BSH101芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号BSH101的概述

芯片BSH101的概述 BSH101是一种功能强大的双向可控硅（Triac），广泛应用于电力控制、电机控制以及其他能量管理的领域。作为一个半导体器件，BSH101能够实现对较大负载的开关和调节，因而在家用电器、工业控制系统及暖通空调（HVAC）系统中具有重要的应用价值。 BSH101的设计考虑了高功率、高效率与低功耗等方面，其独特的特性使其成为现代电力电子设备中的一个关键组成部分。通过其精巧的封装设计与可靠的性能，BSH101确保了更大的功率处理能力和保护功能，能够有效地满足多种应用需求。芯片BSH101的详细参数 BSH101的技术参数围绕其工作电压、电流及功率等几个核心指标进行设计。具体参数如下： - 额定电压（V_RRM）: 600V - 额定电流（I_T(RMS)）: 16A - 门极触发电流（I_GT）: 20 mA - 门极触发电压（V_GT）: 1.5V - 封装类型:...

产品型号BSH101的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS

DATA SHEET

andbook, halfpage

M3D088

BSH101

N-channel enhancement mode

MOS transistor

2000 Jul 19

Product speciÞcation

Supersedes data of 1997 Nov 28

File under Discrete Semiconductors, SC13b

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

FEATURES

PINNING - SOT23

• Very low threshold

SYMBOL

DESCRIPTION

• High-speed switching

gate

• No secondary breakdown

• Direct interface to C-MOS, TTL etc.

source

drain

APPLICATIONS

• Power management

handbook, halfpage

• DC to DC converters

• Battery powered applications

• 'Glue-logic'; interface between logic blocks and/or

periphery

• General purpose switch.

DESCRIPTION

Top view

MAM273

N-channel enhancement mode MOS transistor in a SOT23

SMD package.

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

SYMBOL

V_DS

PARAMETERS

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

source-drain diode forward voltage

gate-source voltage (DC)

gate-source threshold voltage

drain current (DC)

−

Ω

V_SD

V_GS

V_GSth

I_D

V_GD= 0; I_S= 0.5 A

±20

−

V_DS= V_GS; I_D= 1 mA

T_s= 80 °C

0.7

0.81

0.5

R_DSon

P_tot

drain-source on-state resistance

total power dissipation

V_GS= 10 V; I_D= 0.35 A

T_s= 80 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2000 Jul 19

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

drain-source voltage (DC)

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_GS

I_D

−

gate-source voltage (DC)

drain current (DC)

±20

0.7

T_s= 80 °C; note 1

note 2

I_DM

P_tot

peak drain current

2.8

total power dissipation

T_s= 80 °C

0.5

°C

_amb= 25 °C; note 3

_amb= 25 °C; note 4

0.75

0.54

+150

T_stg

T_j

storage temperature

−55

operating junction temperature

Source-drain diode

I_S

source current (DC)

peak pulsed source current

T_s= 80 °C

−

0.5

I_SM

note 2

Notes

1. T_sis the temperature at the soldering point of the drain lead.

2. Pulse width and duty cycle limited by maximum junction temperature.

3. Device mounted on printed-circuit board with an R_{th a-tp}(ambient to tie-point) of 27.5 K/W.

4. Device mounted on printed-circuit board with an R_{th a-tp}(ambient to tie-point) of 90 K/W.

MGM190

MGM191

0.6

handbook, halfpage

tot

(A)

(W)

0.4

(1)

−1

0.2

−2

−3

−1

120

160

(V)

(°C)

δ = 0.01; T_s= 80 °C.

(1) R_DSonlimitation.

Fig.2 Power derating curve.

Fig.3 SOAR.

2000 Jul 19

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

thermal resistance from junction to soldering point

VALUE

UNIT

R_{th j-s}

140

K/W

MGM192

handbook, full pagewidth

th j-s

(K/W)

(1)

(2)

(3)

(4)

(5)

(6)

(7)

δ =

(8)

(9)

(10)

−6

−5

−4

−3

−2

−1

(s)

(1) δ = 1.

(2) δ = 0.75.

(7) δ = 0.05.

(3) δ = 0.5.

(4) δ = 0.33.

(9) δ = 0.01.

(5) δ = 0.2.

(10) δ = 0.

(6) δ = 0.1.

(8) δ = 0.02.

Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.

2000 Jul 19

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

CHARACTERISTICS

T_j= 25 °C unless otherwise speciÞed.

SYMBOL

PARAMETER

CONDITIONS

V_GS= 0; I_D= 10 µA

MIN.

TYP. MAX. UNIT

V_(BR)DSSdrain-source breakdown voltage

−

V_GSth

I_DSS

gate-source threshold voltage

drain-source leakage current

gate leakage current

V_GS= V_DS; I_D= 1 mA

V_GS= 0; V_DS= 48 V

V_GS= ±20 V; V_DS= 0

V_GS= 10 V; I_D= 0.35 A

−

100

±100

0.81

0.93

−

Ω

I_GSS

−

R_DSon

drain-source on-state resistance

−

V_GS= 4.5 V; I_D= 0.175 A

−

Ω

C_iss

C_oss

C_rss

Q_G

input capacitance

V_GS= 0; V_DS= 48 V; f = 1 MHz

72.2

11.3

3.6

2130

output capacitance

reverse transfer capacitance

total gate charge

−

V_GS= 10 V; V_DD= 30 V;

−

I_D= 0.35 A; T_amb= 25 °C

Q_GS

Q_GD

gate-source charge

gate-drain charge

V_DD= 30 V; I_D= 0.35 A;

T_amb= 25 °C

−

150

695

−

V_DD= 30 V; I_D= 0.35 A;

T_amb= 25 °C

Switching times

t_d(on)turn-on delay time

V_GS= 0 to 10 V; V_DD= 30 V;

I_D= 0.35 A; R_gen= 6 Ω

−

3.5

−

t_f

fall time

V_GS= 0 to 10 V; V_DD= 30 V;

I_D= 0.35 A; R_gen= 6 Ω

t_on

turn-on switching time

turn-off delay time

rise time

V_GS= 0 to 10 V; V_DD= 30 V;

I_D= 0.35 A; R_gen= 6 Ω

t_d(off)

t_r

V_GS= 10 to 0 V; V_DD= 30 V;

I_D= 0.35 A; R_gen= 6 Ω

V_GS= 10 to 0 V; V_DD= 30 V;

I_D= 0.35 A; R_gen= 6 Ω

4.5

13.5

t_off

turn-off switching time

V_GS= 10 to 0 V; V_DD= 30 V;

I_D= 0.35 A; R_gen= 6 Ω

Source-drain diode

V_SDsource-drain diode forward

V_GD= 0; I_S= 0.5 A

−

voltage

t_rr

reverse recovery time

I_S= 0.5 A; di/dt = −10 A/µs

−

2000 Jul 19

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

handbook, full pagewidth

90 %

10 %

out

90 %

out

10 %

d(on)

d(off)

MAM274

off

Fig.5 Switching times test circuit with input and output waveforms.

MGM194

MGM196

handbook, halfp(1a)g(e2) (3)(4)

(5)

handbook, halfpage

(V)

(A)

(6)

(7)

(1)

(2)

(8)

(9)

(V)

(pC)

(5) V_GS= 5 V.

T_amb= 25 °C; t_p= 300 µs; δ = 0.

(1) V_GS= 10 V.

(6) V_GS= 4.5 V.

(7) V_GS= 4 V.

(8) V_GS= 3.5 V.

(9) V_GS= 3 V.

V_DD= 30 V; I_D= 0.35 A; T_amb= 25 °C.

(1) V_DS

(2) V_GS.

(2) V_GS= 8 V.

(3) V_GS= 6 V.

(4) V_GS= 5.5 V.

Fig.6 Gate-source and drain-source voltages as

functions of total gate charge; typical values.

Fig.7 Output characteristics; typical values.

2000 Jul 19

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

MGM195

MGM193

160

handbook, halfpage

(pF)

(A)

120

iss

oss

rss

(V)

V_GS= 0; f = 1 MHz; T_amb= 25 °C.

V_DS= 10 V; T_amb= 25 °C; t_p= 300 µs; δ = 0.

Fig.9 Capacitance as a function of drain-source

voltage; typical values.

Fig.8 Transfer characteristic; typical values.

MGM198

handbook, halfpage

MGM197

handbook, halfpage

DSon

(Ω)

(A)

1.6

(1)(2) (3)(4)

(5) (6)

1.2

0.8

(1)

(2) (3)

0.4

−1

(V)

0.4

0.8

1.2

(V)

T_amb= 25 °C; t_p= 300 µs; δ = 0.

(1) I_D= 175 mA.

(4) I_D= 1 A.

(5) I_D= 1.4 A.

(6) I_D= 2.8 A.

V_GD= 0.

(2) I_D= 350 mA.

(1) T_amb= 150 °C.

(2) T_amb= 25 °C.

(3) T_amb= −65 °C.

(3) I_D= 700 mA.

Fig.11 Drain-source on-state resistance as a

function of gate-source voltage; typical

values.

Fig.10 Source current as a function of source-drain

diode forward voltage; typical values.

2000 Jul 19

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

MGM199

MGM200

1.2

2.0

handbook, halfpage

(1)

(2)

1.6

0.8

1.2

0.8

(1)

0.4

(2)

0.4

−65

−15

135

185

T (°C)

−15

135

185

T (°C)

R_DSonat T_j

k =

-----------------------------------------

R_DSonat 25 °C

V_GSthat T_j

k =

--------------------------------------

V_GSthat 25°C

(1) R_DSonat V_GS= 10 V; I_D= 350 mA.

(2) R_DSonat V_GS= 4.5 V; I_D= 170 mA.

V_GSthat V_DS= V_GS; I_D= 1 mA.

Fig.12 Temperature coefficient of gate-source

threshold voltage as a function of junction

temperature; typical values.

Fig.13 Temperature coefficient of drain-source

on-resistance as a function of junction

temperature; typical values.

2000 Jul 19

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT23

w M

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

0.1

1.9

0.95

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

SOT23

2000 Jul 19

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

DEFINITIONS

Data Sheet Status

Objective specification

Preliminary specification

Product specification

This data sheet contains target or goal specifications for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the specification

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

2000 Jul 19

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

NOTES

2000 Jul 19

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SCA56

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Printed in The Netherlands

137107/00/02/pp12

Date of release: 1997 Nov 28

Document order number: 9397 750 02963