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    产品型号BUK7226-100B的Datasheet PDF文件预览

    BUK7226-100B  
    TrenchMOS™ standard level FET  
    Rev. 01 — 10 December 2002  
    Objective data  
    M3D300  
    1. Product profile  
    1.1 Description  
    N-channel enhancement mode field-effect power transistor in a plastic package using  
    Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very  
    low on-state resistance.  
    Product availability:  
    BUK7226-100B in SOT428 (D-PAK)  
    1.2 Features  
    ■ TrenchMOSTM technology  
    ■ 175 °C rated  
    ■ Q101 compliant  
    ■ Standard level compatible  
    1.3 Applications  
    ■ Automotive systems  
    ■ 12 V, 24 V and 42 V loads  
    ■ Motors, lamps and solenoids  
    ■ General purpose power switching  
    1.4 Quick reference data  
    ■ EDS(AL)S ≤ 147 mJ  
    ■ ID ≤ 48 A  
    ■ RDSon = 22 mΩ (typ)  
    ■ Ptot ≤ 150 W  
    2. Pinning information  
    Table 1:  
    Pinning - SOT428 (D-PAK), simplified outline and symbol  
    Pin Description  
    Simplified outline  
    Symbol  
    1
    2
    3
    gate (g)  
    d
    mb  
    [1]  
    drain (d)  
    source (s)  
    g
    mb mounting base;  
    connected to  
    s
    MBB076  
    drain (d)  
    2
    1
    3
    Top view  
    MBK091  
    SOT428 (D-PAK)  
    [1] It is not possible to make connection to pin 2 of the SOT428 package.  
    BUK7226-100B  
    TrenchMOS™ standard level FET  
    Philips Semiconductors  
    3. Limiting values  
    Table 2:  
    Limiting values  
    In accordance with the Absolute Maximum Rating System (IEC 60134).  
    Symbol  
    VDS  
    Parameter  
    Conditions  
    Min  
    Max  
    100  
    100  
    ±20  
    48  
    Unit  
    V
    drain-source voltage (DC)  
    drain-gate voltage (DC)  
    gate-source voltage (DC)  
    drain current (DC)  
    -
    -
    -
    -
    VDGR  
    VGS  
    RGS = 20 kΩ  
    V
    V
    ID  
    Tmb = 25 °C; VGS = 10 V;  
    A
    Figure 2 and 3  
    T
    mb = 100 °C; VGS = 10 V; Figure 2  
    -
    -
    34  
    A
    A
    IDM  
    peak drain current  
    Tmb = 25 °C; pulsed; tp ≤ 10 µs;  
    192  
    Figure 3  
    Ptot  
    Tstg  
    Tj  
    total power dissipation  
    storage temperature  
    junction temperature  
    Tmb = 25 °C; Figure 1  
    -
    150  
    W
    −55  
    −55  
    +175  
    +175  
    °C  
    °C  
    Source-drain diode  
    IDR  
    reverse drain current (DC)  
    peak reverse drain current  
    Tmb = 25 °C  
    -
    -
    48  
    A
    A
    IDRM  
    Tmb = 25 °C; pulsed; tp ≤ 10 µs  
    192  
    Avalanche ruggedness  
    EDS(AL)S  
    non-repetitive avalanche energy  
    unclamped inductive load; ID = 48 A;  
    -
    147  
    mJ  
    VDS ≤ 100 V; VGS = 10 V;  
    RGS = 50 Ω; starting Tj = 25 °C  
    9397 750 10802  
    © Koninklijke Philips Electronics N.V. 2002. All rights reserved.  
    Objective data  
    Rev. 01 — 10 December 2002  
    2 of 12  
    BUK7226-100B  
    TrenchMOS™ standard level FET  
    Philips Semiconductors  
    03nl33  
    03na19  
    50  
    120  
    I
    D
    (A)  
    P
    der  
    (%)  
    40  
    80  
    40  
    0
    30  
    20  
    10  
    0
    0
    50  
    100  
    150  
    200  
    0
    50  
    100  
    150  
    200  
    (°C)  
    T
    ( C)  
    °
    T
    mb  
    mb  
    VGS ≥ 10 V  
    Ptot  
    Pder  
    =
    × 100%  
    -----------------------  
    P
    °
    tot(25 C)  
    Fig 1. Normalized total power dissipation as a  
    function of mounting base temperature.  
    Fig 2. Continuous drain current as a function of  
    mounting base temperature.  
    03nl31  
    3
    10  
    I
    D
    (A)  
    limit R  
    DSon  
    = V /I  
    DS D  
    2
    10  
    t
    p
    = 10 s  
    µ
    100  
    s
    µ
    10  
    DC  
    1 ms  
    10 ms  
    100 ms  
    1
    2
    3
    10  
    1
    10  
    10  
    V
    (V)  
    DS  
    Tmb = 25 °C; IDM single pulse.  
    Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.  
    9397 750 10802  
    © Koninklijke Philips Electronics N.V. 2002. All rights reserved.  
    Objective data  
    Rev. 01 — 10 December 2002  
    3 of 12  
    BUK7226-100B  
    TrenchMOS™ standard level FET  
    Philips Semiconductors  
    4. Thermal characteristics  
    Table 3:  
    Symbol Parameter  
    Rth(j-a) thermal resistance from junction to  
    ambient  
    Thermal characteristics  
    Conditions  
    Min  
    Typ  
    Max Unit  
    -
    71.4  
    -
    K/W  
    Rth(j-mb) thermal resistance from junction to  
    mounting base  
    Figure 4  
    -
    0.45 1.0  
    K/W  
    4.1 Transient thermal impedance  
    03nl34  
    1
    δ = 0.5  
    Z
    th(j-mb)  
    (K/W)  
    0.2  
    0.1  
    -1  
    10  
    0.05  
    0.02  
    -2  
    10  
    t
    p
    P
    δ =  
    single shot  
    T
    t
    t
    p
    T
    -3  
    10  
    -6  
    10  
    -5  
    10  
    -4  
    10  
    -3  
    10  
    -2  
    10  
    -1  
    10  
    1
    t
    (s)  
    p
    Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.  
    9397 750 10802  
    © Koninklijke Philips Electronics N.V. 2002. All rights reserved.  
    Objective data  
    Rev. 01 — 10 December 2002  
    4 of 12  
    BUK7226-100B  
    TrenchMOS™ standard level FET  
    Philips Semiconductors  
    5. Characteristics  
    Table 4:  
    Tj = 25 °C unless otherwise specified.  
    Symbol Parameter  
    Static characteristics  
    V(BR)DSS drain-source breakdown  
    voltage  
    Characteristics  
    Conditions  
    Min  
    Typ  
    Max  
    Unit  
    ID = 0.25 mA; VGS = 0 V  
    Tj = 25 °C  
    100  
    89  
    -
    -
    -
    -
    V
    V
    Tj = −55 °C  
    VGS(th)  
    gate-source threshold voltage ID = 1 mA; VDS = VGS  
    Figure 9  
    Tj = 25 °C  
    ;
    2
    1
    -
    3
    -
    4
    V
    V
    V
    Tj = 175 °C  
    Tj = −55 °C  
    -
    -
    4.4  
    IDSS  
    drain-source leakage current VDS = 100 V; VGS = 0 V  
    Tj = 25 °C  
    Tj = 175 °C  
    -
    -
    -
    0.02  
    1
    µA  
    µA  
    nA  
    -
    500  
    100  
    IGSS  
    gate-source leakage current VGS = ±20 V; VDS = 0 V  
    2
    RDSon  
    drain-source on-state  
    resistance  
    VGS = 10 V; ID = 25 A;  
    Figure 7 and 8  
    Tj = 25 °C  
    -
    -
    22  
    -
    26  
    65  
    mΩ  
    mΩ  
    Tj = 175 °C  
    Dynamic characteristics  
    Qg(tot)  
    Qgs  
    Qgd  
    Ciss  
    Coss  
    Crss  
    td(on)  
    tr  
    total gate charge  
    gate-source charge  
    gate-drain (Miller) charge  
    input capacitance  
    output capacitance  
    reverse transfer capacitance  
    turn-on delay time  
    rise time  
    VGS = 10V; VDS = 80 V;  
    ID = 25 A; Figure 14  
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    37  
    -
    nC  
    nC  
    nC  
    pF  
    pF  
    pF  
    nS  
    nS  
    nS  
    nS  
    nH  
    9
    -
    13  
    -
    VGS = 0 V; VDS = 25 V;  
    f = 1 MHz; Figure 12  
    2092  
    241  
    102  
    18  
    2789  
    289  
    140  
    VDS = 25 V; RL = 1.0 Ω;  
    VGS = 10 V; RG = 10 Ω  
    -
    -
    -
    -
    -
    99  
    td(off)  
    tf  
    turn-off delay time  
    fall time  
    50  
    20  
    Ld  
    internal drain inductance  
    measured from drain to  
    centre of die  
    2.5  
    Ls  
    internal source inductance  
    measured from source lead  
    to source bond pad  
    -
    -
    7.5  
    -
    nH  
    V
    Source-drain diode  
    VSD  
    source-drain (diode forward) IS = 16 A; VGS = 0 V;  
    0.85  
    1.2  
    voltage  
    Figure 15  
    trr  
    reverse recovery time  
    recovered charge  
    IS = 20 A; dIS/dt = −100 A/µs  
    VGS = −10 V; VDS = 30 V  
    -
    -
    94  
    -
    -
    ns  
    Qr  
    114  
    nC  
    9397 750 10802  
    © Koninklijke Philips Electronics N.V. 2002. All rights reserved.  
    Objective data  
    Rev. 01 — 10 December 2002  
    5 of 12  
    BUK7226-100B  
    TrenchMOS™ standard level FET  
    Philips Semiconductors  
    03nl28  
    03nl27  
    140  
    35  
    Label is V  
    (V)  
    GS  
    I
    D
    9
    (A)  
    R
    20  
    12  
    10  
    8.5  
    8
    DSon  
    (mΩ)  
    105  
    7.5  
    7
    30  
    25  
    20  
    70  
    35  
    0
    6.5  
    6
    5.5  
    5
    4.5  
    0
    2
    4
    6
    8
    10  
    (V)  
    5
    10  
    15  
    20  
    V
    (V)  
    GS  
    V
    DS  
    Tj = 25 °C; tp = 300 µs  
    Tj = 25 °C; ID = 25 A  
    Fig 5. Output characteristics: drain current as a  
    function of drain-source voltage; typical values.  
    Fig 6. Drain-source on-state resistance as a function  
    of gate-source voltage; typical values.  
    03nl29  
    03ng41  
    60  
    2.5  
    Label is V  
    (V)  
    6
    R
    GS  
    DSon  
    a
    2
    (mΩ)  
    6.5  
    7
    8
    10 20  
    50  
    40  
    30  
    20  
    10  
    1.5  
    1
    0.5  
    0
    0
    35  
    70  
    105  
    140  
    -60  
    0
    60  
    120  
    180  
    I
    (A)  
    D
    T (ºC)  
    j
    Tj = 25 °C; tp = 300µs  
    RDSon  
    a =  
    ----------------------------  
    RDSon(25 C)  
    °
    Fig 7. Drain-source on-state resistance as a function  
    of drain current; typical values.  
    Fig 8. Normalized drain-source on-state resistance  
    factor as a function of junction temperature.  
    9397 750 10802  
    © Koninklijke Philips Electronics N.V. 2002. All rights reserved.  
    Objective data  
    Rev. 01 — 10 December 2002  
    6 of 12  
    BUK7226-100B  
    TrenchMOS™ standard level FET  
    Philips Semiconductors  
    03aa32  
    03aa35  
    -1  
    -2  
    -3  
    -4  
    -5  
    -6  
    5
    10  
    I
    V
    D
    (A)  
    GS(th)  
    (V)  
    4
    10  
    max  
    typ  
    min  
    typ  
    max  
    3
    2
    1
    0
    10  
    10  
    10  
    10  
    min  
    -60  
    0
    60  
    120  
    180  
    0
    2
    4
    6
    °
    T ( C)  
    V
    (V)  
    j
    GS  
    ID = 1 mA; VDS = VGS  
    Tj = 25 °C; VDS = VGS  
    Fig 9. Gate-source threshold voltage as a function of  
    junction temperature.  
    Fig 10. Sub-threshold drain current as a function of  
    gate-source voltage.  
    03nl25  
    03nl30  
    40  
    3000  
    C
    iss  
    g
    (S)  
    fs  
    C
    (pF)  
    30  
    2000  
    C
    oss  
    20  
    10  
    0
    1000  
    C
    rss  
    0
    -1  
    2
    10  
    0
    20  
    40  
    60  
    10  
    1
    10  
    I
    (A)  
    D
    V
    (V)  
    DS  
    Tj = 25 °C; VDS = 25 V  
    VGS = 0 V; f = 1 MHz  
    Fig 11. Forward transconductance as a function of  
    drain current; typical values.  
    Fig 12. Input, output and reverse transfer capacitances  
    as a function of drain-source voltage; typical  
    values.  
    9397 750 10802  
    © Koninklijke Philips Electronics N.V. 2002. All rights reserved.  
    Objective data  
    Rev. 01 — 10 December 2002  
    7 of 12  
    BUK7226-100B  
    TrenchMOS™ standard level FET  
    Philips Semiconductors  
    03nl26  
    03nl24  
    100  
    10  
    V
    GS  
    (V)  
    I
    D
    (A)  
    8
    6
    4
    2
    0
    75  
    V
    = 14 V  
    V
    = 80 V  
    DD  
    DD  
    50  
    25  
    T = 175 C  
    T = 25 C  
    °
    °
    j
    j
    0
    0
    2
    4
    6
    8
    0
    10  
    20  
    30  
    40  
    V
    (V)  
    Q
    (nC)  
    GS  
    G
    VDS = 25 V  
    Tj = 25 °C; ID = 25 A  
    Fig 13. Transfer characteristics: drain current as a  
    function of gate-source voltage; typical values.  
    Fig 14. Gate-source voltage as a function of turn-on  
    gate charge; typical values.  
    03nl23  
    100  
    I
    S
    (A)  
    75  
    50  
    25  
    T = 175 C  
    T = 25 C  
    °
    °
    j
    j
    0
    0.0  
    0.3  
    0.6  
    0.9  
    1.2  
    V
    (V)  
    SD  
    VGS = 0 V  
    Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.  
    9397 750 10802  
    © Koninklijke Philips Electronics N.V. 2002. All rights reserved.  
    Objective data  
    Rev. 01 — 10 December 2002  
    8 of 12  
    BUK7226-100B  
    TrenchMOS™ standard level FET  
    Philips Semiconductors  
    6. Package outline  
    Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads  
    (one lead cropped)  
    SOT428  
    seating plane  
    y
    A
    A
    E
    A
    2
    A
    b
    E
    1
    1
    2
    mounting  
    base  
    D
    1
    D
    H
    E
    L
    2
    2
    L
    1
    L
    1
    3
    b
    b
    w
    M
    A
    c
    1
    e
    e
    1
    0
    10  
    20 mm  
    scale  
    DIMENSIONS (mm are the original dimensions)  
    (1)  
    D
    L
    y
    1
    1
    A
    A
    A
    b
    D
    E
    E
    H
    UNIT  
    b
    b
    c
    e
    e
    1
    L
    L
    w
    2
    1
    2
    1
    E
    1
    2
    max.  
    min.  
    min.  
    0.65  
    0.45  
    0.89  
    0.71  
    0.9  
    0.5  
    2.38  
    2.22  
    0.93  
    0.73  
    1.1  
    0.9  
    5.46  
    5.26  
    0.4 6.22  
    0.2 5.98  
    6.73  
    6.47  
    10.4 2.95  
    9.6  
    2.55  
    4.81  
    4.45  
    mm  
    4.57  
    0.2  
    0.2  
    4.0  
    2.285  
    0.5  
    Note  
    1. Measured from heatsink back to lead.  
    REFERENCES  
    JEDEC  
    EUROPEAN  
    PROJECTION  
    OUTLINE  
    VERSION  
    ISSUE DATE  
    IEC  
    JEITA  
    99-09-13  
    01-12-11  
    SOT428  
    TO-252  
    SC-63  
    Fig 16. SOT428 (D-PAK)  
    9397 750 10802  
    © Koninklijke Philips Electronics N.V. 2002. All rights reserved.  
    Objective data  
    Rev. 01 — 10 December 2002  
    9 of 12  
    BUK7226-100B  
    TrenchMOS™ standard level FET  
    Philips Semiconductors  
    7. Revision history  
    Table 5:  
    Revision history  
    CPCN  
    Rev Date  
    Description  
    01 20021210  
    -
    Objective data (9397 750 10802)  
    9397 750 10802  
    © Koninklijke Philips Electronics N.V. 2002. All rights reserved.  
    Objective data  
    Rev. 01 — 10 December 2002  
    10 of 12  
    BUK7226-100B  
    TrenchMOS™ standard level FET  
    Philips Semiconductors  
    8. Data sheet status  
    Level Data sheet status[1]  
    Product status[2][3]  
    Definition  
    I
    Objective data  
    Development  
    This data sheet contains data from the objective specification for product development. Philips  
    Semiconductors reserves the right to change the specification in any manner without notice.  
    II  
    Preliminary data  
    Qualification  
    This data sheet contains data from the preliminary specification. Supplementary data will be published  
    at a later date. Philips Semiconductors reserves the right to change the specification without notice, in  
    order to improve the design and supply the best possible product.  
    III  
    Product data  
    Production  
    This data sheet contains data from the product specification. Philips Semiconductors reserves the  
    right to make changes at any time in order to improve the design, manufacturing and supply. Relevant  
    changes will be communicated via a Customer Product/Process Change Notification (CPCN).  
    [1]  
    [2]  
    Please consult the most recently issued data sheet before initiating or completing a design.  
    The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at  
    URL http://www.semiconductors.philips.com.  
    [3]  
    For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
    customers using or selling these products for use in such applications do so  
    at their own risk and agree to fully indemnify Philips Semiconductors for any  
    damages resulting from such application.  
    9. Definitions  
    Short-form specification — The data in a short-form specification is  
    extracted from a full data sheet with the same type number and title. For  
    detailed information see the relevant data sheet or data handbook.  
    Right to make changes — Philips Semiconductors reserves the right to  
    make changes in the products - including circuits, standard cells, and/or  
    software - described or contained herein in order to improve design and/or  
    performance. When the product is in full production (status ‘Production’),  
    relevant changes will be communicated via a Customer Product/Process  
    Change Notification (CPCN). Philips Semiconductors assumes no  
    responsibility or liability for the use of any of these products, conveys no  
    licence or title under any patent, copyright, or mask work right to these  
    products, and makes no representations or warranties that these products are  
    free from patent, copyright, or mask work right infringement, unless otherwise  
    specified.  
    Limiting values definition — Limiting values given are in accordance with  
    the Absolute Maximum Rating System (IEC 60134). Stress above one or  
    more of the limiting values may cause permanent damage to the device.  
    These are stress ratings only and operation of the device at these or at any  
    other conditions above those given in the Characteristics sections of the  
    specification is not implied. Exposure to limiting values for extended periods  
    may affect device reliability.  
    Application information — Applications that are described herein for any  
    of these products are for illustrative purposes only. Philips Semiconductors  
    make no representation or warranty that such applications will be suitable for  
    the specified use without further testing or modification.  
    11. Trademarks  
    TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.  
    10. Disclaimers  
    Life support — These products are not designed for use in life support  
    appliances, devices, or systems where malfunction of these products can  
    reasonably be expected to result in personal injury. Philips Semiconductors  
    Contact information  
    For additional information, please visit http://www.semiconductors.philips.com.  
    For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.  
    Fax: +31 40 27 24825  
    © Koninklijke Philips Electronics N.V. 2002. All rights reserved.  
    11 of 12  
    9397 750 10802  
    Objective data  
    Rev. 01 — 10 December 2002  
    BUK7226-100B  
    TrenchMOS™ standard level FET  
    Philips Semiconductors  
    Contents  
    1
    Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
    Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
    Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
    Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
    Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
    1.1  
    1.2  
    1.3  
    1.4  
    2
    Pinning information. . . . . . . . . . . . . . . . . . . . . . 1  
    Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
    Thermal characteristics. . . . . . . . . . . . . . . . . . . 4  
    Transient thermal impedance . . . . . . . . . . . . . . 4  
    Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
    Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
    Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
    Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11  
    Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
    Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
    Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
    3
    4
    4.1  
    5
    6
    7
    8
    9
    10  
    11  
    © Koninklijke Philips Electronics N.V. 2002.  
    Printed in The Netherlands  
    All rights are reserved. Reproduction in whole or in part is prohibited without the prior  
    written consent of the copyright owner.  
    The information presented in this document does not form part of any quotation or  
    contract, is believed to be accurate and reliable and may be changed without notice. No  
    liability will be accepted by the publisher for any consequence of its use. Publication  
    thereof does not convey nor imply any license under patent- or other industrial or  
    intellectual property rights.  
    Date of release: 10 December 2002  
    Document order number: 9397 750 10802  
    配单直通车
    BUK7226-100B产品参数
    型号:BUK7226-100B
    生命周期：Obsolete
    零件包装代码：TO-252
    包装说明：PLASTIC, SC-63, DPAK-3
    针数：3
    Reach Compliance Code：compliant
    ECCN代码：EAR99
    风险等级：5.84
    雪崩能效等级（Eas）：147 mJ
    外壳连接：DRAIN
    配置：SINGLE WITH BUILT-IN DIODE
    最小漏源击穿电压：100 V
    最大漏极电流 (Abs) (ID)：48 A
    最大漏极电流 (ID)：48 A
    最大漏源导通电阻：0.026 Ω
    FET 技术：METAL-OXIDE SEMICONDUCTOR
    JEDEC-95代码：TO-252
    JESD-30 代码：R-PSSO-G2
    元件数量：1
    端子数量：2
    工作模式：ENHANCEMENT MODE
    最高工作温度：175 °C
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：SMALL OUTLINE
    极性/信道类型：N-CHANNEL
    最大功率耗散 (Abs)：150 W
    最大脉冲漏极电流 (IDM)：192 A
    认证状态：Not Qualified
    子类别：FET General Purpose Power
    表面贴装：YES
    端子形式：GULL WING
    端子位置：SINGLE
    晶体管应用：SWITCHING
    晶体管元件材料：SILICON
    Base Number Matches：1
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