Philips Semiconductors
RF Power Transistors for UHF
Line-ups
INTRODUCTION
In this section, we present information on recommended circuit line-ups in the main RF power application areas.
A comprehensive range of output power levels is indicated, together with our recommended types in the particular line-up
configuration. The necessary drive power level for each line-up is indicated in the first column.
More detailed application information can be found in the application reports book “Bipolar and MOS Transmitting
Transistors”.
AM AIRCRAFT TRANSMITTERS (100 to 400 MHz)
Bipolar
INPUT
POWER
(mW)
PL(carr)
(W)
VCE
(V)
S = stud
F = flange
1st STAGE
BLW89
2nd STAGE
2 × BLW90
3rd STAGE
40
60
2 × BLX94C
2 × BLU60/28
2 × BLU60/28
40
60
28
28
28
S
BLW89
BLW90
2 × BLW91
S/F
S/F
500
2 × BLX94C
120
PowerMOS
INPUT
POWER
(mW)
PL(carr)
(W)
VCE
(V)
1st STAGE
2nd STAGE
3rd STAGE
30
25
BLF521(1)
BLF521(1)
BLF521(1)
BLF521(1)
BLF522(1)
BLF543
BLF543
BLF544
BLF545
BLF546
BLF547
BLF548
40
80
28
28
28
28
30
100
150
100
Note
1. VDS = 12.5 V.
PORTABLE and MOBILE TRANSMITTERS (400 to 512 MHz)
Bipolar
INPUT
POWER
(mW)
PL
(W)
VCE
(V)
1st STAGE
BLV90
2nd STAGE
BLU99
3rd STAGE
45
15
3
7.5
13
BFR96S
BLU99
BLU99
BLU99
BLU99
BLW81
10
20
45
60
400
280
400
BLU20/12
BLU20/12
BLU20/12
BLU45/12
BLU60/12
13
13
1996 Feb 12
2