BTS1660现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

当前位置：IC37首页_>B字母起始型号索引_>B字母起始型号索引第289页更新时间：2024-11-19 14:59:10

批量询价
供应商
型号
数量
厂商
封装
批号
交易说明
询价

首天国际（深圳）科技有限公司
BTS1660
数量-
厂家-
封装-
批号-
-
QQ：528164397 复制
QQ：1318502189 复制
0755-82807802/82807803

深圳市中利达电子科技有限公司
BTS1660
数量-
厂家-
封装-
批号-
-
QQ：1902134819 复制
QQ：2881689472 复制
0755-13686833545

深圳市芯福林电子有限公司
BTS1660
数量-
厂家-
封装-
批号-
-
QQ：2881495808 复制
QQ：308365177 复制
13418564337

柒号芯城电子商务（深圳）有限公司
BTS1660
数量-
厂家-
封装-
批号-
-
QQ：2881677436 复制
QQ：2881620402 复制
18922803401

北京元坤伟业科技有限公司
BTS1660
数量-
厂家-
封装-
批号-
-
QQ：857273081 复制
QQ：1594462451 复制
010-62104931、62106431、62104891、62104791

上海金庆电子技术有限公司
BTS1660

数量25
厂家NO
封装
批号新
全新原装货期两周
QQ：1484215649 复制
QQ：729272152 复制
021-51872561

深圳市一线半导体有限公司
BTS1660

数量22000
厂家INFINEON
封装
批号
全新原装部分现货其他订货
QQ：2881493920 复制
QQ：2881493921 复制
0755-88608801多线

产品型号BTS240-A的Datasheet PDF文件预览

TEMPFET^®BTS 240 A

Features

● N channel

● Enhancement mode

● Temperature sensor with thyristor characteristic

● The drain pin is electrically shorted to the tab

Type

V_DS

I_D

R_DS(on)

Package

Ordering Code

BTS 240A

50 V

58 A

0.018 Ω

TO-218AA

C67078-A5100-A3

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain-source voltage

V_DS

V_DGR

V_GS

I_D

Drain-gate voltage, R_GS= 20 kΩ

Gate-source voltage

± 20

Continuous drain current, T_C= 73 °C

ISO drain current

I_D-ISO

21.0

T_C= 85 ˚C, V_GS= 10 V, V_DS= 0.5 V

Pulsed drain current,

Short circuit current,

T_C= 25 °C

I_{D puls}

I_SC

232

147

2200

170

T_j= – 55 ... + 150 °C

Short circuit dissipation, T_j= – 55 ... + 150 °C

Power dissipation

P_SCmax

P_tot

Operating and storage temperature range

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

T_j, T_stg

–

– 55 ... + 150

°C

–

55/150/56

Thermal resistance

Chip-case

Chip-ambient

K/W

R_{th JC}

R_{th JA}

≤ 0.74

≤ 45

04.97

TEMPFET^®BTS 240 A

Electrical Characteristics

at T = 25 °C, unless otherwise specified.

Parameter

Symbol

Values

typ.

Unit

min.

max.

Static Characteristics

Drain-source breakdown voltage

V_(BR)DSS

V_GS(th)

I_DSS

_GS= 0, I_D= 0.25 mA

Gate threshold voltage

_GS= V_DS, I_D= 1 mA

Zero gate voltage drain current

_GS= 0 V, V_DS= 50 V

–

2.5

3.0

3.5

µA

T_j= 25 °C

T_j= 125 °C

–

0.1

1.0

100

Gate-source leakage current

_GS= 20 V, V_DS= 0

I_GSS

T_j= 25 °C

T_j= 150 °C

–

2.0

100

4.0

µA

Drain-source on-state resistance

_GS= 10 V, I_D=47 A

R_DS(on)

Ω

–

0.012

0.018

Dynamic Characteristics

Forward transconductance

g_fs

_DS≥ 2 × I_D× R_DS(on)max, I_D= 47 A

Input capacitance

_GS= 0, V_DS= 25 V, f = 1 MHz

Output capacitance

_GS= 0, V_DS= 25 V, f = 1 MHz

Reverse transfer capacitance

_GS= 0, V_DS= 25 V, f = 1 MHz

Turn-on time t_on, (t_on= t_d(on)+ t_r)

_CC= 30 V, V_GS= 10 V, I_D= 3 A, R_GS= 50 Ω

Turn-off time t_off, (t_off= t_d(off)+ t_f)

_CC= 30 V, V_GS= 10 V, I_D= 3 A, R_GS= 50 Ω

20.0

–

43.0

2.9

–

C_iss

C_oss

C_rss

4.3

2.1

–

1.4

–

0.5

0.8

t_d(on)

t_r

t_d(off)

t_f

150

350

250

230

560

330

04.97

TEMPFET^®BTS 240 A

Electrical Characteristics (cont’d)

at T = 25 °C, unless otherwise specified.

Parameter

Symbol

Values

typ.

Unit

min.

max.

Reverse Diode

Continuous source current

Pulsed source current

I_S

–

I_SM

V_SD

232

Diode forward on-voltage

I_F= 116 A, V_GS= 0

–

1.6

100

0.3

2.0

–

Reverse recovery time

I_F= I_S, di_F/dt = 100 A/µs, V_R= 30 V

t_rr

µC

Reverse recovery charge

I_F= I_S, di_F/dt = 100 A/µs, V_R= 30 V

Q_rr

–

Temperature Sensor

Forward voltage

V_TS(on)

_TS(on)= 10 mA, T = – 55 ... + 150 °C

0.7

1.4

1.5

Sensor override, t_p≤ 100 µs

T = – 55 ... + 160 °C

–

Forward current

I_TS(on)

T = – 55 ... + 150 °C

Sensor override, t_p≤ 100 µs

T = – 55 ... + 160 °C

–

600

Holding current, V_TS(off)= 5 V, T_j= 25 °C

T_j= 150 °C

I_H

0.05

0.1

0.2

0.5

0.3

Switching temperature

V_TS= 5 V

T_TS(on)

t_off

°C

µs

150

0.5

–

Turn-off time

V_TS= 5 V, I_TS(on)= 2 mA

2.5

04.97

TEMPFET^®BTS 240 A

Examples for short-circuit protection

at T = – 55 ... + 150 °C, unless otherwise specified.

Parameter

Symbol

Examples

Unit

–

Drain-source voltage

Gate-source voltage

Short-circuit current

Short-circuit dissipation

Response time

V_DS

V_GS

I_SC

–

6.4

5.1

< 147

< 2200

< 67

< 2000

P_SC

t_SC(off)

T = 25 °C, before short circuit

< 25

–

Short-circuit protection I_SC= f (V_DS)

Parameter: V_GS

Max. gate voltage V_GS(SC)= f (V_DS)

Parameter: T_j= – 55 ... + 150 °C

DiagramtodetermineI_SCforT_j=–55...+150°C

04.97

TEMPFET^®BTS 240 A

Max. power dissipation P_tot= f (T_C)

Typ. drain-source on-state resistance

_DS(on)= f (I_D)

Parameter: V_GS

Typical output characteristics I_D= f (V_DS)

Parameter: t_p= 80 µs

Safe operating area I_D= f (V_DS)

Parameter: D = 0.01, T_C= 25 °C

04.97

TEMPFET^®BTS 240 A

Drain-source on-state resistance

_DS(on)= f (T_j)

Gate threshold voltage V_GS(th)= f (T_j)

Parameter: V_DS= V_GS, I_D= 1 mA

Parameter: I_D= 47 A, V_GS= 10 V (spread)

Typ. transfer characteristic

I_D= f (V_GS)

Typ. transconductance g_fs= f (I_D)

Parameter: t_p= 80 µs, V_DS= 25 V

04.97

TEMPFET^®BTS 240 A

Continuous drain current I_D= f (T_C)

Parameter: V_GS≥ 10 V

Forward characteristics of reverse diode

I_F= f (V_SD)

Parameter: T_j, t_p= 80 µs (spread)

Typ. gate-source leakage current

Typ. capacitances C = f (V_DS)

Parameter: V_GS= 0, f = 1 MHz

I_GSS= f (T_C)

Parameter: V_GS= 20 V, V_DS= 0

04.97

TEMPFET^®BTS 240 A

Transient thermal impedance Z_thJC= f (t_p)

Parameter: D = t_p/T

04.97

TEMPFET^®BTS 240 A

TO-218 AA

Ordering Code

Standard

C67078-S5100-A3

04.97

TEMPFET^®BTS 240 A

Edition 04.97

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

D-81541 München, Germany

Infineon Technologies AG 2000.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding

circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address

list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

04.97

BTS1660相关文章

配单直通车

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

BTS2-08-07-1-B-SB产品参数

型号:	BTS2-08-07-1-B-SB
是否Rohs认证：	不符合
生命周期：	Active
IHS 制造商：	TE CONNECTIVITY LTD
Reach Compliance Code：	unknown
风险等级：	5.67
连接器支架类型：	CONNECTOR ACCESSORY
DIN 符合性：	NO
IEC 符合性：	NO
MIL 符合性：	YES
材料：	ALUMINUM ALLOY
军用连接器配件名称：	BACKSHELL
外壳尺寸：	08
Base Number Matches：	1

电子百科

产品导航

产品型号BTS240-A的Datasheet PDF文件预览

BTS1660相关产品

BTS1660相关文章

IC37:专业IC行业平台