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    产品型号BTA212X800F的Datasheet PDF文件预览

    Philips Semiconductors  
    Product specification  
    Three quadrant triacs  
    guaranteed commutation  
    BTA212X series D, E and F  
    GENERAL DESCRIPTION  
    QUICK REFERENCE DATA  
    Passivated guaranteed commutation  
    triacs in a full pack, plastic envelope  
    intended for use in motor control circuits  
    or with other highly inductive loads.  
    SYMBOL  
    PARAMETER  
    MAX. MAX. UNIT  
    BTA212X-  
    BTA212X-  
    BTA212X-  
    600D  
    -
    600E 800E  
    600F 800F  
    These  
    devices  
    balance  
    the  
    requirements  
    of  
    commutation  
    VDRM  
    Repetitive peak off-state  
    voltages  
    RMS on-state current  
    Non-repetitive peak on-state  
    current  
    600  
    800  
    V
    performance and gate sensitivity. The  
    "sensitive gate" E series and "logic level"  
    D series are intended for interfacing with  
    low power drivers, including micro  
    controllers.  
    IT(RMS)  
    ITSM  
    12  
    95  
    12  
    95  
    A
    A
    PINNING - SOT186A  
    PIN CONFIGURATION  
    SYMBOL  
    PIN  
    1
    DESCRIPTION  
    main terminal 1  
    case  
    T2  
    T1  
    2
    main terminal 2  
    gate  
    3
    G
    1
    2 3  
    case isolated  
    LIMITING VALUES  
    Limiting values in accordance with the Absolute Maximum System (IEC 134).  
    SYMBOL PARAMETER  
    CONDITIONS  
    MIN.  
    MAX.  
    UNIT  
    V
    -600  
    6001  
    -800  
    800  
    VDRM  
    Repetitive peak off-state  
    voltages  
    -
    -
    IT(RMS)  
    ITSM  
    RMS on-state current  
    full sine wave;  
    12  
    A
    Ths ≤ 56 ˚C  
    Non-repetitive peak  
    on-state current  
    full sine wave;  
    Tj = 25 ˚C prior to  
    surge  
    t = 20 ms  
    -
    -
    -
    95  
    105  
    45  
    A
    A
    t = 16.7 ms  
    I2t  
    I2t for fusing  
    Repetitive rate of rise of  
    on-state current after  
    triggering  
    Peak gate current  
    Peak gate voltage  
    Peak gate power  
    Average gate power  
    t = 10 ms  
    A2s  
    A/µs  
    dIT/dt  
    ITM = 20 A; IG = 0.2 A;  
    dIG/dt = 0.2 A/µs  
    100  
    IGM  
    -
    -
    -
    -
    2
    5
    5
    A
    V
    W
    W
    VGM  
    PGM  
    PG(AV)  
    over any 20 ms  
    period  
    0.5  
    Tstg  
    Tj  
    Storage temperature  
    Operating junction  
    temperature  
    -40  
    -
    150  
    125  
    ˚C  
    ˚C  
    1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
    switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
    February 2000  
    1
    Rev 1.000  
    Philips Semiconductors  
    Product specification  
    Three quadrant triacs  
    guaranteed commutation  
    BTA212X series D, E and F  
    ISOLATION LIMITING VALUE & CHARACTERISTIC  
    Ths = 25 ˚C unless otherwise specified  
    SYMBOL PARAMETER  
    CONDITIONS  
    MIN. TYP. MAX. UNIT  
    Visol  
    Cisol  
    R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal  
    -
    -
    2500  
    V
    three terminals to external  
    heatsink  
    waveform;  
    R.H. ≤ 65% ; clean and dustfree  
    Capacitance from T2 to external f = 1 MHz  
    heatsink  
    -
    10  
    -
    pF  
    THERMAL RESISTANCES  
    SYMBOL PARAMETER  
    CONDITIONS  
    MIN. TYP. MAX. UNIT  
    Rth j-hs  
    Rth j-a  
    Thermal resistance  
    junction to heatsink  
    full or half cycle  
    with heatsink compound  
    without heatsink compound  
    in free air  
    -
    -
    -
    -
    -
    55  
    4.0  
    5.5  
    -
    K/W  
    K/W  
    K/W  
    Thermal resistance  
    junction to ambient  
    STATIC CHARACTERISTICS  
    Tj = 25 ˚C unless otherwise stated  
    SYMBOL PARAMETER  
    CONDITIONS  
    BTA212X-  
    MIN. TYP.  
    ...D  
    MAX.  
    ...E  
    UNIT  
    ...D  
    ...F  
    IGT  
    Gate trigger current2  
    Latching current  
    VD = 12 V; IT = 0.1 A  
    T2+ G+  
    -
    -
    -
    1.0  
    2.2  
    3.3  
    5
    5
    5
    10  
    10  
    10  
    25  
    25  
    25  
    mA  
    mA  
    mA  
    T2+ G-  
    T2- G-  
    IL  
    VD = 12 V; IGT = 0.1 A  
    T2+ G+  
    -
    -
    -
    6
    6
    9
    15  
    25  
    25  
    25  
    30  
    30  
    30  
    40  
    40  
    mA  
    mA  
    mA  
    T2+ G-  
    T2- G-  
    IH  
    Holding current  
    VD = 12 V; IGT = 0.1 A  
    -
    3.8  
    15  
    25  
    30  
    mA  
    ...D, E, F  
    VT  
    On-state voltage  
    IT = 17 A  
    -
    -
    1.3  
    0.7  
    0.4  
    1.6  
    1.5  
    -
    V
    V
    V
    VGT  
    Gate trigger voltage  
    VD = 12 V; IT = 0.1 A  
    VD = 400 V; IT = 0.1 A;  
    Tj = 125 ˚C  
    0.25  
    ID  
    Off-state leakage current VD = VDRM(max)  
    ;
    -
    0.1  
    0.5  
    mA  
    Tj = 125 ˚C  
    2 Device does not trigger in the T2-, G+ quadrant.  
    February 2000  
    2
    Rev 1.000  
    Philips Semiconductors  
    Product specification  
    Three quadrant triacs  
    guaranteed commutation  
    BTA212X series D, E and F  
    DYNAMIC CHARACTERISTICS  
    Tj = 25 ˚C unless otherwise stated  
    SYMBOL PARAMETER  
    CONDITIONS  
    BTA212X- ...D  
    VDM = 67% VDRM(max) 20  
    Tj = 110 ˚C; exponential  
    waveform; gate open  
    circuit  
    VDM = 400 V; Tj = 110 ˚C; 1.8  
    IT(RMS) = 12 A;  
    MIN.  
    ...E  
    60  
    TYP. MAX. UNIT  
    ...D  
    ...F  
    dVD/dt  
    dIcom/dt  
    dIcom/dt  
    Critical rate of rise of  
    off-state voltage  
    ;
    70  
    30  
    -
    -
    -
    V/µs  
    A/ms  
    A/ms  
    Critical rate of change of  
    commutating current  
    3.5  
    16  
    5
    3
    dVcom/dt = 20V/µs; gate  
    open circuit  
    Critical rate of change of  
    commutating current  
    VDM = 400 V; Tj = 110 ˚C;  
    IT(RMS) = 12 A;  
    5
    19  
    100  
    dVcom/dt = 0.1V/µs; gate  
    open circuit  
    ...D, E, F  
    tgt  
    Gate controlled turn-on  
    time  
    ITM = 12 A; VD = VDRM(max)  
    ;
    -
    -
    -
    2
    -
    µs  
    IG = 0.1 A; dIG/dt = 5 A/µs  
    February 2000  
    3
    Rev 1.000  
    Philips Semiconductors  
    Product specification  
    Three quadrant triacs  
    guaranteed commutation  
    BTA212X series D, E and F  
    Ths(max) / C  
    Ptot / W  
    20  
    56 C  
    IT(RMS) / A  
    45  
    15  
    10  
    5
    = 180  
    120  
    1
    65  
    15  
    90  
    60  
    85  
    10  
    5
    30  
    105  
    125  
    0
    0
    -50  
    0
    50  
    Ths / C  
    100  
    150  
    0
    5
    10  
    15  
    IT(RMS) / A  
    Fig.1. Maximum on-state dissipation, Ptot, versus rms  
    on-state current, IT(RMS), where α = conduction angle.  
    Fig.4. Maximum permissible rms current IT(RMS)  
    versus heatsink temperature Ths.  
    ,
    ITSM / A  
    1000  
    IT(RMS) / A  
    25  
    20  
    15  
    10  
    5
    dIT/dt limit  
    100  
    I
    TSM  
    time  
    I
    T
    T
    Tj initial = 25 C max  
    10ms 100ms  
    10  
    10us  
    0
    100us  
    1ms  
    T / s  
    0.01  
    0.1  
    surge duration / s  
    1
    10  
    Fig.2. Maximum permissible non-repetitive peak  
    on-state current ITSM, versus pulse width tp, for  
    sinusoidal currents, tp ≤ 20ms.  
    Fig.5. Maximum permissible repetitive rms on-state  
    current IT(RMS), versus surge duration, for sinusoidal  
    currents, f = 50 Hz; Ths ≤ 56˚C.  
    ITSM / A  
    100  
    VGT(Tj)  
    VGT(25 C)  
    1.6  
    I
    TSM  
    time  
    I
    T
    80  
    60  
    40  
    20  
    0
    1.4  
    1.2  
    1
    T
    Tj initial = 25 C max  
    0.8  
    0.6  
    0.4  
    1
    10  
    100  
    1000  
    -50  
    0
    50  
    Tj / C  
    100  
    150  
    Number of cycles at 50Hz  
    Fig.3. Maximum permissible non-repetitive peak  
    on-state current ITSM, versus number of cycles, for  
    sinusoidal currents, f = 50 Hz.  
    Fig.6. Normalised gate trigger voltage  
    VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.  
    February 2000  
    4
    Rev 1.000  
    Philips Semiconductors  
    Product specification  
    Three quadrant triacs  
    guaranteed commutation  
    BTA212X series D, E and F  
    IT / A  
    IGT(Tj)  
    IGT(25°C)  
    40  
    30  
    20  
    10  
    0
    Tj = 125 C  
    Tj = 25 C  
    typ  
    3
    2.5  
    2
    T2+ G+  
    T2+ G-  
    T2- G-  
    max  
    Vo = 1.175 V  
    Rs = 0.0316 Ohms  
    1.5  
    1
    0.5  
    0
    0
    0.5  
    1
    1.5  
    2
    2.5  
    3
    -50  
    0
    50  
    Tj/°C  
    100  
    150  
    VT / V  
    Fig.7. Normalised gate trigger current  
    IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.  
    Fig.10. Typical and maximum on-state characteristic.  
    IL(Tj)  
    IL(25 C)  
    Zth j-hs (K/W)  
    10  
    3
    with heatsink compound  
    without heatsink compound  
    2.5  
    2
    1
    unidirectional  
    bidirectional  
    0.1  
    1.5  
    1
    t
    P
    p
    D
    0.01  
    t
    0.5  
    0
    0.001  
    10us  
    0.1ms  
    1ms  
    10ms  
    tp / s  
    0.1s  
    1s  
    10s  
    -50  
    0
    50  
    Tj / C  
    100  
    150  
    Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),  
    Fig.11. Transient thermal impedance Zth j-hs, versus  
    pulse width tp.  
    versus junction temperature Tj.  
    dIcom/dt (A/ms)  
    IH(Tj)  
    IH(25C)  
    100  
    F TYPE  
    3
    E TYPE  
    D TYPE  
    2.5  
    2
    10  
    1.5  
    1
    0.5  
    0
    1
    20  
    40  
    60  
    80  
    Tj/˚C  
    100  
    120  
    140  
    -50  
    0
    50  
    Tj / C  
    100  
    150  
    Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),  
    Fig.12. Minimum Typical critical rate of change of  
    commutating current dIcom/dt versus junction  
    temperature, dVcom/dt = 20V/µs.  
    versus junction temperature Tj.  
    February 2000  
    5
    Rev 1.000  
    Philips Semiconductors  
    Product specification  
    Three quadrant triacs  
    guaranteed commutation  
    BTA212X series D, E and F  
    MECHANICAL DATA  
    Dimensions in mm  
    Net Mass: 2 g  
    10.3  
    max  
    4.6  
    max  
    3.2  
    3.0  
    2.9 max  
    2.8  
    Recesses (2x)  
    2.5  
    6.4  
    0.8 max. depth  
    15.8  
    max  
    seating  
    plane  
    15.8  
    max.  
    19  
    max.  
    3 max.  
    not tinned  
    3
    2.5  
    13.5  
    min.  
    1
    2
    3
    M
    0.4  
    1.0 (2x)  
    0.6  
    2.5  
    0.9  
    0.7  
    2.54  
    0.5  
    5.08  
    1.3  
    Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.  
    Notes  
    1. Refer to mounting instructions for F-pack envelopes.  
    2. Epoxy meets UL94 V0 at 1/8".  
    February 2000  
    6
    Rev 1.000  
    Philips Semiconductors  
    Product specification  
    Three quadrant triacs  
    guaranteed commutation  
    BTA212X series D, E and F  
    DEFINITIONS  
    Data sheet status  
    Objective specification  
    This data sheet contains target or goal specifications for product development.  
    Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
    Product specification  
    This data sheet contains final product specifications.  
    Limiting values  
    Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
    or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
    operation of the device at these or at any other conditions above those given in the Characteristics sections of  
    this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    Philips Electronics N.V. 2000  
    All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
    copyright owner.  
    The information presented in this document does not form part of any quotation or contract, it is believed to be  
    accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
    consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
    industrial or intellectual property rights.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices or systems where malfunction of these  
    products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
    for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
    from such improper use or sale.  
    February 2000  
    7
    Rev 1.000  
    配单直通车
    BTA212X800F产品参数
    型号:BTA212X800F
    是否Rohs认证： 不符合
    生命周期：Obsolete
    包装说明：,
    Reach Compliance Code：unknown
    风险等级：5.92
    关态电压最小值的临界上升速率：50 V/us
    最大直流栅极触发电流：25 mA
    最大直流栅极触发电压：1.5 V
    最大维持电流：30 mA
    JESD-609代码：e0
    最大漏电流：0.5 mA
    最大通态电压：1.6 V
    最高工作温度：125 °C
    最大均方根通态电流：12 A
    断态重复峰值电压：800 V
    子类别：TRIACs
    表面贴装：NO
    端子面层：Tin/Lead (Sn/Pb)
    触发设备类型：TRIAC
    Base Number Matches：1
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