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    • 北京元坤伟业科技有限公司

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    • BTS432-F2E3043
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    产品型号BTS432-I2的Datasheet PDF文件预览

    ®
    PROFET BTS 432 I2  
    Smart Highside Power Switch  
    Features  
    Product Summary  
    1
    ·
    ·
    ·
    ·
    ·
    ·
    ·
    ·
    ·
    ·
    ·
    ·
    )
    Load dump and reverse battery protection  
    Clamp of negative voltage at output  
    Short-circuit protection  
    Current limitation  
    Thermal shutdown  
    Diagnostic feedback  
    Open load detection in OFF-state  
    CMOS compatible input  
    Electrostatic discharge (ESD) protection  
    Loss of ground and loss of V protection  
    V
    80  
    58  
    V
    V
    Load dump  
    V -VOUT Avalanche Clamp  
    bb  
    V
    V
    R
    4.5 ... 42  
    -32  
    V
    V
    bb (operation)  
    bb (reverse)  
    ON  
    38  
    42  
    mW  
    A
    I
    L(SCp)  
    I
    33  
    A
    L(SCr)  
    I
    11  
    A
    L(ISO)  
    2)  
    bb  
    Overvoltage protection  
    Undervoltage and overvoltage shutdown with auto-restart and  
    hysteresis  
    5
    Application  
    5
    ·
    1
    mC compatible power switch with diagnostic feedback  
    for 12 V and 24 V DC grounded loads  
    Standard  
    SMD  
    ·
    ·
    All types of resistive, inductive and capacitve loads  
    Replaces electromechanical relays and discrete circuits  
    General Description  
    N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
    â
    feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection  
    functions.  
    R
    bb  
    + V  
    bb  
    3
    Voltage  
    source  
    V
    Overvoltage  
    protection  
    Current  
    limit  
    Gate  
    protection  
    Logic  
    OUT  
    Charge pump  
    Level shifter  
    Limit for  
    unclamped  
    ind. loads  
    Voltage  
    sensor  
    5
    Temperature  
    sensor  
    Rectifier  
    IN  
    2
    Open load  
    detection  
    Load  
    Logic  
    ESD  
    4
    ST  
    Short circuit  
    detection  
    â
    PROFET  
    GND  
    1
    Load GND  
    Signal GND  
    1)  
    2)  
    No external components required, reverse load current limited by connected load.  
    Additional external diode required for charged inductive loads  
    Infineon Technologies AG  
    Page 1 of 15  
    1999-02-19  
    BTS 432 I2  
    Pin  
    1
    Symbol  
    GND  
    IN  
    Function  
    -
    Logic ground  
    2
    I
    Input, activates the power switch in case of logical high signal  
    3
    V
    +
    Positive power supply voltage,  
    the tab is shorted to this pin  
    bb  
    4
    5
    ST  
    S
    Diagnostic feedback, low on failure  
    Output to the load  
    OUT  
    O
    (Load, L)  
    Maximum Ratings at Tj = 25 °C unless otherwise specified  
    Parameter  
    Symbol  
    Values  
    Unit  
    V
    Supply voltage (overvoltage protection see page 3)  
    Vbb  
    Vs3)  
    63  
    Load dump protection VLoadDump = UA + Vs, UA = 13.5 V  
    RI= 2 W, RL= 1.1 W, td= 200 ms, IN= low or high  
    66.5  
    V
    Load current (Short-circuit current, see page 4)  
    Operating temperature range  
    IL  
    self-limited  
    -40 ...+150  
    -55 ...+150  
    A
    Tj  
    °C  
    Storage temperature range  
    Tstg  
    Ptot  
    Power dissipation (DC)  
    125  
    W
    Inductive load switch-off energy dissipation,  
    single pulse  
    T=150 °C: EAS  
    1.7  
    2.0  
    J
    j
    Electrostatic discharge capability (ESD)  
    (Human Body Model)  
    VESD  
    kV  
    Input voltage (DC)  
    VIN  
    -0.5 ... +6  
    ±5.0  
    V
    Current through input pin (DC)  
    Current through status pin (DC)  
    see internal circuit diagrams page 6...  
    I
    IN  
    mA  
    ±5.0  
    IST  
    Thermal resistance  
    chip - case: RthJC  
    £ 1 K/W  
    £ 75  
    £ tbd  
    junction - ambient (free air): RthJA  
    SMD version, device on pcb4):  
    3)  
    4)  
    VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839  
    Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70mm thick) copper area for V  
    bb  
    connection. PCB is vertical without blown air.  
    Infineon Technologies AG  
    Page 2  
    1999-02-19  
    BTS 432 I2  
    Electrical Characteristics  
    Parameter and Conditions  
    Symbol  
    Values  
    Unit  
    at Tj = 25 °C, V = 12 V unless otherwise specified  
    bb  
    min  
    --  
    typ  
    max  
    Load Switching Capabilities and Characteristics  
    On-state resistance (pin 3 to 5)  
    IL = 2 A  
    T=25 °C: RON  
    j
    30  
    55  
    11  
    38  
    70  
    --  
    mW  
    T=150 °C:  
    j
    Nominal load current (pin 3 to 5)  
    IL(ISO)  
    9
    A
    ISO Proposal: VON = 0.5 V, TC = 85 °C  
    Output current (pin 5) while GND disconnected or  
    GND pulled up, VIN= 0, see diagram page 7,  
    IL(GNDhigh)  
    --  
    --  
    1
    mA  
    T =-40...+150°C  
    j
    Turn-on time  
    Turn-off time  
    to 90% VOUT: ton  
    to 10% VOUT: toff  
    50  
    10  
    160  
    --  
    300  
    80  
    ms  
    RL = 12 W, T =-40...+150°C  
    j
    Slew rate on  
    dV /dton  
    -dV/dtoff  
    0.4  
    1
    --  
    --  
    2.5 V/ms  
    5 V/ms  
    10 to 30% VOUT, RL = 12 W, T =-40...+150°C  
    j
    Slew rate off  
    70 to 40% VOUT, RL = 12 W, T =-40...+150°C  
    j
    Operating Parameters  
    Operating voltage 5)  
    Undervoltage shutdown  
    Undervoltage restart  
    T =-40...+150°C: Vbb(on)  
    4.5  
    2.4  
    --  
    --  
    --  
    42  
    4.5  
    4.5  
    7.5  
    V
    V
    V
    V
    j
    T =-40...+150°C: Vbb(under)  
    j
    T =-40...+150°C: Vbb(u rst)  
    j
    --  
    Undervoltage restart of charge pump  
    see diagram page 12  
    Vbb(ucp)  
    --  
    6.5  
    T =-40...+150°C:  
    j
    Undervoltage hysteresis  
    DVbb(under) = Vbb(u rst) - Vbb(under)  
    DVbb(under)  
    --  
    0.2  
    --  
    V
    Overvoltage shutdown  
    Overvoltage restart  
    Overvoltage hysteresis  
    Overvoltage protection6)  
    Ibb=40 mA  
    T =-40...+150°C: Vbb(over)  
    42  
    42  
    --  
    --  
    --  
    52  
    --  
    V
    V
    V
    V
    j
    T =-40...+150°C: Vbb(o rst)  
    j
    T =-40...+150°C: DVbb(over)  
    j
    0.2  
    --  
    67  
    --  
    T =-40°C: Vbb(AZ)  
    j
    T =25...+150°C:  
    j
    60  
    63  
    --  
    Standby current (pin 3)  
    VIN=0, IST=0,  
    Ibb(off)  
    mA  
    --  
    --  
    40  
    50  
    70  
    110  
    Tj=-40...+25°C:  
    Tj=150°C:  
    Operating current (Pin 1)7), VIN=5 V  
    IGND  
    --  
    1.1  
    -- mA  
    5)  
    At supply voltage increase up to V = 6.5 V typ without charge pump, V  
    »V - 2 V  
    bb  
    bb  
    OUT  
    6)  
    7)  
    see also V  
    in table of protection functions and circuit diagram page 7. Meassured without load.  
    ON(CL)  
    Add I , if I > 0, add I , if V >5.5 V  
    ST  
    ST  
    IN  
    IN  
    Infineon Technologies AG  
    Page 3  
    1999-02-19  
    BTS 432 I2  
    Protection Functions  
    Initial peak short circuit current limit (pin 3 to 5)8),  
    IL(SCp)  
    ( max 400 ms if VON > VON(SC)  
    )
    Tj =-40°C:  
    Tj =25°C:  
    Tj =+150°C:  
    --  
    --  
    22  
    --  
    42  
    --  
    72  
    --  
    --  
    A
    Repetitive short circuit current limit  
    IL(SCr)  
    Tj = Tjt (see timing diagrams, page 10)  
    20  
    80  
    33  
    --  
    --  
    A
    Short circuit shutdown delay after input pos. slope  
    VON > VON(SC) Tj =-40..+150°C: td(SC)  
    ,
    400  
    ms  
    min value valid only, if input "low" time exceeds 30 ms  
    Output clamp (inductive load switch off)  
    at VOUT = Vbb - VON(CL), IL= 30 mA  
    VON(CL)  
    --  
    58  
    --  
    V
    Short circuit shutdown detection voltage  
    (pin 3 to 5)  
    VON(SC)  
    Tjt  
    --  
    150  
    --  
    8.3  
    --  
    --  
    --  
    V
    °C  
    K
    Thermal overload trip temperature  
    Thermal hysteresis  
    Inductive load switch-off energy dissipation9),  
    DTjt  
    EAS  
    10  
    --  
    --  
    --  
    1.7  
    1.3  
    1.0  
    J
    Tj Start = 150 °C, single pulse  
    Vbb = 12 V: ELoad12  
    Vbb = 24 V: ELoad24  
    Reverse battery (pin 3 to 1) 10)  
    Integrated resistor in Vbb line  
    -Vbb  
    --  
    --  
    --  
    32  
    --  
    V
    Rbb  
    120  
    W
    Diagnostic Characteristics  
    Open load detection current  
    IL(off)  
    10  
    2
    30  
    3
    60  
    4
    mA  
    Open load detection voltage  
    Tj=-40..150°C:  
    VOUT(OL)  
    V
    )
    Short circuit current limit for max. duration of 400 ms, prior to shutdown (see t  
    page 4)  
    d(SC)  
    9)  
    While demagnetizing load inductance, dissipated energy in PROFET is E  
    =
    AS  
    VON(CL) * iL(t) dt, approx.  
    VON(CL)  
    VON(CL) - Vbb  
    2
    L
    1
    E
    = / * L * I * (  
    AS  
    ), see diagram page 8  
    2
    10)  
    Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse  
    current I of » 0.3 A at V = -32 V through the logic heats up the device. Time allowed under these  
    GND  
    bb  
    condition is dependent on the size of the heatsink. Reverse I  
    can be reduced by an additional external  
    GND  
    GND-resistor (150 W). Input and Status currents have to be limited (see max. ratings page 2 and circuit page  
    7).  
    Infineon Technologies AG  
    Page 4  
    1999-02-19  
    BTS 432 I2  
    Input and Status Feedback11)  
    Input turn-on threshold voltage  
    VIN(T+)  
    VIN(T-)  
    D VIN(T)  
    1.5  
    1.0  
    --  
    --  
    2.4  
    --  
    V
    V
    Tj =-40..+150°C:  
    Tj =-40..+150°C:  
    Input turn-off threshold voltage  
    Input threshold hysteresis  
    Off state input current (pin 2)  
    --  
    1
    0.5  
    --  
    --  
    V
    VIN = 0.4 V: I  
    30  
    mA  
    IN(off)  
    On state input current (pin 2)  
    VIN = 3.5 V: I  
    10  
    25  
    50  
    mA  
    IN(on)  
    Delay time for status with open load  
    td(ST OL3)  
    40  
    80  
    --  
    300  
    400  
    ms  
    ms  
    after Input neg. slope (see diagram page 12)  
    Status invalid after positive input slope  
    td(ST SC)  
    200  
    (short circuit)  
    T =-40 ... +150°C:  
    j
    Status output (CMOS)  
    12)  
    T =-40...+150°C, IST= - 50 mA: VST(high)  
    4.4  
    --  
    5.1  
    --  
    6.5  
    0.4  
    V
    j
    T =-40...+150°C, IST = +1.6 mA: VST(low)  
    j
    Max. status current for  
    valid status output,  
    current source (out): -IST  
    current sink (in) : +IST  
    --  
    -- 0.25 mA  
    13)  
    --  
    --  
    1.6  
    T =-40...+150°C  
    j
    11)  
    If a ground resistor R  
    is used, add the voltage drop across this resistor.  
    GND  
    12)  
    13)  
    V
    » V during undervoltage shutdown  
    St high  
    No current sink capability during undervoltage shutdown  
    bb  
    Infineon Technologies AG  
    Page 5  
    1999-02-19  
    BTS 432 I2  
    Truth Table  
    Input-  
    level  
    Output  
    level  
    Status  
    432  
    D2  
    432  
    E2/F2  
    432  
    I2  
    H
    H
    H
    H
    Normal  
    operation  
    Open load  
    L
    H
    L
    L
    H
    14  
    H
    H
    L
    H
    L
    H
    L
    )
    H
    H
    H
    L
    L
    H
    H
    L
    L
    L
    L
    L
    L
    H
    L
    H
    L
    Short circuit  
    to GND  
    Short circuit  
    L
    H
    L
    H
    L
    H
    L
    H
    L
    H
    L
    L
    H
    L
    H
    H
    15)  
    15)  
    H (L  
    )
    to V  
    H (L  
    )
    bb  
    L
    L
    L
    L
    Overtem-  
    perature  
    Undervoltage  
    L
    16)  
    16)  
    16)  
    H
    H
    L
    L
    L
    L
    16)  
    L
    L
    H
    H
    Overvoltage  
    L
    L
    H
    L = "Low" Level  
    H = "High" Level  
    Terms  
    Status output  
    I
    bb  
    V
    Logic  
    3
    I
    IN  
    V
    bb  
    IN  
    ST  
    2
    I
    V
    L
    ON  
    OUT  
    PROFET  
    I
    5
    ST  
    ESD-  
    ZD  
    ST  
    GND  
    4
    V
    GND  
    V
    IN  
    ST  
    V
    1
    I
    Zener diode: 6.1 V typ., max 5 mA, V  
    ESD zener diodes are not designed for continuous  
    current  
    5 V typ,  
    Logic  
    bb  
    V
    GND  
    OUT  
    R
    GND  
    Short Circuit detection  
    Fault Condition: VON > 8.3 V typ.; IN high  
    Input circuit (ESD protection)  
    + V  
    bb  
    R
    I
    IN  
    ESD-  
    V
    ON  
    ZD ZD  
    I1  
    I2  
    I
    I
    OUT  
    GND  
    Short circuit  
    detection  
    Logic  
    unit  
    ZD 6.1 V typ., ESD zener diodes are not designed for  
    I1  
    continuous current  
    14)  
    15)  
    16)  
    Power Transistor off, high impedance  
    Low resistance short V to output may be detected by no-load-detection  
    bb  
    No current sink capability during undervoltage shutdown  
    Infineon Technologies AG  
    Page 6  
    1999-02-19  
    BTS 432 I2  
    Inductive and overvoltage output clamp  
    GND disconnect  
    + V  
    bb  
    V
    Z
    3
    V
    V
    bb  
    ON  
    IN  
    2
    OUT  
    PROFET  
    5
    OUT  
    ST  
    4
    GND  
    GND  
    1
    V
    V
    V
    V
    bb  
    IN  
    ST  
    V
    clamped to 58 V typ.  
    GND  
    ON  
    Overvolt. and reverse batt. protection  
    Any kind of load. In case of Input=high is VOUT » VIN - VIN(T+)  
    .
    Due to VGND >0, no VST = low signal available.  
    + V  
    bb  
    GND disconnect with GND pull up  
    R
    bb  
    V
    Z
    R
    3
    IN  
    IN  
    V
    bb  
    IN  
    Logic  
    2
    V
    OUT  
    ST  
    OUT  
    R
    PROFET  
    ST  
    5
    GND  
    PROFET  
    ST  
    4
    GND  
    1
    R
    GND  
    Signal GND  
    V
    V
    V
    R
    R
    = 120 W typ., V +Rbb*40 mA = 67 V typ., add  
    , R , R for extended protection  
    V
    ST  
    IN  
    bb  
    GND IN ST  
    Z
    GND  
    bb  
    Any kind of load. If VGND > VIN - VIN(T+) device stays off  
    Due to VGND >0, no VST = low signal available.  
    Open-load detection  
    V
    disconnect with charged inductive  
    bb  
    OFF-state diagnostic condition: VOUT > 3 V typ.; IN low  
    load  
    3
    V
    high  
    bb  
    IN  
    2
    OFF  
    OUT  
    PROFET  
    I
    5
    L(OL)  
    ST  
    4
    GND  
    1
    Open load  
    detection  
    Logic  
    V
    unit  
    OUT  
    V
    bb  
    Signal GND  
    Infineon Technologies AG  
    Page 7  
    1999-02-19  
    BTS 432 I2  
    Inductive Load switch-off energy  
    3
    dissipation  
    E
    bb  
    V
    high  
    bb  
    IN  
    2
    E
    AS  
    OUT  
    PROFET  
    5
    E
    Load  
    V
    ST  
    bb  
    4
    IN  
    GND  
    1
    OUT  
    PROFET  
    =
    ST  
    E
    L
    V
    bb  
    GND  
    E
    R
    Energy dissipated in PROFET EAS = Ebb + EL - ER.  
    2
    L
    1
    E
    < E , E = / * L * I  
    L L 2  
    Load  
    Infineon Technologies AG  
    Page 8  
    1999-02-19  
    BTS 432 I2  
    Options Overview  
    all versions: High-side switch, Input protection, ESD protection, load dump and  
    reverse battery protection , protection against loss of ground  
    Type  
    BTS 432D2 432E2 432F2 432I2  
    Logic version  
    D
    E
    F
    I
    Overtemperature protection  
    T >150 °C, latch function17 18  
    X
    X
    X
    )
    )
    j
    X
    X
    T >150 °C, with auto-restart on cooling  
    j
    Short-circuit to GND protection  
    17)  
    switches off when V >8.3 V typ.  
    X
    X
    X
    X
    X
    X
    ON  
    (when first turned on after approx. 200 ms)  
    Open load detection  
    in OFF-state with sensing current 30 mA typ.  
    in ON-state with sensing voltage drop across  
    power transistor  
    X
    Undervoltage shutdown with auto restart  
    Overvoltage shutdown with auto restart  
    X
    X
    X
    X
    X
    X
    X
    X
    Status feedback for  
    overtemperature  
    X
    X
    X
    X
    X
    X
    X
    X
    X
    short circuit to GND  
    X
    X
    X
    19)  
    19)  
    19)  
    short to V  
    open load  
    -
    -
    -
    bb  
    X
    X
    X
    X
    -
    X
    -
    undervoltage  
    overvoltage  
    -
    -
    Status output type  
    CMOS  
    X
    X
    X
    X
    X
    Open drain  
    Output negative voltage transient limit  
    (fast inductive load switch off)  
    to V - V  
    bb  
    ON(CL)  
    X
    X
    X
    X
    X
    X
    Load current limit  
    high level (can handle loads with high inrush currents)  
    medium level  
    X
    low level (better protection of application)  
    17)  
    Latch except when V -V  
    < V  
    after shutdown. In most cases V  
    = 0 V after shutdown (V  
    bb OUT  
    ON(SC)  
    OUT OUT  
    ¹ 0 V only if forced externally). So the device remains latched unless V < V  
    (see page 4). No latch  
    bb  
    ON(SC)  
    between turn on and t  
    .
    d(SC)  
    18)  
    19)  
    With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage  
    Low resistance short V to output may be detected by no-load-detection  
    bb  
    Infineon Technologies AG  
    Page 9  
    1999-02-19  
    BTS 432 I2  
    Timing diagrams  
    Figure 2b: Switching an inductive load  
    Figure 1a: V turn on:  
    bb  
    IN  
    IN  
    t
    d(bb IN)  
    V
    bb  
    ST  
    V OUT  
    V
    OUT  
    A
    ST CMOS  
    I
    L
    t
    A
    t
    in case of too early V =high the device may not turn on (curve  
    IN  
    A)  
    td(bb IN) approx. 150 ms  
    Figure 3a: Turn on into short circuit,  
    Figure 2a: Switching a lamp,  
    IN  
    IN  
    ST  
    ST  
    V
    OUT  
    VOUT  
    t
    d(SC)  
    I
    L
    I
    L
    t
    t
    t
    approx. 200ms if Vbb - VOUT > 8.3 V typ.  
    d(SC)  
    Infineon Technologies AG  
    Page 10  
    1999-02-19  
    BTS 432 I2  
    Figure 3b: Turn on into overload,  
    Figure 4a: Overtemperature,  
    Reset if (IN=low) and (T <T )  
    j
    jt  
    IN  
    IN  
    I L  
    ST  
    V
    I
    L(SCp)  
    I
    L(SCr)  
    OUT  
    ST  
    T
    J
    t
    t
    Heating up may require several milliseconds , Vbb - VOUT < 8.3 V  
    typ.  
    *) ST goes high , when V =low and T <T  
    IN  
    j
    jt  
    Figure 3c: Short circuit while on:  
    Figure 5a: Open load: detection in ON-state, open  
    load occurs in on-state  
    IN  
    IN  
    ST  
    t
    t
    d(OL ST2)  
    d(ST OL1)  
    ST  
    V
    VOUT  
    OUT  
    I L  
    **)  
    normal  
    normal  
    I
    open  
    L
    t
    **) current peak approx. 20 ms  
    t
    td(ST OL1) = tbd ms typ., td(ST OL2) = tbd ms typ  
    Infineon Technologies AG  
    Page 11  
    1999-02-19  
    BTS 432 I2  
    Figure 5b: Open load: detection in OFF-state, turn  
    Figure 6a: Undervoltage:  
    on/off to open load  
    IN  
    IN  
    V
    bb  
    td(ST OL3)  
    ST  
    V
    bb(u cp)  
    V
    bb(under)  
    V
    bb(u rst)  
    VOUT  
    VOUT  
    I
    ST CMOS  
    L
    normal  
    open  
    t
    t
    *)  
    in case of external capacity td(ST,OL3) may be higher due to high  
    impedance *) IL = 30 mA typ  
    Figure 6b: Undervoltage restart of charge pump  
    V
    [V]  
    ON  
    VON(CL)  
    Von  
    Figure 5c: Open load: detection in OFF-state, open  
    load occurs in off-state  
    off  
    IN  
    ST  
    V bb(over)  
    off  
    V
    V
    Vbb(u rst)  
    V
    bb(o rst)  
    OUT  
    bb(u cp)  
    V bb(under)  
    on  
    open  
    load  
    normal  
    load  
    I
    normal  
    load  
    Vbb  
    L
    V
    bb  
    [V]  
    charge pump starts at Vbb(ucp) =6.5 V typ.  
    t
    *)  
    *)  
    *) IL = 30 mA typ  
    Infineon Technologies AG  
    Page 12  
    1999-02-19  
    BTS 432 I2  
    Figure 7a: Overvoltage:  
    IN  
    VON(CL)  
    V
    V
    V
    bb(over)  
    bb(o rst)  
    bb  
    VOUT  
    ST  
    t
    Infineon Technologies AG  
    Page 13  
    1999-02-19  
    BTS 432 I2  
    Package and Ordering Code  
    All dimensions in mm  
    Standard TO-220AB/5  
    Ordering code  
    SMD TO-220AB/5, Opt. E3122 Ordering code  
    BTS 432 I2 E3122A T&R:  
    Q67060-S6204-A3  
    BTS 432 I2  
    Q67060-S6204-A2  
    Infineon Technologies AG  
    Page 14  
    1999-02-19  
    BTS 432 I2  
    Published by Infineon Technologies AG  
    Balanstraße 73, D-81541 München  
    ã Infineon Technologies AG 2002. All Rights Reserved  
    Attention please!  
    As far as patents or other rights of third parties are concerned,  
    liability is only assumed for components, not for applications,  
    processes and circuits implemented within components or  
    assemblies. The information describes a type of component and  
    shall not be considered as warranted characteristics. Terms of  
    delivery and rights to change design reserved. For questions on  
    technology, delivery and prices please contact Infineon Offices in  
    Germany or the Infineon Companies and Representatives  
    worldwide (see address list). Due to technical requirements  
    components may contain dangerous substances. For information  
    on the types in question please contact your nearest Infineon  
    Office. Infineon Technologies AG is an approved CECC  
    manufacturer.  
    Packing: Please use the recycling operators known to you. We  
    can also help you - get in touch with your nearest sales office. By  
    agreement we will take packing material back, if it is sorted. You  
    must bear the costs of transport. For packing material that is  
    returned to us unsorted or which we are not obliged to accept, we  
    shall have to invoice you for any costs incurred.  
    Components used in life-support devices or systems must be  
    20)  
    expressly authorised for such purpose! Critical components  
    of Infineon Technologies AG, may only be used in life supporting  
    devices or systems21) with the express written approval of Infineon  
    Technologies AG.  
    20)  
    A critical component is a component used in a life-support  
    device or system whose failure can reasonably be expected  
    to cause the failure of that life-support device or system, or to  
    affect its safety or effectiveness of that device or system.  
    21)  
    Life support devices or systems are intended (a) to be  
    implanted in the human body or (b) support and/or maintain  
    and sustain and/or protect human life. If they fail, it is  
    reasonably to assume that the health of the user or other  
    persons may be endangered.  
    Infineon Technologies AG  
    Page 15  
    1999-02-19  
    配单直通车
    BTS432D产品参数
    型号:BTS432D
    是否Rohs认证： 不符合
    生命周期：Obsolete
    包装说明：ZIP, ZIP5,.15,.2,67TB
    Reach Compliance Code：unknown
    风险等级：5.89
    JESD-30 代码：R-PZIP-T5
    JESD-609代码：e0
    端子数量：5
    封装主体材料：PLASTIC/EPOXY
    封装代码：ZIP
    封装等效代码：ZIP5,.15,.2,67TB
    封装形状：RECTANGULAR
    封装形式：IN-LINE
    电源：4.5/42 V
    认证状态：Not Qualified
    子类别：MOSFET Drivers
    表面贴装：NO
    端子面层：Tin/Lead (Sn/Pb)
    端子形式：THROUGH-HOLE
    端子节距：1.7 mm
    端子位置：ZIG-ZAG
    Base Number Matches：1
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