BTS7930现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

Data Sheet, Rev. 2.0, June 2006

BTS 7930B

High Current PN Half Bridge

NovalithIC^TM

30 A, 10 mΩ + 18 mΩ typ.

Automotive Power

N e v e r s t o p t h i n k i n g .

High Current PN Half Bridge

BTS 7930B

Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

2.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

4 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

4.1 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

4.2 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

4.2.1 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.2.2 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.2.3 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 11

4.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

4.3.1 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3.2 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3.3 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3.4 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3.5 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4.3.6 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . 16

4.4 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

4.4.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.4.2 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.4.3 Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.4.4 Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . 17

4.4.5 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

4.4.6 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . 20

5 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21

6 Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

6.1 Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

6.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

7 Package Outlines P-TO-263-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23

8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24

Data Sheet

1

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

NovalithIC^TM

BTS 7930B

Product Summary

BTS 7930B

P-TO-263-7

The BTS 7930B is a fully integrated high current half

bridge for motor drive applications. It is part of the

NovalithIC^TMfamily containing one p-channel highside

MOSFET and one n-channel lowside MOSFET with an

integrated driver IC in one package. Due to the p-channel

highside switch the need for a charge pump is eliminated

thus minimizing EMI. Interfacing to a microcontroller is

made easy by the integrated driver IC which features

logic level inputs, diagnosis with current sense, slew rate

adjustment, dead time generation and protection against overtemperature, overvoltage,

undervoltage, overcurrent and short circuit.

The BTS 7930B provides a cost optimized solution for protected high current PWM

motor drives with very low board space consumption.

Basic Features

• Path resistance of typ. 28 mΩ @ 25 °C

• Low quiescent current of typ. 7 µA @ 25 °C

• PWM capability of up to 25 kHz combined with active freewheeling

• Switched mode current limitation for reduced power dissipation in overcurrent

• Current limitation level of 30 A typ.

• Status flag diagnosis with current sense capability

• Overtemperature shut down with latch behaviour

• Overvoltage lock out

• Undervoltage shut down

• Driver circuit with logic level inputs

• Adjustable slew rates for optimized EMI

Type

Package

BTS 7930B

P-TO-263-7

Data Sheet

2

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Overview

1

Overview

The BTS 7930B is part of the NovalithIC family containing three separate chips in one

package: One p-channel highside MOSFET and one n-channel lowside MOSFET

together with a driver IC, forming a fully integrated high current half-bridge. All three

chips are mounted on one common leadframe, using the chip on chip and chip by chip

technology. The power switches utilize vertical MOS technologies to ensure optimum on

state resistance. Due to the p-channel highside switch the need for a charge pump is

eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the

integrated driver IC which features logic level inputs, diagnosis with current sense, slew

rate adjustment, dead time generation and protection against overtemperature,

overvoltage, undervoltage, overcurrent and short circuit. The BTS 7930B can be

combined with other BTS 7930B to form H-bridge and 3-phase drive configurations.

1.1

Block Diagram

HS base-chip

BTS 7930B

VS

Top-chip

OUT

Gate Driver

IN

INH

SR

Dead Time Gen.

Slew Rate Adj.

UV Shut Down

OV Lock Out

Current Lim.

Diagnosis

LS base-chip

Current Sense

IS

GND

Figure 1

Block Diagram

Data Sheet

3

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Overview

1.2

Terms

Following figure shows the terms used in this data sheet.

V_VS,V_S

I_VS, -I_D(HS)

V_DS(HS)

I

IN

VS

IN

V_IN

V_INH

V_SR

I_INH

I_SR

I_IS

INH

SR

IS

I_OUT, I_L

V_SD(LS)

BTS 7930B

OUT

V_OUT

GND

V_IS

I_GND,I_D(LS)

Figure 2

Terms

Data Sheet

4

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Pin Configuration

2

Pin Configuration

2.1

Pin Assignment

BTS 7930B

P-TO-263-7

8

1

3

5 7

2

4

6

Figure 3

2.2

Pin Assignment BTS 7930B (top view)

Pin Definitions and Functions

1

Symbol

GND

IN

I/O

Function

Ground

Input

-

2

I

Defines whether high- or lowside switch is activated

3

INH

I

Inhibit

When set to low device goes in sleep mode

4,8

OUT

O

Power output of the bridge

5

SR

I

Slew Rate

The slew rate of the power switches can be adjusted

by connecting a resistor between SR and GND

6

IS

O

Current Sense and Diagnosis

7

VS

-

Supply

Bold type: pin needs power wiring

Data Sheet

5

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Maximum Ratings

3

Maximum Ratings

-40 °C < T_j< 150 °C (unless otherwise specified)

Pos

Parameter

Symbol

Limits

Unit Test Condition

min max

Electrical Maximum Ratings

3.0.1 Supply voltage

V

-0.3 45

-0.3 5.3

V

VS

3.0.2 Logic Input Voltage

V_IN

V_INH

3.0.3 HS/LS continuous drain I_D(HS)

-20

-50

20¹⁾

50¹⁾

A

T_C< 85°C

switch active

current

I_D(LS)

3.0.4 HS/LS pulsed drain

current

I_D(HS)

I_D(LS)

T_C< 85°C

t_pulse= 10ms

single pulse

3.0.5 HS/LS PWM current

I_D(HS)

I_D(LS)

-26

-28

26¹⁾

28¹⁾

A

T_C< 85°C

f = 1kHz, DC = 50%

T_C< 85°C

f = 20kHz, DC = 50%

3.0.6 Voltage at SR pin

V_SR

-0.3 1.0

V

3.0.7 Voltage between VS and V_VS-V_IS-0.3 45

IS pin

3.0.8 Voltage at IS pin

V_IS

-20

45

V

Thermal Maximum Ratings

3.0.9 Junction temperature

3.0.10 Storage temperature

T_j

T_stg

-40

-55

150 °C

ESD Susceptibility

3.0.11 ESD susceptibility HBM V_ESD

kV

according to EIA/

JESD 22-A 114B

IN, INH, SR, IS

OUT, GND, VS

-2

-4

2

4

1)

Maximum reachable current may be smaller depending on current limitation level

Note: Maximum ratings are absolute ratings; exceeding any one of these values may

cause irreversible damage to the device. Exposure to maximum rating conditions

for extended periods of time may affect device reliability

Data Sheet

6

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4

Block Description and Characteristics

4.1

Supply Characteristics

– 40 °C < T_j< 150 °C, 8 V < V_S< 18 V, I_L= 0A (unless otherwise specified)

Pos. Parameter

Symbol Limit Values

Unit Test Conditions

min. typ. max.

General

4.1.1 Operating Voltage V_S

5.5

–

28.0 V

mA

4.1.2 Supply Current

I_VS(on)

–

2

3

V

R

_INH= 5 V

_IN= 0 V or 5 V

_SR=0 Ω

DC-mode

normal operation

(no fault condition)

4.1.3 Quiescent Current I_VS(off)

–

7

–

15 µA

65 µA

V

_INH= 0 V

_IN= 0 V or 5 V

T_j<85 °C

V

_INH= 0 V

_IN= 0 V or 5 V

Data Sheet

7

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.2

Power Stages

The power stages of the BTS 7930B consist of a p-channel vertical DMOS transistor for

the high side switch and a n-channel vertical DMOS transistor for the low side switch. All

protection and diagnostic functions are located in a separate top chip. Both switches can

be operated up to 25 kHz, allowing active freewheeling and thus minimizing power

dissipation in the forward operation of the integrated diodes.

The on state resistance R_ONis dependent on the supply voltage V_Sas well as on the

junction temperature T_j. The typical on state resistance characteristics are shown in

Figure 4.

Low Side Switch

High Side Switch

40

mΩ

70

mΩ

35

60

30

R_ON(HS)

50

R_ON(LS)

25

20

15

10

5

40

30

20

10

T_j= 150°C

T_j= 25°C

T_j= -40°C

T = 25°C

j

T_j= -40°C

V

28

4

8

12

16

20

V_S

24

28

4

8

12

16

20

V_S

24

Figure 4

Typical On State Resistance vs. Supply Voltage

Data Sheet

8

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.2.1

– 40 °C < T_j< 150 °C, 8 V < V_S< 18 V (unless otherwise specified)

Pos. Parameter Symbol Limit Values Unit Test Conditions

min. typ. max.

High Side Switch - Static Characteristics

Power Stages - Static Characteristics

4.2.1 On state high side

resistance

R_ON(HS)

mΩ

I_OUT= 8 A

V_S= 13.5 V

T_j= 25 °C

T_j= 150 °C

–

10

15

13

19

4.2.2 Leakage current high I_L(LKHS)

–

1

µA

V

_INH= 0 V

_OUT= 0 V

side

V

T_j< 85 °C

–

50 µA

V

_INH= 0 V

_OUT= 0 V

T_j= 150 °C

4.2.3 Reverse diode

forward-voltage high

side ¹⁾

V_DS(HS)

V

1.5

1.1

I_OUT= -8 A

–

0.9

0.8

0.6

T_j= -40 °C

T_j= 25 °C

T_j= 150 °C

0.8

Low Side Switch - Static Characteristics

4.2.4 On state low side

resistance

R_ON(LS)

mΩ

I_OUT= -8 A

V_S= 13.5V

T_j= 25 °C

T_j= 150 °C

–

18

30

24

40

4.2.5 Leakage current low I_L(LKLS)

–

1

µA

V

_INH= 0 V

_OUT= V_S

side

T_j< 85 °C

–

15 µA

V

_INH= 0 V

_OUT= V_S

T_j= 150 °C

4.2.6 Reverse diode

forward-voltage low

side ¹⁾

V_SD(LS)

V

1.5

1.1

I_OUT= 8 A

–

0.9

0.8

0.7

T_j= -40 °C

T_j= 25 °C

T_j= 150 °C

0.9

1)

Due to active freewheeling, diode is conducting only for a few µs, depending on R_SR

Data Sheet

9

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.2.2

Switching Times

IN

t

t_dr(HS)t_r(HS)

t_df(HS)t_f(HS)

V_OUT

90%

∆V_OUT

10%

t

Figure 5

Definition of switching times high side (R_loadto GND)

IN

t

t_df(LS)t_f(LS)

t_r(LS)

t_dr(LS)

V_OUT

90%

∆V_OUT

10%

t

Figure 6

Definition of switching times low side (R_loadto VS)

Due to the timing differences for the rising and the falling edge there will be a slight

difference between the length of the input pulse and the length of the output pulse. It can

be calculated using the following formulas:

• ∆t_HS= (t_dr(HS)+ 0.5 t_r(HS)) - (t_df(HS)+ 0.5 t_f(HS)

)

• ∆t_LS= (t_df(LS)+ 0.5 t_f(LS)) - (t_dr(LS)+ 0.5 t_r(LS)).

Data Sheet

10

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.2.3

Power Stages - Dynamic Characteristics

-40 °C < T_j< 150 °C, V_S= 13.5 V, R_load= 4Ω (unless otherwise specified)

Pos. Parameter

Symbol

Limit Values

Unit Test Conditions

min. typ. max.

HIgh Side Switch Dynamic Characteristics

4.2.7 Rise-time of HS

t_r(HS)

µs

0.5

–

2

1

2

5

1.5

–

11

R

_SR= 0 Ω

_SR= 5.1 kΩ

_SR= 51 kΩ

4.2.8 Slew rate HS on

∆V_OUT

/

V/µs

µs

t_{r( HS)}

–

11

6

2

–

R

_SR= 0 Ω

_SR= 5.1 kΩ

_SR= 51 kΩ

4.2.9 Switch on delay time t_dr(HS)

HS

1.7

–

5.6

3.1

4.4

14

4.5

–

22.4

R

_SR= 0 Ω

_SR= 5.1 kΩ

_SR= 51 kΩ

4.2.10 Fall-time of HS

4.2.11 Slew rate HS off

t_f(HS)

µs

0.5

–

2

1

2

5

1.5

–

11

R

_SR= 0 Ω

_SR= 5.1 kΩ

_SR= 51 kΩ

-∆V_OUT

/

V/µs

µs

t_f(HS)

–

11

6

2

–

R

_SR= 0 Ω

_SR= 5.1 kΩ

_SR= 51 kΩ

4.2.12 Switch off delay time t_df(HS)

HS

1.2

–

4

2.4

3.4

10

3.6

–

16

R

_SR= 0 Ω

_SR= 5.1 kΩ

_SR= 51 kΩ

Data Sheet

11

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

-40 °C < T_j< 150 °C, V_S= 13.5 V, R_load= 4Ω (unless otherwise specified)

Pos. Parameter

Symbol

Limit Values

Unit Test Conditions

min. typ. max.

Low Side Switch Dynamic Characteristics

4.2.13 Rise-time of LS

t_r(LS)

µs

0.5

–

2

1

2

5

1.5

–

11

R

_SR= 0 Ω

_SR= 5.1 kΩ

_SR= 51 kΩ

4.2.14 Slew rate LS switch off ∆V_OUT

/

V/µs

µs

t_r(LS)

–

11

6

2

–

R

_SR= 0 Ω

_SR= 5.1 kΩ

_SR= 51 kΩ

4.2.15 Switch off delay time t_dr(LS)

LS

0.7

–

2

1.3

2.2

5

1.9

–

11

R

_SR= 0 Ω

_SR= 5.1 kΩ

_SR= 51 kΩ

4.2.16 Fall-time of LS

t_f(LS)

µs

0.5

–

2

1

2

5

1.5

–

11

R

_SR= 0 Ω

_SR= 5.1 kΩ

_SR= 51 kΩ

4.2.17 Slew rate LS switch on -∆V_OUT

/

V/µs

µs

t_f(LS)

–

11

6

2

–

R

_SR= 0 Ω

_SR= 5.1 kΩ

_SR= 51 kΩ

4.2.18 Switch on delay time t_df(LS)

LS

2.2

–

6.4

4

5.6

16

5.8

–

25.4

R

_SR= 0 Ω

_SR= 5.1 kΩ

_SR= 51 kΩ

Data Sheet

12

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.3

Protection Functions

The device provides integrated protection functions. These are designed to prevent IC

destruction under fault conditions described in the data sheet. Fault conditions are

considered as “outside” normal operating range. Protection functions are not to be used

for continuous or repetitive operation, with the exception of the current limitation

(Chapter 4.3.4). In a fault condition the BTS 7930B will apply the highest slew rate

possible independent of the connected slew rate resistor. Overvoltage, overtemperature

and overcurrent are indicated by a fault current I_IS(LIM)at the IS pin as described in the

paragraph “Status Flag Diagnosis With Current Sense Capability” on Page 17 and

Figure 10.

In the following the protection functions are listed in order of their priority. Overvoltage

lock out overrides all other error modes.

4.3.1

Overvoltage Lock Out

To assure a high immunity against overvoltages (e.g. load dump conditions) the device

shuts the lowside MOSFET off and turns the highside MOSFET on, if the supply voltage

is exceeding the over voltage protection level V_OV(OFF). The IC operates in normal mode

again with a hysteresis V_OV(HY)if the supply voltage decreases below the switch-on

voltage V_OV(ON). In H-bridge configuration, this behavior of the BTS 7930B will lead to

freewheeling in highside during over voltage.

4.3.2

Undervoltage Shut Down

To avoid uncontrolled motion of the driven motor at low voltages the device shuts off

(output is tri-state), if the supply voltage drops below the switch-off voltage V_UV(OFF). The

IC becomes active again with a hysteresis V_UV(HY)if the supply voltage rises above the

switch-on voltage V_UV(ON)

.

4.3.3 Overtemperature Protection

The BTS 7930B is protected against overtemperature by an integrated temperature

sensor. Overtemperature leads to a shut down of both output stages. This state is

latched until the device is reset by a low signal with a minimum length of t_resetat the INH

pin, provided that its temperature has decreased at least the thermal hysteresis ∆T in the

meantime.

Repetitive use of the overtemperature protection might reduce lifetime.

4.3.4

Current Limitation

The current in the bridge is measured in both switches. As soon as the current in forward

direction in one switch (high side or low side) is reaching the limit I_CLx, this switch is

deactivated and the other switch is activated for t_CLS. During that time all changes at the

Data Sheet

13

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

IN pin are ignored. However, the INH pin can still be used to switch both MOSFETs off.

After t_CLSthe switches return to their initial setting. The error signal at the IS pin is reset

after 2 * t_CLS. Unintentional triggering of the current limitation by short current spikes

(e.g. inflicted by EMI coming from the motor) is suppressed by internal filter circuitry. Due

to thresholds and reaction delay times of the filter circuitry the effective current limitation

level I_CLxdepends on the slew rate of the load current dI/dt as shown in Figure 8

I_L

t_CLS

I_CLx

I_CLx0

t

Figure 7

Timing Diagram Current Limitation (Inductive Load)

High Side Switch

Low SideSwitch

55

50

55

50

T = -40°C

j

T_j= 25°C

45

40

45

40

T_j= 150°C

T_j= -40°C

T_j= 150°C

T_j= 25°C

I_CLH0

I_CLL0

35

30

25

20

30

25

20

0

500

1000

1500

2000

0

500

1000

1500

2000

dI_L/dt [A/ms]

dI_L/dt[A/ms]

Figure 8

Current Limitation Level vs. Current Slew Rate dI/dt

Data Sheet

14

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

High Side Switch

Low Side Switch

50

A

45

T_j= -40°C

T_j= 25°C

40

I_CLL

I_CLH

T_j= 150°C

35

T = -40°C

j

T = 25°C

j

30

25

20

30

T = 150°C

j

25

20

4

6

8

10

12 14

16

18

20

V

4

6

8

10

12

14

16

18

20

V

V_S

Figure 9

Typical Current Limitation Detection Levels vs. Supply Voltage

In combination with a typical inductive load, such as a motor, this results in a switched

mode current limitation. That way of limiting the current has the advantage that the power

dissipation in the BTS 7930B is much smaller than by driving the MOSFETs in linear

mode. Therefore it is possible to use the current limitation for a short time without

exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current

during motor start up). However, the regular use of the current limitation is allowed as

long as the specified maximum junction temperature is not exceeded. Exceeding this

temperature can reduce the lifetime of the device.

4.3.5

Short Circuit Protection

The device is short circuit protected against

• output short circuit to ground

• output short circuit to supply voltage

• short circuit of load

The short circuit protection is realized by the previously described current limitation in

combination with the over-temperature shut down of the device

Data Sheet

15

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.3.6

Electrical Characteristics - Protection Functions

– 40 °C < T_j< 150 °C; 8 V < V_S< 18 V (unless otherwise specified)

Pos. Parameter

Symbol Limit Values

Unit Test Conditions

min. typ. max.

Under Voltage Shut Down

4.3.1 Switch-ON voltage

4.3.2 Switch-OFF voltage

4.3.3 ON/OFF hysteresis

Over Voltage Lock Out

4.3.4 Switch-ON voltage

4.3.5 Switch-OFF voltage

4.3.6 ON/OFF hysteresis

Current Limitation

V_UV(ON)

V_UV(OFF)4.0

V_UV(HY)

–

5.5

5.4

–

V

V_Sincreasing

V_Sdecreasing

–

0.2

V_OV(ON)27.8

V_OV(OFF)28.0

–

30

–

V

V_Sdecreasing

V_Sincreasing

–

V_OV(HY)

–

0.2

4.3.7 Current limitation

detection level high

side

I_CLH0

A

V_S=13.5 V

T_j= -40 °C

T_j= 25 °C

T_j= 150 °C

30

28

26

42

40

38

54

52

50

4.3.8 Current limitation

detection level low

side

I_CLL0

A

V_S=13.5V

T_j= -40 °C

T_j= 25 °C

T_j= 150 °C

20

19

18

32

31

30

43

42

41

Current Limitation Timing

4.3.9 Shut off time for HS

and LS

t_CLS

70

115 210 µs

V_S=13.5V

Thermal Shut Down

4.3.10 Thermal shut down

junction temperature

T_jSD

T_jSO

∆T

155 175 200 °C

–

4.3.11 Thermal switch on

junction temperature

150

–

190 °C

4.3.12 Thermal hysteresis

–

4

7

–

K

–

4.3.13 Reset pulse at INH pin t_reset

µs

(INH low)

Data Sheet

16

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.4

Control and Diagnostics

Input Circuit

4.4.1

The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with

hysteresis which control the integrated gate drivers for the MOSFETs. Setting the INH

pin to high enables the device. In this condition one of the two power switches is switched

on depending on the status of the IN pin. To deactivate both switches, the INH pin has

to be set to low. No external driver is needed. The BTS 7930B can be interfaced directly

to a microcontroller.

4.4.2

Dead Time Generation

In bridge applications it has to be assured that the highside and lowside MOSFET are

not conducting at the same time, connecting directly the battery voltage to GND. This is

assured by a circuit in the driver IC, generating a so called dead time between switching

off one MOSFET and switching on the other. The dead time generated in the driver IC is

automatically adjusted to the selected slew rate.

4.4.3

Adjustable Slew Rate

In order to optimize electromagnetic emission, the switching speed of the MOSFETs is

adjustable by an external resistor. The slew rate pin SR allows the user to optimize the

balance between emission and power dissipation within his own application by

connecting an external resistor R_SRto GND.

4.4.4

Status Flag Diagnosis With Current Sense Capability

The status pin IS is used as a combined current sense and error flag output. In normal

operation (current sense mode), a current source is connected to the status pin, which

delivers a current proportional to the forward load current flowing through the active high

side switch. If the high side switch is inactive or the current is flowing in the reverse

direction no current will be driven except for a marginal leakage current I_IS(LK). The

external resistor R_ISdetermines the voltage per output current. E.g. with the nominal

value of 6000 for the current sense ratio k_ILIS= I_L/ I_IS, a resistor value of R_IS= 1kΩ leads

to V_IS= (I_L/ 6 A)V. In case of a fault condition the status output is connected to a current

source which is independent of the load current and provides I_IS(lim). The maximum

voltage at the IS pin is determined by the choice of the external resistor and the supply

voltage. In case of current limitation the I_IS(lim)is activated for 2 * t_CLS

.

Data Sheet

17

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

Normal operation:

current sense mode

Fault condition:

error flag mode

VS

ESD-ZD

IS

I_IS~ I_Load

Sense

output

logic

V_IS

R_IS

R

IS

output

I_IS(lim)

logic

Figure 10

Sense current and fault current

Data Sheet

18

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.4.5

Truth Table

Device State

Inputs

Outputs

HSS LSS IS

Mode

INH

0

IN

X

0

Normal operation

OFF OFF

OFF ON

0

Stand-by mode

LSS active

1

ON

OFF CS

HSS active

Over-voltage (OV)

Under-voltage (UV)

X

OFF

1

Shut-down of LSS,

HSS activated,

error detected

X

0

X

OFF OFF

0

UV lockout

Overtemperature or

short circuit of HSS or

LSS

Stand-by mode, reset

of latch

1

X

1

0

OFF OFF

OFF ON

1

Shut-down with latch,

error detected

Current limitation mode

Switched mode, error

detected

ON

OFF

Switched mode, error

detected

Inputs:

Switches

Status Flag IS:

0 = Logic LOW

1 = Logic HIGH

X = 0 or 1

OFF = switched off

ON = switched on

CS = Current sense mode

1 = Logic HIGH (error)

Data Sheet

19

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Block Description and Characteristics

4.4.6

Electrical Characteristics - Control and Diagnostics

– 40 °C < T_j< 150 °C, 8 V < V_S< 18 V (unless otherwise specified)

Pos. Parameter

Symbol

Limit Values

Unit Test Conditions

min. typ. max.

Control Inputs (IN and INH)

4.4.1 High level voltage

INH, IN

V_INH(H)

V_IN(H)

–

1.75 2.15 V

–

V

1.6

2

4.4.2 Low level voltage

INH, IN

V_INH(L)

V_IN(L)

1.1

1.4

–

V

4.4.3 Input voltage

hysteresis

V_INHHY

V_INHY

–

350

200

–

mV

4.4.4 Input current

4.4.5 Input current

Current Sense

I_INH(H)

I_IN(H)

I_INH(L)

I_IN(L)

–

30

150 µA

125 µA

_IN= V_INH= 5.3 V

_IN= V_INH=0.4 V

–

25

10³

R

= 1 kΩ

4.4.6

Current sense ratio

in static on-condition

k

ILIS

IS

4.2

3.6

2.4

6

7.8

8.4

9.6

I = 15 A

L

k

_ILIS= I / I

I = 8 A

L

IS

L

I = 3 A

L

4.4.7 Maximum analog

sense current, sense

current in fault

I_IS(lim)

4

5

7

mA

µA

V_S= 13.5 V

R_IS= 1kΩ

condition

4.4.8 Isense leakage current I_ISL

–

1

V_IN= 0 V or

V_INH= 0 V

4.4.9 Isense leakage current, I_ISH

200 µA

V_IN= V_INH= 5 V

active high side switch

I_L= 0 A

Data Sheet

20

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Thermal Characteristics

5

Thermal Characteristics

Pos Parameter

Symbol

Limits

Unit Test Condition

min max

5.0.1 Thermal Resistance

R_thjc(LS)

–

4.8 K/W

Junction-Case, Low Side Switch

_thjc(LS)= ∆T_j(LS)/ P_v(LS)

5.0.2 Thermal Resistance

Junction-Case, High Side Switch

_thjc(HS)= ∆T_j(HS)/ P_v(HS)

5.0.3 Thermal Resistance

Junction-Case, both Switches

_thjc= max[∆T_j(HS), ∆T_j(LS)] /

(P_v(HS)+ P_v(LS)

R

R_thjc(HS)

1.6 K/W

R

R_thjc

2.4 K/W

R

)

5.0.4 Thermal Resistance

Junction-Ambient

R_thja

–

50 K/W 6cm²cooling

area

Note: Thermal characteristics are not subject to production test - specified by design.

Data Sheet

21

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Application

6

Application

6.1

Application Example

Microcontroller

Voltage Regulator

Reverse Polarity

Protection

I/O

Reset

Vdd

WO

RO

Q

TLE

I

µC

V_S

4278G

D

GND

SPD

Vss

I/O I/O I/O I/O I/O

50P03L

BTS 7930B

VS

INH

IN

INH

IN

M

OUT

GND

OUT

GND

IS

SR

High Current H-Bridge

Figure 11

6.2

Application Example: H-Bridge with two BTS 7930B

Layout Considerations

Due to the fast switching times for high currents, special care has to be taken to the PCB

layout. Stray inductances have to be minimized in the power bridge design as it is

necessary in all switched high power bridges. The BTS 7930B has no separate pin for

power ground and logic ground. Therefore it is recommended to assure that the offset

between the ground connection of the slew rate resistor, the current sense resistor and

ground pin of the device (GND / pin 1) is minimized. If the BTS 7930B is used in a H-

bridge or B6 bridge design, the voltage offset between the GND pins of the different

devices should be small as well.

A ceramic capacitor from VS to GND close to each device is recommended to provide

current for the switching phase via a low inductance path and therefore reducing noise

and ground bounce. A reasonable value for this capacitor would be about 470 nF.

The digital inputs need to be protected from excess currents (e.g. caused by induced

voltage spikes) by series resistors in the range of 10 kΩ.

Data Sheet

22

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Package Outlines P-TO-263-7

7

Package Outlines P-TO-263-7

P-TO-263-7

(Plastic Transistor Single Outline Package)

4.4

+0.1

1.3

9.9

7.5

6.6

-0.02

A

B

0.05

1)

0.1

17

0...0.15

2.4

+0.1

7 x 0.6

-0.03

0.1 B

6 x 1.27

M

0.25

AB

1) Shear and punch direction no burrs this surface

Back side, heatsink contour

All metal sufaces tin plated, except area of cut .

Footprint

10.8

0.47

0.8

8.42

HLGF1019

You can find all of our packages, sorts of packing and others in our

Infineon Internet Page “Products”: http://www.infineon.com/products.

Dimensions in mm

SMD = Surface Mounted Device

Data Sheet

23

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Revision History

8

Revision History

Version Date

Changes / Comments

Rev. 1.0 2005-08-03 Preliminary Data Sheet

Rev. 1.1 2006-04-26 Preliminary Data Sheet

• Layout changes (new Infineon logo, ordering code

removed)

• Operating range extended (page 7)

• Switching times adjusted (page 11/12)

• Rth values corrected (page 21)

• Application drawing updated

Rev. 2.0 2006-06-01 Data Sheet

• Figure 7 (page 14) updated

Data Sheet

24

2006-06-01

High Current PN Half Bridge

BTS 7930B

Revision History

Data Sheet

25

Rev. 2.0, 2006-06-01

High Current PN Half Bridge

BTS 7930B

Edition 2006-06-01

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

D-81541 München, Germany

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding

circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide.

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

Data Sheet

26

2006-06-01

h t t p : / / w w w . i n f i n e o n . c o m

Published by Infineon Technologies AG

型号:	BTS7930B
是否Rohs认证：	不符合
生命周期：	Obsolete
零件包装代码：	D2PAK
包装说明：	TO-263, SMSIP7H,.55,50TB
针数：	4
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
风险等级：	5.84
其他特性：	CONTAINS DC MOTOR DRIVER
模拟集成电路 - 其他类型：	BRUSHLESS DC MOTOR CONTROLLER
JESD-30 代码：	R-PSSO-G7
功能数量：	1
端子数量：	7
封装主体材料：	PLASTIC/EPOXY
封装代码：	TO-263
封装等效代码：	SMSIP7H,.55,50TB
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	8/18 V
认证状态：	Not Qualified
子类别：	Motion Control Electronics
最大供电电流 (Isup)：	3 mA
最大供电电压 (Vsup)：	28 V
最小供电电压 (Vsup)：	5.5 V
标称供电电压 (Vsup)：	18 V
表面贴装：	YES
技术：	MOS
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	9.2 mm
Base Number Matches：	1

电子百科

产品导航

产品型号BTS7930B的Datasheet PDF文件预览

BTS7930相关产品

BTS7930相关文章

IC37:专业IC行业平台