BSZ0906NS应用文章市场行情现货热卖使用介绍供应商报价-中国IC网-芯三七

BSZ0909LS

MOSFET

OptiMOS^TMꢀ5ꢀPower-MOSFET,ꢀ30ꢀV

TSDSON-8ꢀFL

(enlarged source interconnection)

Features

•ꢀOptimizedꢀforꢀchargersꢀandꢀadaptersꢀ(e.g.ꢀUSB-PD,ꢀwirelessꢀchargingꢀ)

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)ꢀ@ꢀV_GS=4.5ꢀV

•ꢀSuperiorꢀthermalꢀresistance

•ꢀN-channel

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard

S 1

S 2

S 3

G 4

8 D

7 D

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

6 D

5 D

V_DS

30

V

R_DS(on),max,ꢀV_GS=10V

3.0

mΩ

A

R_DS(on),max,ꢀV_GS=4.5V 3.5

I_D

40

Typeꢀ/ꢀOrderingꢀCode

Package

PG-TSDSON-8 FL

Marking

RelatedꢀLinks

BSZ0909LS

0909LS

-

Final Data Sheet

1

Rev.ꢀ2.0,ꢀꢀ2020-05-11

OptiMOS^TMꢀ5ꢀPower-MOSFET,ꢀ30ꢀV

BSZ0909LS

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Final Data Sheet

2

Rev.ꢀ2.0,ꢀꢀ2020-05-11

OptiMOS^TMꢀ5ꢀPower-MOSFET,ꢀ30ꢀV

BSZ0909LS

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_j=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

-

40

19

V_GS=10ꢀV,ꢀT_C=25ꢀ°C

V_GS=10ꢀV,ꢀT_C=100ꢀ°C

V_GS=4.5ꢀV,ꢀT_C=25ꢀ°C

V_GS=4.5ꢀV,ꢀT_C=100ꢀ°C

V_GS=4.5ꢀV,ꢀT_A=25ꢀ°C,ꢀR_thJA=60ꢀK/W

Continuous drain current

I_D

A

Pulsed drain current¹⁾

I_D,pulse

I_AS

-

160

20

A

T_C=25ꢀ°C

Avalanche current, single pulse²⁾

Avalanche energy, single pulse

Gate source voltage

-

A

T_C=25ꢀ°C

E_AS

V_GS

-

70

mJ

V

I_D=20ꢀA,ꢀR_GS=25ꢀΩ

-20

20

-

IEC climatic category;

DIN IEC 68-1: 55/150/56

Operating and storage temperature

T_j,ꢀT_stg

-55

-

150

°C

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Typ.

-

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Thermal resistance, junction - case

R_thJC

R_thJA

-

2.6

K/W

-

Device on PCB,

-

60

6 cm²cooling area³⁾

¹⁾See Diagram 3 for more detailed information

²⁾See Diagram 13 for more detailed information

³⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical in still air.

Final Data Sheet

3

Rev.ꢀ2.0,ꢀꢀ2020-05-11

OptiMOS^TMꢀ5ꢀPower-MOSFET,ꢀ30ꢀV

BSZ0909LS

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

30

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_GS(th)

-

V

V_GS=0ꢀV,ꢀI_D=1ꢀmA

1.2

2

V_DS=V_GS,ꢀI_D=250ꢀµA

-

0.1

10

1

100

V_DS=30ꢀV,ꢀV_GS=0ꢀV,ꢀT_j=25ꢀ°C

V_DS=30ꢀV,ꢀV_GS=0ꢀV,ꢀT_j=125ꢀ°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

I_DSS

µA

nA

I_GSS

-

10

100

V_GS=20ꢀV,ꢀV_DS=0ꢀV

-

2.8

2.3

3.5

3.0

V_GS=4.5ꢀV,ꢀI_D=20ꢀA

V_GS=10ꢀV,ꢀI_D=20ꢀA

R_DS(on)

mΩ

Gate resistance

R_G

g_fs

-

0.9

-

Ω

-

Transconductance

55

110

S

|V_DS|>2|I_D|R_DS(on)max,ꢀI_D=30ꢀA

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

1700

600

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance

C_iss

C_oss

C_rss

-

pF

V_GS=0ꢀV,ꢀV_DS=15ꢀV,ꢀf=1ꢀMHz

Output capacitance

Reverse transfer capacitance

88

V_DD=15ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=30ꢀA,

R_G,ext=1.6ꢀΩ

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

4.2

5.2

21

-

ns

V_DD=15ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=30ꢀA,

R_G,ext=1.6ꢀΩ

V_DD=15ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=30ꢀA,

R_G,ext=1.6ꢀΩ

Turn-off delay time

Fall time

V_DD=15ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=30ꢀA,

R_G,ext=1.6ꢀΩ

3.6

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics¹⁾ꢀ

Values

Typ.

4.4

2.7

4.0

5.6

13

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

Q_gs

-

nC

V

V_DD=15ꢀV,ꢀI_D=30ꢀA,ꢀV_GS=0ꢀtoꢀ4.5ꢀV

V_DD=15ꢀV,ꢀI_D=30ꢀA,ꢀV_GS=0ꢀtoꢀ10ꢀV

V_DS=0.1ꢀV,ꢀV_GS=0ꢀtoꢀ4.5ꢀV

Q_g(th)

Q_gd

Q_sw

Gate charge total

Q_g

Gate plateau voltage

Gate charge total

V_plateau

Q_g

2.6

26

nC

Gate charge total, sync. FET

Output charge

Q_g(sync)

Q_oss

11

16

V_DD=15ꢀV,ꢀV_GS=0ꢀV

¹⁾See ″Gate charge waveforms″ for parameter definition

Final Data Sheet

4

Rev.ꢀ2.0,ꢀꢀ2020-05-11

OptiMOS^TMꢀ5ꢀPower-MOSFET,ꢀ30ꢀV

BSZ0909LS

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

-

Max.

40

160

1

Diode continuous forward current

Diode pulse current

I_S

-

A

T_C=25ꢀ°C

I_S,pulse

V_SD

Q_rr

-

A

T_C=25ꢀ°C

Diode forward voltage

0.83

15

V

V_GS=0ꢀV,ꢀI_F=20ꢀA,ꢀT_j=25ꢀ°C

V_R=15ꢀV,ꢀI_F=I_S,ꢀdi_F/dt=400ꢀA/µs

Reverse recovery charge

-

nC

Final Data Sheet

5

Rev.ꢀ2.0,ꢀꢀ2020-05-11

OptiMOS^TMꢀ5ꢀPower-MOSFET,ꢀ30ꢀV

BSZ0909LS

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀDrainꢀcurrent

50

45

40

35

30

25

20

15

10

5

10 V

4.5 V

40

30

20

10

0

40

80

120

160

0

40

80

120

160

T_Cꢀ[°C]

P_tot=f(T_C)

I_D=f(T_C);ꢀparameter:ꢀV_GS

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10³

10¹

1 µs

10 µs

10²

10¹

10⁰

10^-1

0.5

10⁰

100 µs

0.2

0.1

1 ms

0.05

10^-1

0.02

10 ms

0.01

DC

single pulse

10^-2

10^-1

10⁰

10¹

10²

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJC=f(t_p);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

6

Rev.ꢀ2.0,ꢀꢀ2020-05-11

OptiMOS^TMꢀ5ꢀPower-MOSFET,ꢀ30ꢀV

BSZ0909LS

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance

160

6

5 V

4.5 V

10 V

140

5

120

100

80

60

40

20

0

3.2 V

4

3.5 V

4 V

3 V

3

4.5 V

5 V

7 V

8 V

10 V

2

1

0

2.8 V

0

1

2

3

0

10

20

30

40

50

V_DSꢀ[V]

I_Dꢀ[A]

I_D=f(V_DS);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(I_D);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance

160

210

140

120

100

80

180

150

120

90

60

40

150 °C

30

20

25 °C

0

1

2

3

4

5

0

40

80

120

160

V_GSꢀ[V]

I_Dꢀ[A]

I_D=f(V_GS);ꢀ|V_DS|>2|I_D|R_DS(on)max;ꢀparameter:ꢀT_j

g_fs=f(I_D);ꢀT_j=25ꢀ°C

Final Data Sheet

7

Rev.ꢀ2.0,ꢀꢀ2020-05-11

OptiMOS^TMꢀ5ꢀPower-MOSFET,ꢀ30ꢀV

BSZ0909LS

Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance

Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage

4

2.5

2.0

1.5

1.0

0.5

0.0

3

typ

2

1

0

-60

-20

20

60

100

140

180

-60

-20

20

60

100

140

180

T_jꢀ[°C]

R_DS(on)=f(T_j);ꢀI_D=20ꢀA;ꢀV_GS=10ꢀV

V_GS(th)=f(T_j);ꢀV_GS=V_DS;ꢀI_D=250ꢀµA

Diagramꢀ11:ꢀTyp.ꢀcapacitances

Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

10⁴

10³

25 °C

150 °C

Ciss

10³

10²

10¹

10²

10¹

10⁰

Coss

Crss

0

5

10

15

20

25

30

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_DSꢀ[V]

V_SDꢀ[V]

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=1ꢀMHz

I_F=f(V_SD);ꢀparameter:ꢀT_j

Final Data Sheet

8

Rev.ꢀ2.0,ꢀꢀ2020-05-11

OptiMOS^TMꢀ5ꢀPower-MOSFET,ꢀ30ꢀV

BSZ0909LS

Diagramꢀ13:ꢀAvalancheꢀcharacteristics

Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge

10²

12

15 V

10

8

6 V

24 V

25 °C

10¹

6

100 °C

125 °C

4

2

10⁰

0

10⁰

10¹

10²

10³

0

10

20

30

t_AVꢀ[µs]

Q_gateꢀ[nC]

I_AS=f(t_AV);ꢀR_GS=25ꢀΩ;ꢀparameter:ꢀT_j(start)

V_GS=f(Q_gate);ꢀI_D=30ꢀAꢀpulsed;ꢀparameter:ꢀV_DD

Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage

Diagram Gate charge waveforms

34

32

30

28

26

24

22

20

-60

-20

20

60

100

140

180

T_jꢀ[°C]

V_BR(DSS)=f(T_j);ꢀI_D=1ꢀmA

Final Data Sheet

9

Rev.ꢀ2.0,ꢀꢀ2020-05-11

OptiMOS^TMꢀ5ꢀPower-MOSFET,ꢀ30ꢀV

BSZ0909LS

5ꢀꢀꢀꢀꢀPackageꢀOutlines

TSDSON-8-25/-26

m

j

MILLIMETERS

DIM

INCHES

MIN

0.90

0.24

0.10

0.24

3.20

2.19

1.54

0.21

3.20

2.01

0.10

MAX

1.10

0.44

0.30

0.44

3.40

2.39

1.74

0.41

3.40

2.21

0.30

MIN

MAX

0.043

0.017

0.012

0.017

0.134

0.094

0.069

0.016

0.134

0.087

0.012

A

b

0.035

0.009

0.004

0.009

0.126

0.086

0.061

0.008

0.126

0.079

0.004

b1

b2

D=D1

D2

D3

D4

E

DOCUMENT NO.

Z8B00158553

0

E4

E6

e

SCALE

0.65 (BSC)

0.026 (BSC)

8

2.5

N

8

0

2.5

L

0.30

0.40

0.50

0.51

0.70

0.012

0.016

0.020

L1

L2

aaa

F1

F2

F3

F4

F5

F6

F7

F8

F9

0.028

5mm

0.25

3.90

2.29

0.31

0.34

0.80

1.00

2.51

1.64

0.50

0.010

0.154

0.090

0.012

0.013

0.031

0.039

0.099

0.065

0.020

EUROPEAN PROJECTION

ISSUE DATE

27-12-2010

REVISION

02

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm/inches

Final Data Sheet

10

Rev.ꢀ2.0,ꢀꢀ2020-05-11

OptiMOS^TMꢀ5ꢀPower-MOSFET,ꢀ30ꢀV

BSZ0909LS

RevisionꢀHistory

BSZ0909LS

Revision:ꢀ2020-05-11,ꢀRev.ꢀ2.0

Previous Revision

Revision Date

Subjects (major changes since last revision)

Release of final version

2.0

2020-05-11

Trademarks

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pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.

TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or

automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa

failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand

aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare

intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis

reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.

Final Data Sheet

11

Rev.ꢀ2.0,ꢀꢀ2020-05-11

型号:	BSZ0909LS
是否Rohs认证：	符合
生命周期：	Active
Reach Compliance Code：	unknown
Base Number Matches：	1

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