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产品型号BYG21的Datasheet PDF文件预览

BYG21  
Vishay Telefunken  
Fast Silicon Mesa SMD Rectifier  
Features  
Glass passivated junction  
Low reverse current  
Soft recovery characteristics  
Fast reverse recovery time  
Good switching characteristics  
Wave and reflow solderable  
15 811  
Applications  
Surface mounting  
Fast rectifier  
Freewheeling diodes in SMPS and converters  
Snubber diodes  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
BYG21K  
BYG21M V =V  
Symbol  
Value  
800  
1000  
30  
Unit  
V
V
V =V  
R
RRM  
RRM  
R
Peak forward surge current  
t =10ms,  
I
A
p
FSM  
half sinewave  
Average forward current  
Junction and storage  
temperature range  
I
1.5  
–55...+150  
A
C
FAV  
T =T  
j
stg  
Pulse energy in avalanche mode,  
non repetitive  
I
=1A, T =25 C  
E
R
20  
mJ  
(BR)R  
j
(inductive load switch off)  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction lead  
Junction ambient mounted on epoxy–glass hard tissue  
Test Conditions  
Symbol Value  
Unit  
K/W  
K/W  
K/W  
K/W  
T =const.  
L
R
25  
thJL  
thJA  
thJA  
thJA  
R
R
R
150  
125  
100  
2
mounted on epoxy–glass hard tissue, 50mm 35 m Cu  
2
mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu  
2
3
Document Number 86010  
Rev. 3, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  
BYG21  
Vishay Telefunken  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol Min  
Typ Max Unit  
Forward voltage  
I =1A  
V
V
1.5  
1.6  
1
V
V
A
F
F
F
I =1.5A  
F
Reverse current  
V =V  
V =V  
R
I
I
R
RRM  
RRM  
R
, T =100 C  
10  
A
j
R
Reverse recovery time I =0.5A, I =1A, i =0.25A  
t
rr  
120  
ns  
F
R
R
Characteristics (Tj = 25 C unless otherwise specified)  
100  
100  
10  
10  
75°C  
1
1
25°C  
V =V  
R
T =125°C  
j
R RM  
0.1  
0.01  
0.1  
0.01  
200  
4
0
40  
80  
120  
160  
0
1
2
3
94 9347  
T – Junction Temperature ( °C )  
j
94 9348  
V
– Forward Voltage ( V )  
F
Figure 1. Typ. Reverse Current vs. Junction Temperature  
Figure 3. Typ. Forward Current vs. Forward Voltage  
600  
2.0  
1.6  
T
=125°C  
amb  
500  
400  
300  
200  
100  
0
100°C  
75°C  
50°C  
25°C  
R
=25K/W  
thJA  
1.2  
0.8  
0.4  
0
100K/W  
125K/W  
80  
150K/W  
40  
I =0.5A, i =0.125A  
R
R
200  
1.0  
0
120  
160  
0
0.2  
0.4  
I – Forward Current ( A )  
F
0.6  
0.8  
94 9345  
T
amb  
– Ambient Temperature ( °C )  
94 9349  
Figure 2. Max. Average Forward Current vs.  
Ambient Temperature  
Figure 4. Max. Reverse Recovery Time vs.  
Forward Current  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 86010  
Rev. 3, 24-Jun-98  
2 (5)  
BYG21  
Vishay Telefunken  
200  
150  
100  
50  
T
amb  
=125°C  
100°C  
75°C  
50°C  
25°C  
I =0.5A, i =0.125A  
R
R
0
1.0  
0
0.2  
0.4  
I – Forward Current ( A )  
F
0.6  
0.8  
94 9350  
Figure 5. Max. Reverse Recovery Charge vs. Forward  
Current  
1000  
125K/W DC  
100  
t /T=0.5  
p
t /T=0.2  
p
t /T=0.1  
p
10  
1
t /T=0.05  
p
t /T=0.02  
p
Single Pulse  
t /T=0.01  
p
–5  
–4  
–3  
–2  
–1  
0
1
2
10  
10  
10  
10  
10  
10  
10  
10  
94 9339  
t – Pulse Length ( s )  
p
Figure 6. Thermal Response  
Document Number 86010  
Rev. 3, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
3 (5)  
BYG21  
Vishay Telefunken  
Dimensions in mm  
14275  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 86010  
Rev. 3, 24-Jun-98  
4 (5)  
BYG21  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 86010  
Rev. 3, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
5 (5)  
配单直通车
BYG21K产品参数
型号:BYG21K
生命周期:Transferred
Reach Compliance Code:unknown
风险等级:5.63
其他特性:FREEWHEELING DIODE, SNUBBER DIODE
应用:FAST SOFT RECOVERY
配置:SINGLE
二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:30 A
元件数量:1
相数:1
端子数量:2
最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
认证状态:Not Qualified
最大重复峰值反向电压:800 V
最大反向恢复时间:0.12 µs
表面贴装:YES
端子形式:C BEND
端子位置:DUAL
Base Number Matches:1
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