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产品型号ZVN4306GTA的Datasheet PDF文件预览

ZVN4306G  
Green  
60V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET  
Features and Benefits  
Mechanical Data  
V(BR)DSS > 60V  
Case: SOT223  
RDS(ON) 0.33@ VGS = 10V  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish  
Maximum Continuous Drain Current ID = 2.1A  
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Weight: 0.112 grams (Approximate)  
Applications  
DC-DC Converters  
Solenoids / Relay Driver for Automotive  
SOT223  
D
G
S
Top View  
Equivalent Circuit  
Pin Out - Top  
Ordering Information (Note 4)  
Part Number  
ZVN4306GTA  
Marking  
ZVN4306  
Reel size (inches)  
7
Tape width (mm)  
8
Quantity per reel  
1,000  
Notes:  
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
SOT223  
ZVN4306 = Product Type Marking Code  
YWW = Date Code Marking  
ZVN  
4306  
Y or Y = Last Digit of Year (ex: 5= 2015)  
WW or WW = Week Code (01~53)  
1 of 5  
www.diodes.com  
February 2015  
© Diodes Incorporated  
ZVN4306G  
Document number: DS33369 Rev. 4 - 2  
ZVN4306G  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VGSS  
ID  
Value  
60  
Unit  
V
Gate-Source Voltage  
20  
V
Continuous Drain Current  
Pulsed Drain Current (Note 6)  
2.1  
15  
A
A
IDM  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Power Dissipation (Note 5)  
Operating and Storage Temperature Range  
Symbol  
PD  
TSTG  
Value  
3
Unit  
W
TA =+25°C  
-55 to +150  
°C  
TJ  
,
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 7)  
Drain-Source Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
60  
-
-
-
-
V
BVDSS  
IDSS  
VGS = 0V, ID = 1mA  
10  
100  
µA VDS = 60V, VGS = 0V  
Zero Gate Voltage Drain Current TJ = +25°C  
µA  
nA  
A
VDS = 48V, VGS = 0V, TA = +125°C  
VGS 20V, VDS = 0V  
Gate-Source Leakage  
-
-
-
20  
-
IGSS  
=
On-State Drain Current  
12  
ID(ON)  
VGS = 10V, VDS = 10V  
ON CHARACTERISTICS (Note 7)  
Gate Threshold Voltage  
1.3  
-
-
3.0  
V
S
VGS(TH)  
RDS(ON)  
gfs  
VDS = VGS, ID = 1mA  
VGS = 10V, ID = 3.0A  
VGS = 5V, ID = 1.5A  
VDS = 25V, ID = 3.0A  
0.22  
0.32  
0.33  
0.45  
Static Drain-Source On-Resistance  
Forward Transconductance  
DYNAMIC CHARACTERISTICS (Note 8)  
Input Capacitance  
0.7  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
350  
140  
30  
8
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Ciss  
Coss  
Crss  
tD(ON)  
tR  
VDS = 25V, VGS = 0V,  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
25  
30  
16  
Turn-On Rise Time  
VDD = 25V, ID = 3A, VGEN = 10V,  
Turn-Off Delay Time  
RGS = 50  
tD(OFF)  
tF  
Turn-Off Fall Time  
Notes:  
5. For a device mounted on 50mm x 50mm x 1.6mm FR-4 PCB with high coverage of single sided 2oz copper, in still air condition.  
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.  
7. Short duration pulse test used to minimize self-heating effect.  
8. Guaranteed by design. Not subject to production testing.  
2 of 5  
www.diodes.com  
February 2015  
© Diodes Incorporated  
ZVN4306G  
Document number: DS33369 Rev. 4 - 2  
ZVN4306G  
Typical Characteristics  
VDS, Drain Source Voltage (V)  
ID, Drain Current (A)  
Figure 1. Saturation Characteristics  
Figure 2. On-resistance vs. drain current  
TJ, Junction Temperature (°C)  
ID(ON), Drain Current (A)  
Figure 3. Normalised RDS(ON) and VGS(TH) vs. Temperature  
Figure 4. Transconductance vs. Drain Current  
VDS, Drain Source Voltage (V)  
Q, Charge (nC)  
Figure 5. Capacitance vs. Drain-source Voltage  
Figure 6. Gate Charge vs. Gate-source Voltage  
3 of 5  
www.diodes.com  
February 2015  
© Diodes Incorporated  
ZVN4306G  
Document number: DS33369 Rev. 4 - 2  
ZVN4306G  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.  
SOT223  
Dim Min Max Typ  
A
1.55 1.65 1.60  
A1 0.010 0.15 0.05  
b
b1  
C
0.60 0.80 0.70  
2.90 3.10 3.00  
0.20 0.30 0.25  
6.45 6.55 6.50  
3.45 3.55 3.50  
6.90 7.10 7.00  
D
E
E1  
e
-
-
-
-
4.60  
2.30  
e1  
L
0.85 1.05 0.95  
0.84 0.94 0.89  
All Dimensions in mm  
Q
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
Dimensions Value (in mm)  
C
C1  
X
X1  
Y
2.30  
6.40  
1.20  
3.30  
1.60  
1.60  
8.00  
Y1  
Y2  
4 of 5  
www.diodes.com  
February 2015  
© Diodes Incorporated  
ZVN4306G  
Document number: DS33369 Rev. 4 - 2  
ZVN4306G  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for  
use provided in the labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably  
expected to cause the failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2015, Diodes Incorporated  
www.diodes.com  
5 of 5  
www.diodes.com  
February 2015  
© Diodes Incorporated  
ZVN4306G  
Document number: DS33369 Rev. 4 - 2  
配单直通车
ZVN4306GTA产品参数
型号:ZVN4306GTA
是否无铅: 含铅
是否Rohs认证: 符合
生命周期:Active
零件包装代码:SOT-223
包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4
Reach Compliance Code:not_compliant
ECCN代码:EAR99
HTS代码:8541.29.00.95
Factory Lead Time:17 weeks
风险等级:1.39
外壳连接:DRAIN
配置:SINGLE
最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):2.1 A
最大漏极电流 (ID):2.1 A
最大漏源导通电阻:0.45 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4
JESD-609代码:e3
湿度敏感等级:1
元件数量:1
端子数量:4
工作模式:ENHANCEMENT MODE
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3 W
最大脉冲漏极电流 (IDM):15 A
认证状态:Not Qualified
子类别:FET General Purpose Powers
表面贴装:YES
端子面层:Matte Tin (Sn)
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING
晶体管元件材料:SILICON
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