA1
    是否Rohs认证： 符合
    生命周期：End Of Life
    IHS 制造商：INFINEON TECHNOLOGIES AG
    包装说明：SMALL OUTLINE, R-PDSO-G3
    Reach Compliance Code：compliant
    ECCN代码：EAR99
    HTS代码：8541.21.00.75
    Factory Lead Time：4 weeks
    风险等级：6.34
    Is Samacsys：N
    其他特性：BUILT-IN BIAS RESISTOR RATIO 0.22
    最大集电极电流 (IC)：0.5 A
    集电极-发射极最大电压：50 V
    配置：SINGLE WITH BUILT-IN RESISTOR
    最小直流电流增益 (hFE)：70
    JESD-30 代码：R-PDSO-G3
    JESD-609代码：e3
    湿度敏感等级：1
    元件数量：1
    端子数量：3
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：SMALL OUTLINE
    峰值回流温度（摄氏度）：NOT SPECIFIED
    极性/信道类型：PNP
    表面贴装：YES
    端子面层：Tin (Sn)
    端子形式：GULL WING
    端子位置：DUAL
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    晶体管应用：SWITCHING
    晶体管元件材料：SILICON
    标称过渡频率 (fT)：150 MHz
    Base Number Matches：1
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