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产品型号BUT11的概述

芯片BUT11的概述 BUT11是一种广泛使用的高功率场效应管（MOSFET），适合在各种电源和负载控制应用中使用。它具有高开关速度和良好的导电性能，使其成为多种电路设计中的重要组件。BUT11通常用于电动机驱动、自动化控制和开关电源等应用领域。芯片BUT11的详细参数 BUT11的主要电气参数包括： - 最大的漏极-源极电压（V_DS）：50V - 最大的漏极电流（I_D）：10A - 栅极阈值电压（V_GS(th)）：2-4V - 最大功耗（P_D）：40W - 导通电阻（R_DS(on)）：最大为0.25Ω - 工作温度范围（T_j）：-55至+150°C 这些参数使BUT11在各种高电流和高电压应用中表现出色。其设计能够承受较大的电流和电压波动，这使其成为电路设计中的理想选择。芯片BUT11的厂家、包装与封装 BUT11的制造商包括多个知名的半导体企业，如STMicroe...

产品型号BUT11的Datasheet PDF文件预览

BUT11

NPN SILICON POWER TRANSISTOR

MAY 1989 - REVISED MARCH 1997

●

Rugged Triple-Diffused Planar Construction

100 W at 25°C Case Temperature

TO-220 PACKAGE

(TOP VIEW)

5 A Continuous Collector Current

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

Collector-base voltage (I_E= 0)

Collector-emitter voltage (V_BE= 0)

Collector-emitter voltage (I_B= 0)

Emitter-base voltage

V_CBO

V_CES

V_CEO

V_EBO

I_C

850

400

Continuous collector current

Peak collector current (see Note 1)

I_CM

Continuous device dissipation at (or below) 25°C case temperature

Operating junction temperature range

P_tot

100

°C

T_j

-65 to +150

Storage temperature range

T_stg

NOTE 1: This value applies for t_p£ 10 ms, duty cycle £ 2%.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

BUT11

NPN SILICON POWER TRANSISTOR

MAY 1989 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-emitter

sustaining voltage

Collector-emitter

cut-off current

Emitter cut-off

current

V_CEO(sus)

I_CES

I_C

0.1 A

L = 25 mH

_BE= 0

(see Note 2)

T_C= 125°C

400

V_CE= 850 V

µA

V_BE= 0

500

I_EBO

V_EB

V_CE

10 V

5 V

I_C= 0

Forward current

transfer ratio

h_FE

I_C= 0.5 A

(see Notes 3 and 4)

Collector-emitter

saturation voltage

Base-emitter

V_CE(sat)

V_BE(sat)

I_B

0.6 A

I_C

3 A

1.5

1.3

saturation voltage

Current gain

f_t

V_CE

V_CB

10 V

20 V

I_C= 0.5 A

I_E= 0

f = 1 MHz

f = 0.1 MHz

MHz

bandwidth product

Output capacitance

C_ob

110

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, t_p= 300 µs, duty cycle £ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics

PARAMETER

Junction to case thermal resistance

MIN

TYP

MAX

UNIT

R_qJC

1.25

°C/W

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

†

PARAMETER

TEST CONDITIONS

_B(on)= 0.6A

(see Figures 1 and 2)

_B(on)= 0.6A

T_C= 100°C

MIN

TYP

MAX

UNIT

t_sv

t_fi

Voltage storage time

Current fall time

I_C= 3 A

V_BE(off)= -5 V

_BE(off)= -5 V

1.4

150

1.5

µs

V_CC= 50 V

I_C= 3 A

t_sv

t_fi

Voltage storage time

Current fall time

V_CC= 50 V

300

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

P R O D U C T

I N F O R M A T I O N

BUT11

NPN SILICON POWER TRANSISTOR

MAY 1989 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

+5V

D45H11

BY205-400

(on)

1 pF

180

V Gen

2N2222

1 k

BY205-400

0.02

TUT

1 k

= 400 V

clamp

+5V

5X BY205-400

D44H11

BY205-400

270

1 k

2N2904

Adjust pw to obtain I_C

For I_C< 6 A V_CC= 50 V

BE(off)

For I_C³ 6 A V_CC= 100 V

100

Figure 1. Inductive-Load Switching Test Circuit

B(on)

A (90%)

Base Current

A - B = t_sv

B - C = t_rv

D - E = t_fi

E - F = t_ti

B - E = t_xo

90%

10%

Collector Voltage

D (90%)

E (10%)

F (2%)

Collector Current

C(on)

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t_r< 15 ns, R_in> 10 W, C_in< 11.5 pF.

B. Resistors must be noninductive types.

Figure 2. Inductive-Load Switching Waveforms

P R O D U C T

I N F O R M A T I O N

BUT11

NPN SILICON POWER TRANSISTOR

MAY 1989 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

SAP791AB

100

1·0

0.1

t_p= 10 ms

t_p= 100 ms

t_p= 1 ms

t_p= 10 ms

DC Operation

0·01

1·0

100

1000

V_CE- Collector-Emitter Voltage - V

Figure 3.

P R O D U C T

I N F O R M A T I O N

BUT11

NPN SILICON POWER TRANSISTOR

MAY 1989 - REVISED MARCH 1997

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

TO220

4,70

4,20

10,4

10,0

1,32

1,23

3,96

3,71

2,95

2,54

see Note B

6,6

6,0

15,90

14,55

see Note C

6,1

3,5

14,1

12,7

1,70

1,07

0,97

0,61

2,74

2,34

0,64

0,41

2,90

2,40

5,28

4,88

VERSION 1

VERSION 2

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTES: A. The centre pin is in electrical contact with the mounting tab.

B. Mounting tab corner profile according to package version.

C. Typical fixing hole centre stand off height according to package version.

Version 1, 18.0 mm. Version 2, 17.6 mm.

MDXXBE

P R O D U C T

I N F O R M A T I O N

BUT11

NPN SILICON POWER TRANSISTOR

MAY 1989 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any

semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the

information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI

deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement

of patents or services described herein. Nor is any license, either express or implied, granted under any patent

right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,

machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

P R O D U C T

I N F O R M A T I O N

BUT11相关文章

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BUT11产品参数

型号:	BUT11
是否无铅：	含铅
生命周期：	Active
零件包装代码：	TO-220AB
包装说明：	TO-220, 3 PIN
针数：	3
Reach Compliance Code：	unknown
风险等级：	5.21
最大集电极电流 (IC)：	5 A
集电极-发射极最大电压：	400 V
配置：	SINGLE
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
湿度敏感等级：	NOT APPLICABLE
元件数量：	1
端子数量：	3
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT APPLICABLE
极性/信道类型：	NPN
认证状态：	COMMERCIAL
表面贴装：	NO
端子面层：	MATTE TIN
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT APPLICABLE
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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