BSZ0904NSIATMA1中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

BSZ0904NSI

OptiMOS^TMPower-MOSFET

Product Summary

Features

V_DS

30

4.0

40

12

17

V

• Optimized SyncFET for high performance buck converter

• Integrated monolithic Schottky-like diode

• Very low on-resistance R _DS(on)@ V _GS=4.5 V

• 100% avalanche tested

R_DS(on),max

I_D

mW

A

Q_OSS

nC

Q_G(0V..10V)

• Superior thermal resistance

PG-TSDSON-8 (fused leads)

• N-channel

• Qualified according to JEDEC¹⁾for target applications

• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

Marking

Package

BSZ0904NSI

PG-TSDSON-8 (fused leads)

0904NSI

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

V _GS=10 V, T _C=25 °C

Continuous drain current

40

A

V _GS=10 V, T _C=100 °C

V _GS=4.5 V, T _C=25 °C

V _GS=4.5 V,

T _C=100 °C

40

18

V _GS=10 V, T _A=25 °C,

R _thJA=60 K/W²⁾

Pulsed drain current³⁾

I _D,pulse

I _AS

T _C=25 °C

160

20

Avalanche current, single pulse⁴⁾

Avalanche energy, single pulse

Gate source voltage

T _C=25 °C

E _AS

V _GS

I _D=20 A, R _GS=25 W

20

mJ

V

±20

¹⁾J-STD20 and JESD22

²⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.2

page 1

2013-05-13

BSZ0904NSI

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

P _tot

T _C=25 °C

Power dissipation

37

W

T _A=25 °C,

R _thJA=60 K/W²⁾

2.1

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Thermal characteristics

R _thJC

Thermal resistance, junction - case

-

3.4

20

60

K/W

top

6 cm²cooling area²⁾

R _thJA

Device on PCB

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSSV _GS=0 V, I _D=10 mA

Drain-source breakdown voltage

30

-

V

dV _(BR)DSS

/dT _j

I _D=10 mA, referenced

to 25 °C

Breakdown voltage temperature

coefficient

15

mV/K

V _GS(th)V _DS=V _GS, I _D=250 µA

Gate threshold voltage

1.2

-

2

V

I _DSS

V _DS=24 V, V _GS=0 V

Zero gate voltage drain current

0.5

mA

V _DS=24 V, V _GS=0 V,

T _j=125 °C

-

1

-

I _GSS

V _GS=20 V, V _DS=0 V

Gate-source leakage current

-

10

4.6

3.3

0.9

100 nA

R _DS(on)V _GS=4.5 V, I _D=30 A

V _GS=10 V, I _D=30 A

R _G

Drain-source on-state resistance

5.7

4.0

1.8

mW

-

Gate resistance

0.5

W

|V _DS|>2|I _D|R _DS(on)max

I _D=30 A

,

g _fs

Transconductance

41

82

-

S

³⁾See figure 3 for more detailed information

Rev. 2.2

page 2

2013-05-13

BSZ0904NSI

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Dynamic characteristics

C _iss

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

-

1100

460

64

1463 pF

V _GS=0 V, V _DS=15 V,

f =1 MHz

C _oss

C_rss

t _d(on)

t _r

612

-

3.3

4.4

16

-

ns

V _DD=15 V, V _GS=10 V,

I _D=30 A, R _G,ext=1.6 W

t _d(off)

t _f

Turn-off delay time

Fall time

3.0

Gate Charge Characteristics⁵⁾

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

Q _gs

-

2.9

1.7

2.9

4.1

8.5

2.7

3.9

-

nC

Q _g(th)

Q _gd

3.8

-

V _DD=15 V, I _D=30 A,

V _GS=0 to 4.5 V

Q _sw

Q _g

Gate charge total

11

-

V _plateau

Gate plateau voltage

V

V _DD=15 V, I _D=30 A,

V _GS=0 to 10 V

Q _g

Gate charge total

-

17

23

nC

V _DS=0.1 V,

V _GS=0 to 4.5 V

Q _g(sync)

Gate charge total, sync. FET

Output charge

-

6.8

12

-

Q _oss

V _DD=15 V, V _GS=0 V

16

Reverse Diode

I _S

Diode continuous forward current

Diode pulse current

-

37

A

T _C=25 °C

I _S,pulse

160

V _GS=0 V, I _F=3 A,

T _j=25 °C

V _SD

Diode forward voltage

-

0.56

2

0.7

-

V

V _R=15 V, I _F=I _S,

di _F/dt =400 A/µs

Q _rr

Reverse recovery charge

nC

⁴⁾See figure 13 for more detailed information

⁵⁾See figure 16 for gate charge parameter definition

Rev. 2.2

page 3

2013-05-13

BSZ0904NSI

1 Power dissipation

2 Drain current

P _tot=f(T _C)

I _D=f(T _C); V _GS≥10 V

50

40

30

20

10

40

30

20

10

0

40

80

120

160

0

40

80

120

160

T_C[°C]

3 Safe operating area

I _D=f(V _DS); T _C=25 °C; D =0

parameter: t _p

4 Max. transient thermal impedance

Z _thJC=f(t _p)

parameter: D =t _p/T

10³

10¹

limited by on-state

resistance

1 µs

10²

10¹

10⁰

10^-1

0.5

10 µs

10⁰

0.2

100 µs

0.1

1 ms

0.05

10 ms

DC

0.02

10^-1

0.01

single pulse

10^-2

10^-1

10⁰

10¹

10²

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DS[V]

t_p[s]

Rev. 2.2

page 4

2013-05-13

BSZ0904NSI

5 Typ. output characteristics

I _D=f(V _DS); T _j=25 °C

6 Typ. drain-source on resistance

R _DS(on)=f(I _D); T _j=25 °C

parameter: V _GS

160

10

5 V

10 V

140

4.5 V

8

120

100

80

60

40

20

0

3.2 V

6

3.5 V

4 V

3.2 V

4.5 V

5 V

4

7 V

8 V

10 V

3 V

2.8 V

2

0

1

2

3

0

10

20

30

40

50

V_DS[V]

I_D[A]

7 Typ. transfer characteristics

I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max

parameter: T _j

8 Typ. forward transconductance

g _fs=f(I _D); T _j=25 °C

160

140

120

100

80

200

160

120

80

60

40

150 °C

20

25 °C

0

1

2

3

4

5

0

40

80

120

160

V_GS[V]

I_D[A]

Rev. 2.2

page 5

2013-05-13

BSZ0904NSI

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R _DS(on)=f(T _j); I _D=30 A; V _GS=10 V

V _GS(th)=f(T _j); V _GS=V _DS; I _D=10 mA

6

5

2.5

2

4

1.5

1

typ

3

2

1

0

0.5

0

-60

-20

20

60

100

140

180

-60

-20

20

60

100

140

180

T_j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _F=f(V _SD

C =f(V _DS); V _GS=0 V; f =1 MHz

)

parameter: T _j

10⁴

10³

10²

10¹

10⁰

Ciss

10³

10²

10¹

25 °C

125 °C

Coss

150 °C

-55 °C

Crss

10^-1

0

10

20

30

0.2

0.4

0.6

0.8

1

1.2

V_DS[V]

V_SD[V]

Rev. 2.2

page 6

2013-05-13

BSZ0904NSI

13 Avalanche characteristics

14 Typ. gate charge

V _GS=f(Q _gate); I _D=30 A pulsed

parameter: V _DD

I _AS=f(t _AV); R _GS=25 W

parameter: T _j(start)

100

12

10

8

15 V

6 V

24 V

25 °C

10

100 °C

125 °C

6

1

4

2

0.1

0

1

10

100

1000

0

5

10

15

20

t_AV[µs]

Q_gate[nC]

15 Typ. drain-source leakage current

I _DSS=f(V _DS); V _GS=0 V

16 Gate charge waveforms

parameter: T _j

10^-2

V _GS

Q_g

10^-3

125 °C

10^-4

100 °C

75 °C

V _gs(th)

10^-5

10^-6

25 °C

Q_g(th)

Q_sw

Q_gd

Q_gate

10^-7^-7

10

Q_gs

0

5

10

15

20

25

V_DS[V]

Rev. 2.2

page 7

2013-05-13

BSZ0904NSI

Package Outline

PG-TSDSON-8 (fused leads)

PG-TSDSON-8 (fused leads): Outline

Rev. 2.2

page 8

2013-05-13

BSZ0904NSI

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Rev. 2.2

page 9

2013-05-13

型号:	BSZ0904NSIATMA1
是否无铅：	含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-N3
针数：	8
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
Factory Lead Time：	10 weeks 5 days
风险等级：	1.65
雪崩能效等级（Eas）：	20 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	40 A
最大漏极电流 (ID)：	18 A
最大漏源导通电阻：	0.0057 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-N3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	37 W
最大脉冲漏极电流 (IDM)：	160 A
子类别：	FET General Purpose Powers
表面贴装：	YES
端子面层：	Tin (Sn)
端子形式：	NO LEAD
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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