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产品型号BD778的Datasheet PDF文件预览

Order this document  
by BD777/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general purpose amplifier and high–speed switching applications.  
High DC Current Gain  
= 1400 (Typ) @ I = 2.0 Adc  
Collector–Emitter Sustaining Voltage — @ 10 mAdc  
h
FE  
C
*Motorola Preferred Device  
V
V
V
= 45 Vdc (Min) — BD776  
= 60 Vdc (Min) — BD777, 778  
= 80 Vdc (Min) — BD780  
CEO(sus)  
CEO(sus)  
CEO(sus)  
DARLINGTON  
4–AMPERE  
COMPLEMENTARY  
SILICON  
Reverse Voltage Protection Diode  
Monolithic Construction with Built–in Base–Emitter output Resistor  
POWER TRANSISTORS  
45, 60, 80 VOLTS  
15 WATTS  
MAXIMUM RATINGS  
BD777  
BD778  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol BD776  
BD780  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
45  
45  
60  
60  
CEO  
V
80  
CB  
V
EB  
5.0  
Collector Current —  
Continuous Peak  
I
C
4.0  
6.0  
Base Current  
I
B
100  
mAdc  
Total Device Dissipation  
P
D
15  
0.12  
Watts  
W/ C  
T
C
= 25 C – Derate above 25 C  
CASE 77–08  
TO–225AA TYPE  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
8.34  
83.3  
C/W  
θJC  
θJA  
Thermal Resistance, Junction to Ambient  
R
C/W  
16  
1.6  
1.2  
0.8  
12  
8.0  
4.0  
0.4  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (°C)  
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (1)  
(I = 10 mAdc, I = 0)  
BD776  
BD777, BD778  
BD780  
V
45  
60  
80  
Vdc  
CEO(sus)  
O
B
Collector Cutoff Current  
I
µAdc  
CEO  
CBO  
(V  
CE  
(V  
CE  
(V  
CE  
= 20 Vdc, I = 0)  
BD776  
BD777, BD778  
BD780  
100  
100  
100  
B
= 30 Vdc, I = 0)  
B
= 40 Vdc, I = 0)  
B
Collector Cutoff Current  
I
µAdc  
µAdc  
(V  
CB  
(V  
CB  
= Rated, V  
= Rated, V  
, I = 0)  
, I = 0, I = 100°C)  
E
1.0  
100  
CEO(sus)  
CEO(sus)  
E
C
Emitter Cutoff Current (V  
= 5.0 Vdc, I = 0)  
I
EBO  
1.0  
BE  
C
ON CHARACTERISTICS  
DC Current Gain (I = 2.0 Adc, V  
= 3.0 Vdc)  
H
750  
C
CE  
FE  
Collector–Emitter Saturation Voltage (I = 1.5 Adc, I = 6 mAdc)  
V
1.5  
2.5  
2.3  
2.0  
Vdc  
Vdc  
Vdc  
Vdc  
C
B
CE(Sat)  
BE(Sat)  
Base Emitter Saturation Voltage (I = 1.5 Adc, I = 6 mAdc)  
V
C
B
Base–Emitter On Voltage (I = 1.5 Adc,V  
CE  
= 3 Vdc)  
V
C
BE(On)  
Output Diode Voltage Drop (I  
EC  
= 2.0 Adc)  
V
EC  
DYNAMIC CHARACTERISTICS  
Current Gain Bandwidth Product (I = 1.0 Adc, V  
= 2.0 Vdc)  
f
T
20  
MHz  
C
CE  
Symbol  
Min  
Typ  
Unit  
Turn–On Time (I = 250 mA/V  
CE  
= 2 V)  
= 2 V)  
BD775–777  
BD776–778–780  
t
250  
150  
ns  
C
on  
Turn–Off Time (I = 250 mA, V  
C
BD775–777  
BD776–778–780  
t
600  
400  
ns  
CE  
off  
10  
3000  
2000  
1500  
100 µs  
777  
5.0  
500 µs  
2.0  
1.0  
1.0 ms  
= 150  
5.0 ms  
1000  
700  
BD776, 778, 780  
T
°C  
dc  
J
0.5  
BONDING WIRE LIMITED  
THERMALLY LIMITED @ T = 25°C  
C
(SINGLE PULSE)  
500  
400  
T
= 25°C  
J
SECONDARY BREAKDOWN LIMITED  
0.1  
300  
V
CE  
= 2.0 Vdc  
CURVES APPLY BELOW RATED V  
CEO  
0.05  
200  
BD775, 776  
BD777, 778  
BD780  
0.02  
0.01  
100  
1.0  
2.0  
V
3.0 5.0  
7.0 10  
20  
30  
50 70 100  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0 4.0 5.0  
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
I
, COLLECTOR CURRENT (AMP)  
C
Figure 2. Active Region Safe Operating Area  
Figure 3. Typical DC Current Gain  
COLLECTOR  
COLLECTOR  
PNP  
NPN  
BD776  
BD778  
BD780  
BD777  
BD779  
BASE  
BASE  
150  
150  
EMITTER  
EMITTER  
Figure 4. Darlington Circuit Schematic  
2
Motorola Bipolar Power Transistor Device Data  
PACKAGE DIMENSIONS  
–B–  
NOTES:  
F
C
U
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
Q
M
INCHES  
MILLIMETERS  
–A–  
DIM  
A
B
C
D
F
MIN  
MAX  
0.435  
0.305  
0.105  
0.026  
0.130  
MIN  
10.80  
7.50  
2.42  
0.51  
2.93  
MAX  
11.04  
7.74  
2.66  
0.66  
3.30  
1
2
3
0.425  
0.295  
0.095  
0.020  
0.115  
H
K
G
H
J
K
M
Q
R
S
0.094 BSC  
2.39 BSC  
0.050  
0.015  
0.575  
5
0.095  
0.025  
0.655  
1.27  
0.39  
14.61  
5
2.41  
0.63  
16.63  
TYP  
TYP  
J
V
G
0.148  
0.045  
0.025  
0.145  
0.040  
0.158  
0.055  
0.035  
0.155  
–––  
3.76  
1.15  
0.64  
3.69  
1.02  
4.01  
1.39  
0.88  
3.93  
–––  
R
M
M
M
0.25 (0.010)  
A
B
S
U
V
D 2 PL  
STYLE 1:  
PIN 1. EMITTER  
M
M
M
0.25 (0.010)  
A
B
2. COLLECTOR  
3. BASE  
CASE 77–08  
TO–225AA TYPE  
ISSUE V  
3
Motorola Bipolar Power Transistor Device Data  
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,  
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
How to reach us:  
USA / EUROPE: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,  
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447  
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315  
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609  
INTERNET: http://Design–NET.com  
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
BD777/D  
配单直通车
BD778产品参数
型号:BD778
生命周期:Transferred
包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown
风险等级:5.46
最大集电极电流 (IC):4 A
集电极-发射极最大电压:60 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):750
JEDEC-95代码:TO-225AA
JESD-30 代码:R-PSFM-T3
JESD-609代码:e0
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
极性/信道类型:PNP
功耗环境最大值:15 W
最大功率耗散 (Abs):15 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE
端子位置:SINGLE
晶体管应用:SWITCHING
晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHz
VCEsat-Max:1.5 V
Base Number Matches:1
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