Philips Semiconductors
Product specification
UHF power transistor
BLV103
FEATURES
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
• Internal matching for an optimum
wideband capability and high gain
f
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(MHz)
• Emitter-ballasting resistors for
optimum temperature profile
c.w. class-AB
960
24
4
> 11.5
> 45
• Gold metallization ensures
excellent reliability.
WARNING
Product and environmental safety - toxic materials
DESCRIPTION
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
NPN silicon planar epitaxial transistor
encapsulated in a 6-lead SOT171
flange envelope with a ceramic cap. It
is intended for common emitter,
class-AB operation in cellular radio
base stations in the 960 MHz
frequency band. All leads are isolated
from the mounting base.
PIN CONFIGURATION
PINNING - SOT171
k, halfpage
PIN
DESCRIPTION
emitter
1
2
3
4
5
6
c
1
2
4
6
emitter
base
handbook, halfpage
3
5
b
collector
emitter
emitter
e
MBB012
MBA931 - 1
Top view
Fig.1 Simplified outline and symbol.
March 1993
2