BR93G66F-3GTE2全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

产品型号BR93G66F-3GTE2的Datasheet PDF文件预览

Datasheet

Serial EEPROM series Standard EEPROM

MicroWire BUS EEPROM (3-Wire)

BR93G66-3

General Description

BR93G66-3 is serial EEPROM of Serial 3-Line Interface Method.

They are dual organization (by 16bit or 8bit) and it is selected by the input of ORG PIN.

Features

Packages W(Typ) x D(Typ)x H(Max)

■ 3-Line Communications of chip select, serial clock,

serial data input / output (the case where input and

output are shared)

■ Operations available at High Speed 3MHz clock

(4.5V to 5.5V)

■ High Speed Write available (Write Time 5ms Max）

DIP-T8

9.30mm x 6.50mm x 7.10mm

TSSOP-B8

3.00mm x 6.40mm x 1.20mm

■ Same package and pin configuration from 1Kbit to

16Kbit

■ 1.7V to 5.5V Single Power Source Operation

■ Address Auto Increment Function at Read

Operation

SOP8

TSSOP-B8J

3.00mm x 4.90mm x 1.10mm

5.00mm x 6.20mm x 1.71mm

■ Prevention of Write Error

» Write Prohibition at Power On

» Write Prohibition by Command Code

» Prevention of Write Error at Low Voltage

■ Self-Timed Programming Cycle

■ Program Condition Display by READY / BUSY

■ Dual Organization: by 16 bit (X16) or 8 bit (X8)

■ Compact Package

SOP- J8

4.90mm x 6.00mm x 1.65mm

MSOP8

2.90mm x 4.00mm x 0.90mm

SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8

TSSOP-B8J DIP-T8 VSON008X2030

■ More than 40 years data retention

■ More than 1 million Write Cycles

■ Initial Delivery State all addresses FFFFh (X16) or

FFh (X8)

SSOP-B8

3.00mm x 6.40mm x 1.35mm

VSON008X2030

2.00mm x 3.00mm x 0.60mm

BR93G66-3

Power Source

Voltage

VSON008

X2030

DIP-T8⁽¹⁾SOP8 SOP-J8 SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8

Capacity

Bit Format

Type

4Kbit

256×16 or 512×8 BR93G66-3

1.7V to 5.5V

●

(1) DIP-T8 is not halogen free package

○Product structure：Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays

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Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Remark

Supply Voltage

Vcc

-0.3 to +6.5

800 (DIP-T8)

Derate by 8.0mW/°C when operating above Ta=25°C

Derate by 4.5mW/°C when operating above Ta=25°C

Derate by 3.0mW/°C when operating above Ta=25°C

Derate by 3.3mW/°C when operating above Ta=25°C

Derate by 3.1mW/°C when operating above Ta=25°C

Derate by 3.0mW/°C when operating above Ta=25°C

450 (SOP8)

450 (SOP-J8)

300 (SSOP-B8)

330 (TSSOP-B8)

310 (TSSOP-B8J)

310 (MSOP8)

Permissible

Dissipation

300 (VSON008X2030)

Storage

Tstg

Topr

－65 to +150

－40 to +85

℃

Temperature

Operating

Temperature

The Max value of Input Voltage/Output Voltage is not over 6.5V.

When the pulse width is 50ns or less, the Min value of Input

Voltage/Output Voltage is not under -0.8V.

Input Voltage/

Output Voltage

‐

-0.3 to Vcc+1.0

150

Junction

Temperature

Tjmax

℃

Junction temperature at the storage condition

Memory Cell Characteristics (V_CC=1.7V to 5.5V)

Limit

Parameter

Unit

Conditions

Min

1,000,000

Typ

Max

Write Cycles ⁽¹⁾

Times

Years

Ta=25℃

Data Retention ⁽¹⁾

○Initial data in all addresses are either FFFFh(X16) or FFh(X8) upon delivery.

(1) Not 100% TESTED

Recommended Operating Ratings

Parameter

Symbol

Vcc

Limit

Unit

Supply Voltage

Input Voltage

1.7 to 5.5

0 to Vcc

V_IN

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DC Characteristics (Unless otherwise specified, Vcc=1.7V to 5.5V, Ta=-40℃ to +85℃)

Limit

Parameter

Symbol

Unit

Conditions

Min

Typ

Max

Input Low Voltage

V_IL

V_IH

-0.3⁽¹⁾

0.3Vcc

Vcc+1.0

0.4

1.7V≦Vcc≦5.5V

Input High Voltage

0.7Vcc

1.7V≦Vcc≦5.5V

I_OL=2.1mA, 2.7V≦Vc≦5.5V

I_OL=100μA

Output Low Voltage 1

Output Low Voltage 2

Output High Voltage 1

Output High Voltage 2

Input Leakage Current1

Input Leakage Current2

Output Leakage Current

V_OL1

V_OL2

V_OH1

V_OH2

I_LI1

0.2

2.4

Vcc

I_OH=-0.4mA, 2.7V≦Vcc≦5.5V

I_OH=-100μA

Vcc-0.2

-1

µA

V_IN=0V to Vcc(CS,SK,DI)

V_IN=0V to Vcc(ORG)

V_OUT=0V to Vcc, CS=0V

I_LI2

I_LO

Vcc=1.7V, f_SK=1MHz, t_E/W=5ms

(WRITE)

1.0

I_CC1

I_CC2

I_CC3

Vcc=5.5V ,f_SK=3MHz, t_E/W=5ms

(WRITE)

2.0

0.5

f_SK=1MHz (READ)

f_SK=3MHz (READ)

Supply Current

1.0

Vcc=2.5V, f_SK=1MHz

t_E/W=5ms (WRAL, ERAL)

2.0

Vcc=5.5V ,f_SK=3MHz

3.0

_E/W=5ms (WRAL, ERAL)

I_SB1

I_SB2

2.0

CS=0V, ORG=Vcc or OPEN

CS=0V, ORG=0V

Standby Current

(1) When the pulse width is 50ns or less, the Min value of V_ILis admissible to -0.8V.

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AC Characteristics (Unless otherwise specified, Vcc=1.7V to 2.5V, Ta=-40℃ to +85℃)

Limit

Parameter

Symbol

Unit

Min

Typ

Max

SK Frequency

SK High Time

SK Low Time

CS Low Time

CS Setup Time

DI Setup Time

CS Hold Time

DI Hold Time

f_SK

t_SKH

t_SKL

t_CS

MHz

250

200

100

t_CSS

t_DIS

t_CSH

t_DIH

t_PD1

t_PD0

t_SV

100

Data “1” Output Delay

400

200

Data “0” Output Delay

Time from CS to Output Establishment

Time from CS to High-Z

Write Cycle Time

t_DF

t_E/W

(Unless otherwise specified, Vcc=2.5V to 4.5V, Ta=-40℃ to +85℃)

Limit

Parameter

Symbol

Unit

Min

Typ

Max

SK Frequency

SK High Time

SK Low Time

CS Low Time

CS Setup Time

DI Setup Time

CS Hold Time

DI Hold Time

f_SK

t_SKH

t_SKL

t_CS

MHz

230

200

100

t_CSS

t_DIS

t_CSH

t_DIH

t_PD1

t_PD0

t_SV

100

Data “1” Output Delay

200

150

100

Data “0” Output Delay

Time from CS to Output Establishment

Time from CS to High-Z

Write Cycle Time

t_DF

t_E/W

(Unless otherwise specified, Vcc=4.5V to 5.5V, Ta=-40℃ to +85℃)

Limit

Parameter

Symbol

Unit

Min

Typ

Max

SK Frequency

SK High Time

SK Low Time

CS Low Time

CS Setup Time

DI Setup Time

CS Hold Time

DI Hold Time

f_SK

t_SKH

t_SKL

t_CS

MHz

100

200

t_CSS

t_DIS

t_CSH

t_DIH

t_PD1

t_PD0

t_SV

Data “1” Output Delay

200

150

100

Data “0” Output Delay

Time from CS to Output Establishment

Time from CS to High-Z

Write Cycle Time

t_DF

t_E/W

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Serial Input / Output Timing

1/ f_SK

t_{CS S}

t_SKH

t_SKL

t_CSH

t_DIS

t_{D I H}

t_PD1

t_PD0

DO (REA D)

t _DF

t_SV

DO(WRITE)

STATUS VALID

Figure 1. Serial Input / Output Timing

1. Data is taken by DI sync with the rise of SK.

2. At read operation, data is output from DO in sync with the rise of SK.

3. The STATUS signal at write (READY / BUSY) is output after t_CSfrom the fall of CS after write command input, at the area

DO where CS is high, and valid until the next command start bit is input. And, while CS is low, DO becomes High-Z.

4. After completion of each mode execution, set CS low once for internal circuit reset, and execute the following operation

mode.

5. 1/f_SKis the SK clock cycle, even if f_SKis maximum, the SK clock cycle can’t be t_SKH(Min)+t_SKL(Min)

6. For “Write cycle time t_E/W”, please see Figure 36,37,39,40.

7. For “CS low time t_CS”, please see Figure 36,37,39,40.

Block Diagram

Power Source Voltage

Command Decode

Control

Clock Generation

Write

High Voltage Occurrence

Prohibition

Address

Decoder

Command

Buffer

8bit

9bit

8bit

9bit

4,096 bit

EEPROM

Data

R/W

ORG

16bit/8bit

Amplifier

Dummy Bit

Figure 2. Block Diagram

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Pin Configuration

(TOP VIEW)

VCC

ORG

GND

BR93G66-3

BR93G66F-3

:DIP-T8

:SOP8

BR93G66FJ-3

BR93G66FV-3

BR93G66FVT-3

BR93G66FVJ-3

BR93G66FVM-3

BR93G66NUX-3

:SOP-J8

:SSOP-B8

:TSSOP-B8

:TSSOP-B8J

:MSOP8

:VSON008X2030

Figure 3. Pin Configuration

Pin Description

Pin Name

I / O

Input

Description

Chip select input

Serial clock input

Start bit, ope code, address, and serial data input

―――――

GND

ORG

Output

Serial data output, READY / BUSY STATUS display output

All input / output reference voltage, 0V

Organization select, X16mode or X8 mode⁽¹⁾

Don’t use terminal ⁽²⁾

Input

VCC

Supply voltage

(1) The memory array organization may be divided into either X8 or X16 which is selected by pin ORG.

When ORG is OPEN or connected to V_CC, X16 organization is selected.

When ORG is connected to ground, X8 organization is selected.

(2) Terminals not used may be set to any of high, low, and OPEN

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Typical Performance Curves

Ta=-40℃

Ta= 25℃

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

SUPPLY VOLTAGE: Vcc(V)

Figure 4. Input High Voltage vs Supply Voltage

(CS,SK,DI,ORG)

Figure 5. Input Low Voltage vs Supply Voltage

(CS,SK,DI,ORG)

Ta=-40℃

Ta= 25℃

Ta= 85℃

Ta=-40℃

Ta= 25℃

Ta= 85℃

0.8

0.6

0.4

0.2

0.8

0.6

0.4

0.2

SPEC

OUTPUT LOW CURRENT : I_OL(mA)

OUTPUT LOW CURRENT:I_OL(mA)

Figure 6. Output Low Voltage1 vs Output Low Current

(V_CC=2.7V)

Figure 7. Output Low Voltage2 vs Output Low Current

(V_CC=1.7V)

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Typical Performance Curves‐Continued

Ta=-40℃

Ta= 25℃

Ta= 85℃

Ta= 25℃

Ta= 85℃

SPEC

0.4

0.8

1.2

1.6

0.4

0.8

1.2

1.6

OUTPUT HIGH CURRENT: I_OH(mA)

Figure 9. Output High Voltage2 vs Output High Current

(V_CC=1.7V)

Figure 8. Output High Voltage1 vs Output High Current

(V_CC=2.7V)

1.2

SPEC

0.8

Ta=-40℃

SPEC

Ta= 25℃

Ta= 85℃

0.6

Ta=-40℃

Ta= 25℃

Ta= 85℃

0.4

0.2

SUPPLYVOLTAGE: Vcc(V)

SUPPLY VOLTAGE: Vcc(V)

Figure 11. Input Leakage Curren2t vs Supply Voltage

(ORG)

Figure 10. Input Leakage Current1 vs Supply Voltage

(CS,SK,DI)

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Typical Performance Curves‐Continued

1.2

2.5

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

0.8

Ta=-40℃

Ta= 25℃

Ta= 85℃

1.5

0.6

SPEC

0.4

0.2

0.5

SUPPLY VOLTAGE: Vcc(V)

Figure 13. Supply Current (WRITE) vs Supply Voltage

( f_SK=1MHz)

Figure 12. Output Leakage Current (DO)

vs Supply Voltage

2.5

Ta=-40℃

Ta= 25℃

Ta= 85℃

1.5

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

0.5

SUPPLY VOLTAGE: Vcc(V)

Figure 15. Supply Current (READ) vs Supply Voltage

(f_SK=1MHz)

Figure 14. Supply Current (WRITE) vs Supply Voltage

(f_SK=3MHz)

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Typical Performance Curves‐Continued

2.5

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

1.5

SPEC

0.5

SUPPLY VOLTAGE: Vcc(V)

Figure 16. Supply Current (READ) vs Supply Voltage

(f_SK=3MHz)

Figure 17. Supply Current (WRAL) vs Supply Voltage

(f_SK=1MHz)

2.5

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

1.5

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

0.5

SUPPLY VOLTAGE: Vcc(V)

Figure 19. Standby Current vs Supply Voltage

(CS=0V, ORG=V_CCor OPEN)

Figure 18. Supply Current (WRAL) vs Supply Voltage

(f_SK=3MHz)

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Typical Performance Curves‐Continued

1000

100

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

Ta=-40℃

Ta= 25℃

SPEC

Ta= 85℃

SPEC

0.1

0.01

SUPPLY VOLTAGE: Vcc(V)

Figure 21. SK Frequency vs Supply Voltage

Figure 20. Standby Current vs Supply Voltage

(CS=0V, ORG=0V)

500

400

300

200

100

500

400

300

200

100

Ta=-40℃

Ta= 25℃

Ta= 85℃

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

SUPPLY VOLTAGE: Vcc(V)

SUPPLYVOLTAGE: Vcc(V)

Figure 22. SK High Time vs Supply

V lt

Figure 23. SK Low Time vs Supply Voltage

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Typical Performance Curves‐Continued

500

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

400

-50

Ta=-40℃

Ta= 25℃

Ta= 85℃

300

-100

-150

-200

-250

-300

SPEC

200

100

SUPPLYVOLTAGE: Vcc(V)

Figure 24. CS Low Time vs Supply Voltage

Figure 25. CS Hold Time vs Supply Voltage

150

100

300

250

200

150

100

SPEC

Ta=-40℃

SPEC

Ta= 25℃

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

-50

SUPPLY VOLTAGE: Vcc(V)

Figure 27. DI Setup Time vs Supply Voltage

Figure 26. CS Setup Time vs Supply Voltage

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Typical Performance Curves‐Continued

150

1000

800

600

400

200

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

100

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

-50

SUPPLY VOLTAGE: Vcc(V)

SUPPLYVOLTAGE: Vcc(V)

Figure 28. DI Hold Time vs Supply Voltage

Figure 29. Data "0" Output Delay vs

Supply Voltage

1000

800

600

400

200

500

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

400

300

200

100

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

SUPPLYVOLTAGE: Vcc(V)

SUPPLY VOLTAGE: Vcc(V)

Figure 30. Data "1" Output Delay

vs Supply Voltage

Figure 31. Time from CS to output establishment

vs Supply Voltage

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Typical Performance Curves‐Continued

250

SPEC

200

Ta=-40℃

Ta= 25℃

150

Ta= 85℃

SPEC

100

Ta=-40℃

Ta= 25℃

Ta= 85℃

SUPPLY VOLTAGE: Vcc(V)

Figure 33. Write Cycle Time vs

Supply Voltage

Figure 32. Time from CS to High-Z vs

Supply Voltage

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Description of Operations

Communications of the MicroWire BUS are carried out by SK (serial clock), DI (serial data input),DO (serial data output) ,and

CS (chip select) for device selection.

When connecting one EEPROM to a microcontroller, connect it as shown in Figure 34(a) or Figure 34(b). And when using

the input and output common I/O port of the microcontroller, connect DI and DO of EEPROM via a resistor as shown in

Figure 34(b) (Refer to pages 21, 22.), wherein connection by 3 lines is possible.

In the case of connecting multiple EEPROM devices, refer to Figure 34 (c).

Micro-

controller

Micro-

controller

BR93GXX

Micro-

controller

CS3

CS2

CS1

DI/O

Device 2

(c). Connection Example of Multiple Devices

Device 1

Device 3

(a). Connection by 4 Lines

(b). Connection by 3 Lines

Figure 34. Connection Method with Microcontroller

Communications on MicroWire BUS is started by the first “1” input after the rise of CS. This input is called the “Start Bit”.

After the start bit, the Ope code, address and data are then inputted sequentially. Address and data are all inputted with MSB

first.

“0” inputs from the rise of CS to the start bit input are all ignored. Therefore, when there is limitation in the bit width of PIO of

the microcontroller, input “0” before the start bit input, to control the bit width.

Command Mode

ORG=H or OPEN

Address

Start

Bit

Ope

Code

Data

Command

Required Clocks(n)

BR93G66-3

MSB of Address(Am) is A7

MSB of Data(Dx) is D15

Read (READ) ⁽¹⁾

A7,A6,A5,A4,A3,A2,A1,A0

D15 to D0(READ DATA)

BR93G66-3:n=27

BR93G66-3:n=11

Write Enable (WEN)

Write Disable (WDS)

Write (WRITE) ⁽²⁾

Write All (WRAL) ⁽²⁾

Erase (ERASE)

* * * * * *

A7,A6,A5,A4,A3,A2,A1,A0

* * * * * *

A7,A6,A5,A4,A3,A2,A1,A0

* * * * * *

D15 to D0(WRITE DATA)

BR93G66-3:n=27

BR93G66-3:n=11

Erase All (ERAL)

ORG=L

Address

Start

Bit

Ope

Code

Data

Command

Required Clocks(n)

BR93G66-3

MSB of Address(Am) is A8

MSB of Data(Dx) is D7

Read (READ) ⁽¹⁾

A8,A7,A6,A5,A4,A3,A2,A1,A0

D7 to D0(READ DATA)

BR93G66-3:n=20

BR93G66-3:n=12

Write Enable (WEN)

Write Disable (WDS)

Write (WRITE) ⁽²⁾

Write All (WRAL) ⁽²⁾

Erase (ERASE)

* * * * * * *

A8,A7,A6,A5,A4,A3,A2,A1,A0

* * * * * * *

A8,A7,A6,A5,A4,A3,A2,A1,A0

* * * * * * *

D7 to D0(WRITE DATA)

BR93G66-3:n=20

BR93G66-3:n=12

Erase All (ERAL)

・ Input the address and the data in MSB first manners.

・ As for *, input either “1” or “0” .

*Start bit

Acceptance of all the commands of this IC starts at recognition of the start bit.

The start bit means the first “1” input after the rise of CS.

(1) As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and address data in significant order are

sequentially output continuously. (Auto increment function)

(2) For write or write all commands, an internal erase or erase all is included and no separate erase or erase all is needed before write or write all command.

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Timing Chart

1. Read Cycle (READ)

～～

(1)

n+1

(2)

Am: MSB of address

Dx: MSB of data

n: required clocks

～～

(2)

Dx Dx-1

High-Z

(1) Start bit

After the rising edge of CS, the first data “1” input will be recognized as the start bit and the following operation starts. All “0s” preceding the start bit

are ignored. This applies to all command that will be discussed later.

(2) For the meaning of Am,Dx,n,please see tables of command mode in Page15. For example, ORG=H or OPEN,Am=A7,Dx=D15,n=27.

Figure 35. Read Cycle

(1) When the READ command is received, data is clocked out to DO synchronously with the rising edge of SK. A “0”

(dummy bit) is output first in sync with the address bit A0. Then follows the 16-bit data from the selected address

MSB first.

This IC has an Address Auto Increment function that is available only for READ command. After the first 16-bit data

has been output to DO and CS is kept High, a continuous SK clock input causes the address to increment

automatically and the IC outputs a stream of successive data from consecutive addresses.

2. Write Cycle (WRITE)

～～

t_CS

STATUS

～～

Am: MSB of address

Dx: MSB of data

n: required clocks

～～

Dx Dx-1

t_SV

READY

BUSY

～～

High-Z

t_E/W

For the meaning of Am,Dx,n, please see tables of command mode in Page15.

Figure 36. Write Cycle

(1) In this command, input 16bit or 8bit data are written to designated addresses (Am to A0). The actual write starts by

the fall of CS of D0 taken SK clock.

When STATUS is not detected (CS=low fixed),make sure Max 5ms time is in comforming with t_E/W

When STATUS is detected (CS=high), all commands are not accepted for areas where low (BUSY) is output from

DO, therefore, do not input any command.

3. Write All Cycle (WRAL)

～～

t_CS

STATUS

～～

Dx: MSB of data

n: required clocks

～～

Dx Dx-1

～～

t_SV

BUSY

READY

～～

High-Z

t_E/W

For the meaning of Dx,n,please see tables of command mode in Page15.

Figure 37. Write All Cycle

(1) In this command, input 16bit or 8bit data is written simultaneously to all adresses. Data is not written continuously

per one word but is written in bulk, the write time is only Max 5ms in conformity with t_E/W

In WRAL, STATUS can be detected in the same manner as in WRITE command.

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4. Write Enable (WEN) / Disable (WDS) Cycle

～～

n: required clocks

ENABLE=1

DISABLE=0

～～

High-Z

For the meaning of n,please see tables of command mode in Page15.

Figure 38. Write Enable (WEN) / Disable (WDS) Cycle

(1) At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write command, it

is necessary to execute the write enable command. And, once this command is executed, it is valid unitl the write

disable command is executed or the power is turned off. However, the read command is valid irrespective of write

enable / diable command. Input to SK after 6 clocks of this command is available by either “1” or “0”, but be sure to

input it.

(2) When the write enable command is executed after power on, write enable status gets in. When the write disable

command is executed then, the IC gets in write disable status as same as at power on, and then the write command

is canceled thereafter in software manner. However, the read command is executable. In write enable status, even

when the write command is input by fault, write is started. To prevent such error, it is recommended to execute the

write disable command after completion of write.

5. Erase Cycle (ERASE)

～～

STATUS

t_CS

～～

Am: MSB of address

n: required clocks

～～

t_SV

BUSY

READY

～～

High-Z

t_E/W

For the meaning of Am,n,please see tables of command mode in Page15.

Figure 39. Erase Cycle

(1) In this command, data of the designated address is made into “1”. The data of the designated address becomes

“FFFFh or FFh”.

Actual ERASE starts at the fall of CS after the fall of A0 taken SK clock.

In ERASE, STATUS can be detected in the same manner as in WRITE command.

6. Erase All Cycle (ERAL)

～～

t_CS

～～

STATUS

～～

n: required clocks

～～

t_SV

READY

BUSY

～～

High-Z

t_E/W

For the meaning of n,please see tables of command mode in Page15.

Figure 40. Erase All Cycle

(1) In this command, data of all addresses is made into “1”. Data of all addresses becomes ”FFFFh or FFh”.

Actual ERASE starts at the fall of CS after the falll of the n-th clock from the start bit input.

In ERAL, STATUS can be detected in the same manner as in WRAL command.

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(1) For the meaning of m,x, please see tables of Command Mode in Page15

Clock Rise of D0 taken

BR93G66-3

Application

1. Method to cancel each command

(1) READ

Start bit

Ope code

Address⁽¹⁾

Data ⁽¹⁾

1bit

2bit

m+1bit

x+1bit

Cancel is available in all areas in read mode.

・Method to cancel：cancel by CS=low

Figure 41. READ Cancel Available Timing

(2) WRITE,WRAL

n-1

n+1

n+2

Enlarged figure

(1)

Start bit

Ope code

Address

Data

x+1bit

t_E/W

(1) For the meaning of m,n,x,

please see tables of Command Mode in Page15

1bit

2bit

m+1bit

a：From start bit to the clock rise of D0 taken

Cancel by CS=low

b：When taken after the clock rise of D0.

Cancellation will be no longer possible.

Note 1) If Vcc is turned OFF in this area, designated address data is not

guaranteed, therefore, it is recommended to execute WRITE

once again.

c：n+1 clock rise and after

Cancel by CS=low

However, when write is started in b area (CS is ended), cancellation is

not available by any means.

And when SK clock is output continuously cancel function is not

available.

Note 2) If CS is started at the same timing as that of the SK rise,

write execution/cancel becomes uncertain. Therefore, it is

recommended to set CS to low in SK=low area.

As for SK rise, recommended timing is t_CSS/t_CSHor higher.

Figure 42. WRITE, WRAL Cancel Available Timing

(3) ERASE, ERAL

Clock rise of A0 taken

n-1

n+2

n+1

Enlarged figure

(1)

Start bit

Ope code

Address

t_E/W

(1) For the meaning of m,n,please see tables of Command Mode in Page15

1bit

2bit

m+1bit

a：From start bit to clock rise of A0 taken

Cancel by CS=low

b：Clock rise of A0 taken

Note 1) If Vcc is turned OFF in this area, designated address data is not

guaranteed, therefore, it is recommended to execute WRITE

once again.

Cancellation is not available by any means.

c：n+1 clock rise and after

Cancel by CS=low

However, when write is started in b area (CS is ended), cancellation is not

available by any means.

Note 2) If CS is started at the same timing as that of the SK rise,

write execution/cancel becomes unstable, therefore, it is

recommended to fall in SK=low area.

And when SK clock is output continuously cancel function is not available.

As for SK rise, recommended timing is t_CSS/t_CSHor higher.

Figure 43. ERASE, ERAL Cancel Available Timing

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2. At Standby

When CS is low and ORG is high or OPEN, even if SK,DI, DO are low, high or with middle electric potential, current

does not exceed I_SB1Max

When CS is low, even if SK,DI, DO and ORG are low, high or with middle electric potential, current does not exceed I_SB2

Max

3. I/O Peripheral Circuit

(1) Pull Down CS.

By making CS=low at power ON/OFF, wrong operation and write error are prevented.

(a) Pull Down Resistance R_CSof CS Pin

To prevent wrong operation and write error at power ON/OFF, CS pull down resistor is necessary. Select an

appropriate resistor value from microcontroller V_OH, I_OH, and V_ILcharacteristics of this IC.

V_OHM

Rcs ≧

・・・①

I_OHM

Microcontroller

V_OHM

EEPROM

V_IHE

V_OHM

≧

V_IHE

・・・②

Example) When Vcc =5V, V_IHE=2V, V_OHM=2.4V, I_OHM=2mA,

from the equation ①,

2.4

Rcs ≧

High output

Low input

I_OHM

Rcs

2×10^-3

∴

Rcs ≧ 1.2 [kΩ]

With the value of Rpd to satisfy the above equation, V_OHMbecomes

2.4V or higher, and V_IHE(=2.0V), the equation ② is also satisfied.

Figure 44. CS Pull Down Resistance

・V_IHE

: EEPROM VIH specifications

・V_OHM: Microcontroller V_OHspecifications

・I_OHM: Microcontroller I_OHspecifications

(2) DO is available in both pull up and pull down.

DO output always is High-Z except in READY / BUSY STATUS and data output in read command.

When malfunction occurs at High-Z input of the microcontroller port connected to DO, it is necessary to pull down

and pull up DO. When there is no influence upon the microcontroller operations, DO may be left OPEN.

If DO is OPEN during transition of output from BUSY to READY status, and at an instance where CS=high,

SK=high, DI=high, EEPROM recognizes this as a start bit, resets READY output, and sets DO=High-Z. Therefore,

READY signal cannot be detected. To avoid such output, pull up DO pin for improvement.

High

Enlarged

High-Z

CS=SK=DI=High

When DO=OPEN

READY

High-Z

BUSY

Improvement by DO pull up

CS=SK=DI=High

When DO=pull up

READY

Figure 45. READY Output Timing at DO=OPEN

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(a) Pull Up Resistance R_PUand Pull Down Resistance R_PDof DO pin

As for pull up and pull down resistance value, select an appropriate resistor value from microcontroller V_IH, V_IL,

and V_OH, I_OH, V_OL, I_OLcharacteristics of this IC.

Vcc－V_OLE

Rpu ≧

・・・③

・・・④

Microcontroller

V_ILM

EEPROM

I_OLE

V_ILM

Rpu

V_OLE

≦

I_OLE

V_OLE

Example) When Vcc =5V, V_OLE=0.4V, I_OLE=2.1mA, V_ILM=0.8V,

from the equation ③,

Low input

5－0.4

Rpu ≧

2.1×10^-3

Low output

∴

Rpu ≧ 2.2 [kΩ]

With the value of Rpu to satisfy the above equation, V_OLEbecomes

0.4V or below, and with V_ILM(=0.8V), the equation ④ is also satisfied.

Figure 46. DO Pull Up Resistance

・V_OLE

・I_OLE

・V_ILM

: EEPROM V_OLspecifications

: EEPROM I_OLspecifications

: Microcontroller V_ILspecifications

V_OHE

Rpd ≧

・・・⑤

・・・⑥

EEPROM

I_OHE

V_IHM

Microcontroller

V_OHE

≧

V_IHM

Example) When Vcc =5V, V_OHE=Vcc－0.2V, I_OHE=0.1mA,

V_IHM=Vcc×0.7V from the equation ⑤,

V_OHE

I_OHE

High input

High output

Rpd

5－0.2

Rpd ≧

0.1×10^-3

∴

Rpd ≧ 48 [kΩ]

Figure 47. DO Pull Down Resistance

With the value of Rpd to satisfy the above equation, V_OHEbecomes 2.4V

or below, and with V_IHM(=3.5V), the equation ⑥ is also satisfied.

・V_OHE

・I_OHE

・V_IHM

: EEPROM V_OHspecifications

: EEPROM I_OHspecifications

: Microcontroller V_IHspecifications

(b) READY / BUSY STATUS display (DO terminal)

This display outputs the internal STATUS signal. When CS is started after t_CS

from CS fall after write command input, high or low is output.

R/B display＝low (BUSY) = write under execution

（DO STATUS）

After the timer circuit in the IC works and creates the period of t_E/W, this timer circuit completes automatically.

And the memory cell is written in the period of t_E/W, and during this period, other command is not accepted.

R/B display = high (READY) = command wait STATUS

（DO STATUS）

After t_E/W(Max5ms) the following command is accepted.

Therefore, CS=high in the period of t_E/W, and If signals are input in SK, DI, malfunction may occur,

therefore, DI=low in the area

CS=high. (Especially, in the case of shared input port, attention is required.)

*Do not input any command while STATUS signal is active. Command input in BUSY area is cancelled, but command input in READY area is accepted.

Therefore, STATUS READY output is cancelled, and malfunction and write error may occur.

STATUS

CLOCK

WRITE

INSTRUCTION

High-Z

t_SV

READY

BUSY

t_E/W

Figure 48. READY/BUSY STATUS Output Timing Chart

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4. When to Directly Connect DI and DO

This IC has independent input terminal DI and output terminal DO, wherein signals are handled separately on timing chart.

But, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by a single control

line.

Microcontroller

EEPROM

DI/O PORT

Figure 49. DI, DO Control Line Common Connection

Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input of EEPROM.

Drive from the microcontroller DI/O output to DI input of EEPROM on I/O timing, and output signal from DO output of

EEPROM occur at the same time in the following points.

(1) 1 Clock Cycle to take in A0 Address Data at Read Command

Dummy bit “0” is output to DO terminal.

→When address data A0 = “1” input, through current route occurs.

EEPROM CS input

High

EEPROM SK input

(1) For the meaning of x ,

please see tables of Command Mode in Page15.

EEPROM DI input

Collision of DI input and DO output

(1)

EEPROM DO output

Microcontroller DI/O port

Dx Dx-1 Dx-2

High-Z

Microcontroller output

Microcontroller input

Figure 50. Collision Timing at Read Data Output at DI, DO Direct Connection

(2) Timing of CS = high after write command. DO terminal in READY / BUSY function output.

When the next start bit input is recognized, High-Z gets in.

→Especially, at command input after write, when CS input is started with microcontroller DI/O output low,

READY output high is output from DO terminal, and through current route occurs.

Feedback input at timing of these (1) and (2) does not cause disorder in basic operations, if resistance R is inserted.

～～

EEPROM CS input

Write command

～～

EEPROM SK input

EEPROM DI input

～～

High-Z

READY

Collision of DI input and DO output

BUSY

EEPROM DO output

Microcontroller DI/O port

～～

BUSY

Write command

～～

Microcontroller output

Microcontroller input

Microcontroller output

Figure 51. Collision Timing at DI, DO Direct Connection

Note) As for the case (2), attention must be paid to the following.

When STATUS READY is active, DO and DI are shared, DI=high and the microcontroller DI/O=High-Z or the microcontroller DI/O=high,if SK clock

is input, DO output is input to DI and is recognized as a start bit, and malfunction may occur. As a method to avoid malfunction, at STATUS READY

output, set SK=low, or start CS within 4 clocks after high of READY signal is output.

Start bit

Because DI=high, set

SK=low at CS rise.

READY

High-Z

Figure.52 Start Bit Input Timing at DI, DO Direct Connection

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Selection of Resistance Value R

The resistance R becomes a short-circuit current limiting resistance during signal conflicts and it does not affect the

basic operations of the device. When short-circuit current flows, glitches in the power source lines may be produced.

Determine the maximum transient current in the power lines wherein glitches are not produced. Select the value of

resistance R that will satisfy the EEPROM input level V_IH/V_IL, even under the influence of voltage fluctuations resulting

from short-circuit current and so forth. Assuming the allowable short-circuit current defined as I, the following relation

should be satisfied.

(3) Address Data A0 = “1” input, dummy bit “0” Output Timing

(When microcontroller DI/O output is high, EEPROM DO outputs low, and high is input to DI)

(a) Make the through current to EEPROM 10mA or below.

(b) See to it that the level V_IHof EEPROM should satisfy the following.

Conditions

Microcontroller

EEPROM

V_IHE≦ I_OHM×R + V_OLE

At this moment, if V_OLE=0V,

DI/O PORT

V_OHM

I_OHM

V_IHE≦ I_OHM×R

High output

V_IHE

R ≧

∴

・・・⑦

I_OHM

・V_IHE

: EEPROM V_IHspecifications

V_OLE

・V_OLE: EEPROM V_OLspecifications

・I_OHM: Microcontroller I_OHspecifications

Low outpu

Figure 53. Circuit at DI, DO Direct Connection (Microcontroller DI/O high output, EEPROM low output)

(4) DO STATUS READY Output Timing

(When the microcontroller DI/O is low, EEPROM DO output high, and low is input to DI)

(a) Set the EEPROM input level V_ILso as to satisfy the following.

Conditions

Microcontroller

DI/O PORT

EEPROM

V_ILE≧ V_OHE– I_OLM×R

As this moment, V_OHE=Vcc

Low output

V_OLM

V_ILE≧ Vcc – I_OLM×R

I_OLM

Vcc – V_ILE

∴

R ≧

・・・⑧

I_OLM

V_OHE

High output

・V_ILE

・V_OHE

・I_OLM

: EEPROM V_ILspecifications

: EEPROM V_OHspecifications

: Microcontroller I_OLspecifications

Example) When V_CC=5V, V_OHM=5V, I_OHM=0.4mA, V_OLM=5V, I_OLM=0.4mA,

From the equation ⑦,

From the equation⑧,

V_IHE

Vcc – V_ILE

R ≧

I_OHM

I_OLM

3.5

0.4×10^-3

5 – 1.5

2.1×10^-3

R ≧

∴

R ≧ 8.75 [kΩ] ・・・⑨

∴

R ≧ 1.67 [kΩ] ・・・⑩

Therefore, from the equations ⑨ and ⑩,

R ≧ 8.75 [kΩ]

Figure 54. Circuit at DI, DO Direct Connection (Microcontroller DI/O low output, EEPROM high output)

∴

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5. I/O Equivalence Circuit

Output Circuit

Input Circuit

RESET int.

CSint.

OEint.

Figure 56. Input Circuit (CS)

Figure 55. Output Circuit (DO)

Input Circuit

CS int.

Figure 57. Input Circuit (DI)

Figure 58. Input Circuit (SK)

6. Power-Up/Down Conditions

(1) At power ON/OFF, set CS low.

When CS is high, this IC gets in input accept status (active). At power ON, set CS low to prevent malfunction and

write error from noise (When CS is in low status, all inputs are cancelled.). At power decline, low power status may

prevail.

Therefore, at power OFF, set CS low to prevent malfunction from noise.

VCC

GND

VCC

GND

Bad example

Good example

Figure 59. Timing at Power ON/OFF

（Bad example）CS pin is pulled up to V_CC

（Good example）It is low at power ON/OFF.

Set 10ms or higher to recharge at power OFF.

When IC is turned ON while CS is high, EEPROM malfunction write error may occur

due to noise and the likes.

It’s also possible to happen even when CS input is High-Z.

When power is turned on without observing this condition,

IC internal circuit may not be reset, which please note.

(2) POR Circuit

This IC has a POR (Power On Reset) circuit as a write error countermeasure. After POR operation, it gets in write

disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if

CS is high at power ON/OFF, it may become write enable status owing to noises and the likes. For secure

operations, observe the following conditions.

(a) Set CS=low

(b) Turn on power so as to satisfy the recommended conditions of t_R, t_OFF, Vbot for POR circuit operation.

Recommended conditions of tR, tOFF, Vbot

t_R

VCC

t_R

t_OFF

Vbot

10ms or below

100ms or below

10ms or higher

0.3V or below

0.2V or below

t_OFF

Vbot

Figure 60. Rise Waveform Diagram

(3) LVCC Circuit

LVCC (Vcc-Lockout) circuit prevents data rewrite operation at low power, and prevents wrong write.

At LVCC voltage (Typ=1.2V) or below, it prevents data rewrite .

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7. Noise Countermeasures

(1) VCC Noise (Bypass Capacitor)

When noise or surge gets in the power source line, malfunction may occur. Therefore, in removing these, it is

recommended to connect a bypass capacitor (0.1μF) between IC VCC and GND, At that moment, connect the

capacitor as close to IC as possible. And, it is also recommended to connect a bypass capacitor between board

VCC and GND.

(2) SK Noise

When the rise time of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to

clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit

is set about 0.2V, if noises exist at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set

the rise time of SK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise

countermeasures. Make the clock rise, fall time as small as possible.

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Operational Notes

1. Described numeric values and data are design representative values only, and the values are not guaranteed.

2. We believe that application circuit examples are recommendable. However, in actual use, confirm characteristics further

sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin

in consideration of static characteristics and transition characteristics and fluctuations of external parts and our IC.

3. Absolute maximum ratings

If the absolute maximum ratings such as supply voltage and operating temperature and so forth are exceeded, LSI may

be destroyed. Do not supply voltage and temperature exceeding the absolute maximum ratings. In the case of fear

exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that

conditions exceeding the absolute maximum ratings should not be supplied to LSI.

4. GND electric potential

Set the voltage of GND terminal lowest at any operating condition. Make sure that each terminal voltage is not lower

than that of GND terminal at any time, even during transient condition.

5. Thermal design

Use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (Pd) in

actual operating conditions.

6. Short between pins and mounting errors

Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong

orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the

pins.

7. Operating the IC in the presence of strong electromagnetic field may cause malfunction, therefore, evaluate design

sufficiently.

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Part Numbering

－

BUS type

93：MicroWire

Operating temperature

/ Operating Voltage

-40℃ to +85℃/ 1.7V to 5.5V

Capacity

66=4K

Package

Blank :DIP-T8

:SOP8

:SOP-J8

:SSOP-B8

:TSSOP-B8

:TSSOP-B8J

:MSOP8

FVT

FVJ

FVM

NUX

:VSON008X2030

Process code

Pin assignment

Blank: Pin1~8: CS, SK, DI, DO, GND, ORG, DU, VCC respectively

: Pin1~8: CS, SK, DI, DO, GND, NC, DU, VCC respectively

: Pin1~8: DU, VCC, CS, SK, DI, DO, GND, NC respectively

Halogen free

Blank: Not Halogen free

As an exception, VSON008X2030

package will be Halogen free with “Blank”

100% Sn

Blank: 100% Sn

Packaging and forming specification

: Embossed tape and reel

(SOP8,SOP-J8, SSOP-B8,TSSOP-B8, TSSOP-B8J)

: Embossed tape and reel

(MSOP8, VSON008X2030)

Blank : Tube

(DIP-T8)

Package

Orderable Part Number

Remark

Type

Quantity

BR93G66

-3

DIP-T8

SOP8

Tube of 2000

Reel of 2500

Reel of 3000

Reel of 2500

Reel of 3000

Reel of 4000

Not Halogen free

Halogen free

100% Sn

BR93G66F

-3GTE2

-3GE2

-3GTE2

-3GTTR

-3TTR

100% Sn

BR93G66FJ

BR93G66FV

BR93G66FVT

BR93G66FVJ

BR93G66FVM

BR93G66NUX

SOP-J8

SSOP-B8

TSSOP-B8

TSSOP-B8J

MSOP8

VSON008X2030

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Physical Dimensions Tape and Reel Information

DIP-T8

9.3± 0.3

7.62

0.3± 0.1

0°−15°

2.54

0.5± 0.1

(Unit : mm)

Container

Quantity

Tube

2000pcs

Direction of feed Direction of products is fixed in a container tube

Order quantity needs to be multiple of the minimum quantity.

∗

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SOP8

5.0± 0.2

(MAX 5.35 include BURR)

−

4°

0.595

+0.1

0.17

0.05

0.1

1.27

0.42± 0.1

(Unit : mm)

Tape

Embossed carrier tape

Quantity

2500pcs

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

Direction of feed

1pin

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

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BR93G66-3

SOP-J8

4.9± 0.2

(MAX 5.25 include BURR)

6°

4°

−4°

0.545

0.2± 0.1

1.27

0.42± 0.1

0.1

(Unit : mm)

Tape

Embossed carrier tape

2500pcs

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

Direction of feed

1pin

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

www.rohm.com

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BR93G66-3

SSOP-B8

3.0± 0.2

(MAX 3.35 include BURR)

0.15± 0.1

0.1

+0.06

(0.52)

0.65

0.22

−0.04

0.08

(Unit : mm)

Tape

Embossed carrier tape

2500pcs

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

Direction of feed

1pin

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

www.rohm.com

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BR93G66-3

TSSOP-B8

3.0± 0.1

(MAX 3.35 include BURR)

4 ± ±4

1PIN MARK

+0.05

0.145

−0.03

0.525

0.08 S

+0.05

0.245

−0.04

0.08

0.65

(Unit : mm)

Tape

Embossed carrier tape

Quantity

3000pcs

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

Direction of feed

1pin

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

www.rohm.com

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BR93G66-3

TSSOP-B8J

3.0± 0.1

(MAX 3.35 include BURR)

4 ± ±4

1PIN MARK

+0.05

0.525

0.145

−0.03

0.08 S

+0.05

0.32

−0.04

0.08

0.65

(Unit : mm)

Tape

Embossed carrier tape

2500pcs

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

Direction of feed

1pin

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

www.rohm.com

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BR93G66-3

MSOP8

2.9± 0.1

(MAX 3.25 include BURR)

6°

4°

−4°

8 7 6 5

2 3 4

1PIN MARK

+0.05

−0.03

0.145

0.475

0.22

−0.04

0.08 S

0.65

(Unit : mm)

Tape

Embossed carrier tape

3000pcs

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper right when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

1pin

Direction of feed

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

www.rohm.com

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BR93G66-3

VSON008X2030

2.0± 0.1

1PIN MARK

0.08 S

1.5± 0.1

0.5

C0.25

0.25

+0.05

−0.04

0.25

(Unit : mm)

Tape

Embossed carrier tape

4000pcs

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper right when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

Direction of feed

1pin

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

www.rohm.com

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BR93G66-3

Marking Diagrams

SOP8(TOP VIEW)

DIP-T8 (TOP VIEW)

Part Number Marking

LOT Number

Part Number Marking

LOT Number

9 G 6 6

BR93G66

1PIN MARK

SOP-J8(TOP VIEW)

SSOP-B8(TOP VIEW)

Part Number Marking

LOT Number

Part Number Marking

LOT Number

9 G C

9 G 6 6

1PIN MARK

TSSOP-B8(TOP VIEW)

TSSOP-B8J(TOP VIEW)

Part Number Marking

LOT Number

Part Number Marking

9 G 6

6 G 3

LOT Number

1PIN MARK

MSOP8(TOP VIEW)

VSON008X2030 (TOP VIEW)

Part Number Marking

LOT Number

Part Number Marking

LOT Number

9 G C

9 G 3

9 G 6

6 G 3

1PIN MARK

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BR93G66-3

Revision History

Date

Revision

001

Changes

27.Aug.2012

New Release

Update some English words, sentences’ descriptions, grammar and formatting.

Delete “Status of this document” in page 25.

Delete “Lineup” after “Part numbering “ in page26.

Add Halogen free and 100% Sn information to page 26.

Add Part Number list to page 26.

27.Feb.2013

15.Jun.2016

002

003

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Notice

Precaution on using ROHM Products

1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,

OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you

intend to use our Products in devices requiring extremely high reliability (such as medical equipment ^{(Note 1)}, transport

equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car

accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or

serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.

Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any

damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific

Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

CHINA

CLASSⅢ

CLASSⅣ

CLASSⅡb

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are designed and manufactured for use under standard conditions and not under any special or

extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any

special or extraordinary environments or conditions. If you intend to use our Products under any special or

extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of

product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning

residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PGA-E

Rev.003

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign

trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the

Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM

will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to

manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice-PGA-E

Rev.003

Daattaasshheeeett

General Precaution

1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s

representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or

liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or

concerning such information.

Notice – WE

Rev.001

Datasheet

Buy

BR93G66-3 - Web Page

Distribution Inventory

Part Number

Package

BR93G66-3

DIP-T8

Unit Quantity

2000

Minimum Package Quantity

Packing Type

Constitution Materials List

RoHS

Tube

inquiry

Yes

型号:	BR93H46F-WE2
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
零件包装代码：	SOIC
包装说明：	LEAD FREE, SOP-8
针数：	8
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8542.32.00.51
风险等级：	5.56
Is Samacsys：	N
最大时钟频率 (fCLK)：	2 MHz
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3/e2
长度：	5 mm
内存密度：	1024 bit
内存集成电路类型：	EEPROM
内存宽度：	16
功能数量：	1
端子数量：	8
字数：	64 words
字数代码：	64
工作模式：	SYNCHRONOUS
最高工作温度：	125 °C
最低工作温度：	-40 °C
组织：	64X16
封装主体材料：	PLASTIC/EPOXY
封装代码：	LSOP
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, LOW PROFILE
并行/串行：	SERIAL
峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified
座面最大高度：	1.6 mm
串行总线类型：	MICROWIRE
最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	2.5 V
标称供电电压 (Vsup)：	4 V
表面贴装：	YES
技术：	CMOS
温度等级：	AUTOMOTIVE
端子面层：	TIN/TIN COPPER
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	10
宽度：	4.4 mm
最长写入周期时间 (tWC)：	5 ms
Base Number Matches：	1

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