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产品型号BU4522DF的Datasheet PDF文件预览

Philips Semiconductors  
Objective specification  
Silicon Diffused Power Transistor  
BU4522DF  
GENERAL DESCRIPTION  
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated  
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television  
receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations  
resulting in a very low worst case dissipation.  
QUICK REFERENCE DATA  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1500  
800  
10  
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
A
ICM  
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Collector saturation current (Fig 17)  
-
25  
A
Ptot  
VCEsat  
ICsat  
Ths 25 ˚C  
-
-
45  
W
V
IC = 7 A; IB = 1.75 A  
f = 16 kHz  
3.0  
-
7
A
f = 64 kHz  
IF = 7.0 A  
6
-
A
VF  
tf  
Diode forward voltage  
Fall time  
-
2.2  
400  
t.b.f  
V
ICsat = 7 A; f = 16 kHz  
f = 64 kHz  
285  
t.b.f  
ns  
ns  
PINNING - SOT199  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
c
case  
base  
2
collector  
emitter  
b
3
Rbe  
case isolated  
1
2
3
e
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1500  
800  
10  
25  
6
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
A
ICM  
IB  
Collector current peak value  
Base current (DC)  
-
A
-
A
IBM  
Base current peak value  
Reverse base current peak value 1  
Total power dissipation  
-
9
A
-IBM  
Ptot  
Tstg  
Tj  
-
-
6
A
Ths 25 ˚C  
45  
150  
150  
W
˚C  
˚C  
Storage temperature  
Junction temperature  
-55  
-
1 Turn-off current.  
July 1998  
1
Rev 1.000  
Philips Semiconductors  
Objective specification  
Silicon Diffused Power Transistor  
BU4522DF  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Junction to heatsink  
Junction to ambient  
with heatsink compound  
in free air  
-
2.8  
-
K/W  
K/W  
35  
ISOLATION LIMITING VALUE & CHARACTERISTIC  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Visol  
Cisol  
Repetitive peak voltage from all R.H. 65 % ; clean and dustfree  
-
-
2500  
V
three terminals to external  
heatsink  
Capacitance from T2 to external f = 1 MHz  
heatsink  
-
22  
-
pF  
STATIC CHARACTERISTICS  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
ICES  
ICES  
Collector cut-off current 2  
VBE = 0 V; VCE = VCESMmax  
VBE = 0 V; VCE = VCESMmax  
Tj = 125 ˚C  
-
-
-
-
1.0  
2.0  
mA  
mA  
;
BVEBO  
Rbe  
VCEOsust  
Emitter-base breakdown voltage  
Base-emitter resistance  
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;  
L = 25 mH  
Collector-emitter saturation voltage IC = 7 A; IB = 1.75 A  
Base-emitter saturation voltage  
DC current gain  
IB = 600 mA  
7.5  
-
800  
13.5  
50  
-
-
-
-
V
V
VEB = 7.5 V  
VCEsat  
VBEsat  
hFE  
hFE  
VF  
-
0.85  
-
4.2  
-
-
0.94  
10  
5.8  
-
3.0  
1.03  
-
7.3  
2.2  
V
V
IC = 7 A; IB = 1.75 A  
IC = 1 A; VCE = 5 V  
IC = 7 A; VCE = 5 V  
IF = 7 A  
Diode forward voltage  
V
DYNAMIC CHARACTERISTICS  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
Switching times (16 kHz line  
deflection circuit)  
Turn-off storage time  
Turn-off fall time  
f = 16 kHz; ICsat = 7 A; IB1 = 1.4 A;  
(IB2 = -3.5 A)  
ts  
tf  
3.5  
285  
4.3  
400  
µs  
ns  
Switching times (64 kHz line  
deflection circuit)  
Turn-off storage time  
Turn-off fall time  
f = 64 kHz;  
ts  
tf  
t.b.f  
t.b.f  
t.b.f  
t.b.f  
µs  
ns  
2 Measured with half sine-wave voltage (curve tracer).  
July 1998  
2
Rev 1.000  
Philips Semiconductors  
Objective specification  
Silicon Diffused Power Transistor  
BU4522DF  
MECHANICAL DATA  
Dimensions in mm  
15.3 max  
5.2 max  
Net Mass: 5.5 g  
3.1  
3.3  
0.7  
7.3  
3.2  
o
45  
6.2  
5.8  
21.5  
max  
seating  
plane  
3.5 max  
not tinned  
3.5  
15.7  
min  
1
2
3
1.2  
1.0  
0.7 max  
2.0  
2.1 max  
M
0.4  
5.45  
5.45  
Fig.1. SOT199; The seating plane is electrically isolated from all terminals.  
Notes  
1. Refer to mounting instructions for F-pack envelopes.  
2. Epoxy meets UL94 V0 at 1/8".  
July 1998  
3
Rev 1.000  
Philips Semiconductors  
Objective specification  
Silicon Diffused Power Transistor  
BU4522DF  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1998  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
July 1998  
4
Rev 1.000  
配单直通车
BU4522DF产品参数
型号:BU4522DF
生命周期:Active
零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3
制造商包装代码:SOT199
Reach Compliance Code:compliant
风险等级:5.74
其他特性:BUILT-IN BIAS RESISTOR
外壳连接:ISOLATED
最大集电极电流 (IC):10 A
集电极-发射极最大电压:800 V
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):4.2
JESD-30 代码:R-PSFM-T3
JESD-609代码:e3
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
极性/信道类型:NPN
最大功率耗散 (Abs):45 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:NO
端子面层:TIN
端子形式:THROUGH-HOLE
端子位置:SINGLE
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
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