BZT55B6V8-GS08全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

BZT55B...

Vishay Semiconductors

Silicon Epitaxial Planar Z–Diodes

Features

D Very sharp reverse characteristic

D Low reverse current level

D Available with tighter tolerances

D Very high stability

D Low noise

D V –tolerance ± 2%

Z

96 12009

Applications

D Voltage stabilization

Order Instruction

Type

Ordering Code

Remarks

BZT55B2V4

BZT55B2V4–GS08

Tape and Reel

Absolute Maximum Ratings

Tj = 25°C

Parameter

Test Conditions

Type

Symbol

Value

500

Unit

mW

mA

°C

Power dissipation

Z–current

R

thJA

x300K/W

P

V

I

P /V

V

Z

Junction temperature

Storage temperature range

Junction ambient

T

175

j

T

stg

–65...+175

500

°C

on PC board

R

thJA

K/W

50 mm x 50 mm x 1.6 mm

Electrical Characteristics

Tj = 25°C

Parameter

Test Conditions

I =200mA

Symbol

Min.

Typ.

Max.

1.5

Unit

V

Forward voltage

V

F

Document Number 85637

Rev. 1, 22–May–02

www.vishay.com

1 (6)

BZT55B...

Vishay Semiconductors

Type

TZMB...

2V4

2V7

3V0

3V3

3V6

3V9

4V3

4V7

5V1

5V6

6V2

6V8

7V5

8V2

9V1

10

V

I

for V and r

r

at I

I and I at V

TK

VZ

Znom

ZT

zjT

zjk

ZK

R

2)

V

mA

5

V

Ω

mA

µA

V

%/K

2.4

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

10

11

2.35 to 2.45

2.64 to 2.76

2.94 to 3.06

3.24 to 3.36

3.52 to 3.68

3.82 to 3.98

4.22 to 4.38

4.60 to 4.80

5.00 to 5.20

5.48 to 5.72

6.08 to 6.32

6.66 to 6.94

7.35 to 7.65

8.04 to 8.36

8.92 to 9.28

< 85

< 90

< 80

< 60

< 40

< 10

< 8

< 600

< 550

< 450

< 200

< 150

< 50

1

< 50 < 100

< 10 < 50

1

–0.09 to –0.06

–0.08 to –0.05

–0.06 to –0.03

–0.05 to +0.02

–0.02 to +0.02

–0.05 to +0.05

0.03 to 0.06

0.03 to 0.07

0.03 to 0.08

0.03 to 0.09

0.03 to 0.1

5

< 4

< 2

< 1

< 40

< 20

1

5

1

5

1

5

1

5

1

5

< 0.5 < 10

1

5

< 0.1

< 2

< 5

1

5

1

5

2

5

3

5

< 7

5

< 7

< 50

6.2

6.8

7.5

8.2

9.1

10

11

12

13

15

16

18

20

22

24

27

30

33

36

39

43

47

51

56

5

< 10

< 50

5

9.80 to 10.20 < 15

10.78 to 11.22 < 20

11.76 to 12.24 < 20

12.74 to 13.26 < 26

14.70 to 15.30 < 30

15.70 to 16.30 < 40

17.64 to 18.36 < 50

19.60 to 20.40 < 55

21.55 to 22.45 < 55

< 70

11

5

< 70

0.03 to 0.11

0.04 to 0.12

0.04 to 0,12

0.04 to 0.12

12

13

15

16

18

20

22

24

27

30

33

36

39

43

47

51

56

62

68

75

5

< 90

13

5

< 110

< 170

< 220

< 500

< 600

15

5

16

5

18

5

20

5

22

5

24

5

23.5 to 24.5

26.4 to 27.6

29.4 to 30.6

32.4 to 33.6

35.3 to 36.7

38.2 to 39.8

42.1 to 43.9

46.1 to 47.9

< 80

< 90

27

5

30

5

33

5

36

5

39

2.5

43

0.5 < 0.1

47

< 110 < 700

51

50.0 to 52.0 < 125 < 700

0.5 < 0.1 < 10

56

54.9 to 57.1 < 135 < 1000 0.5 < 0.1 < 10

60.8 to 63.2 < 150 < 1000 0.5 < 0.1 < 10

66.6 to 69.4 < 200 < 1000 0.5 < 0.1 < 10

73.5 to 76.5 < 250 < 1500 0.5 < 0.1 < 10

62

68

75

www.vishay.com

2 (6)

Document Number 85637

Rev. 1, 22–May–02

BZT55B...

Vishay Semiconductors

Characteristics (Tj = 25_C, unless otherwise specified)

600

15

500

10

400

300

200

5

I =5mA

Z

0

100

0

–5

200

50

0

40

80

120

160

0

10

20

30

40

T

amb

– Ambient Temperature ( °C )

V – Z-Voltage ( V )

Z

95 9602

95 9600

Figure 1. Total Power Dissipation vs.

Ambient Temperature

Figure 4. Temperature Coefficient of Vz vs. Z–Voltage

1000

100

10

200

T =25°C

j

150

V =2V

R

T =25°C

j

100

I =5mA

Z

50

0

1

25

0

5

10

15

20

0

5

10

15

20

V

Z

– Z-Voltage ( V )

95 9598

V

Z

– Z-Voltage ( V )

95 9601

Figure 2. Typical Change of Working Voltage under

Figure 5. Diode Capacitance vs. Z–Voltage

Operating Conditions at T =25°C

amb

100

10

1.3

1.2

1.1

V

Ztn

=V /V (25°C)

Zt Z

–4

TK =10 10 /K

VZ

–4

8 10 /K

T =25°C

j

–4

6 10 /K

1

–4

4 10 /K

–4

2 10 /K

0

0.1

1.0

0.9

0.8

–4

–2 10 /K

–4

–4 10 /K

0.01

0.001

1.0

240

0

0.2

0.4

0.6

0.8

–60

0

60

120

180

V – Forward Voltage ( V )

F

T – Junction Temperature ( °C )

j

95 9605

95 9599

Figure 3. Typical Change of Working Voltage vs.

Junction Temperature

Figure 6. Forward Current vs. Forward Voltage

Document Number 85637

Rev. 1, 22–May–02

www.vishay.com

3 (6)

BZT55B...

Vishay Semiconductors

100

80

1000

100

10

I =1mA

Z

P

T

=500mW

tot

=25°C

amb

60

5mA

40

20

0

10mA

T =25°C

j

1

20

25

0

4

8

12

16

0

5

10

15

20

V

Z

– Z-Voltage ( V )

V – Z-Voltage ( V )

Z

95 9604

95 9606

Figure 7. Z–Current vs. Z–Voltage

Figure 9. Differential Z–Resistance vs. Z–Voltage

50

40

30

P

T

=500mW

tot

=25°C

amb

20

10

0

35

15

20

25

30

V

Z

– Z-Voltage ( V )

95 9607

Figure 8. Z–Current vs. Z–Voltage

1000

100

10

t /T=0.5

p

t /T=0.2

p

Single Pulse

R

DT=T

=300K/W

–T

jmax amb

thJA

t /T=0.01

p

t /T=0.1

p

t /T=0.02

p

2

1/2

t /T=0.05

p

i

=(–V +(V +4r ꢀDT/Z

)

)/(2r )

zj

ZM

Z

zj

thp

1

10

–1

0

1

2

10

t – Pulse Length ( ms )

10

95 9603

p

Figure 10. Thermal Response

www.vishay.com

4 (6)

Document Number 85637

Rev. 1, 22–May–02

BZT55B...

Vishay Semiconductors

Dimensions in mm

96 12071

Document Number 85637

Rev. 1, 22–May–02

www.vishay.com

5 (6)

BZT55B...

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone

depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their

use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs

listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances

and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

www.vishay.com

6 (6)

Document Number 85637

Rev. 1, 22–May–02

型号:	BZT55B6V8-GS08
是否Rohs认证：	不符合
生命周期：	Transferred
IHS 制造商：	TELEFUNKEN MICROELECTRONICS GMBH
Reach Compliance Code：	unknown
风险等级：	5.62
Is Samacsys：	N
配置：	SINGLE
二极管类型：	ZENER DIODE
最大动态阻抗：	8 Ω
JESD-609代码：	e0
元件数量：	1
最高工作温度：	175 °C
最大功率耗散：	0.5 W
标称参考电压：	6.8 V
子类别：	Voltage Reference Diodes
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
最大电压容差：	2%
工作测试电流：	5 mA
Base Number Matches：	1

电子百科

产品导航

产品型号BZT55B6V8-GS08的Datasheet PDF文件预览

BZT55B6V8-GS08相关产品

BZT55B6V8-GS08相关文章

IC37:专业IC行业平台