零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
BB620 | Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) SiliconVariableCapacitanceDiode ●ForHyperbandTV/VTRtuners,BdI | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | |
PNPSILICONEPIBASETRANSISTORS | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
NPNSILICONPLANARHIGHVOLTAGETRANSISTOR FEATURES *Highbreakdownandlowsaturationvoltages APPLICATIONS *SuitableforvideooutputstagesinTVsets *Switchingpowersupplies | Zetex Zetex Semiconductors | Zetex | ||
NPNhigh-voltagetransistors DESCRIPTION NPNhigh-voltagetransistorinaSOT89plasticpackage. PNPcomplements:BF621andBF623. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Videooutputstages. | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TheSmall-signalNPNSiliconHighVoltageMedium-PowerTransistor [PLANETA] DESCRIPTION TheBF620isanNPNsiliconepitaxialtransistordesignedforapplicationasavideooutputtodrivecolorCRT,telephony,professionalcommunicationequipmentandotherhighvoltageapplications. Ithasdynamicrangeandgoodcurrentcharacteristic. Thishighvoltagetra | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
NPNhigh-voltagetransistors DESCRIPTION NPNhigh-voltagetransistorinaSOT89plasticpackage. PNPcomplements:BF621andBF623. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Videooutputstages. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
SiliconNPNepitaxialplanertype Features ●Lowcurrent(max.50mA) ●Highvoltage(max.300V). | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
TRANSISTOR(NPN) FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). •Videooutputstages. | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
SOT-89-3LPlastic-EncapsulateTransistors FEATURES Lowcurrent(max.50mA) Highvoltage(max.300V). Videooutputstages. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
Plastic-EncapsulateTransistors FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). •Videooutputstages. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | HOTTECH | ||
SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●Lowcurrent(max.50mA) ●Highvoltage(max.300V). ●Videooutputstages. | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Powerdissipation PCM:500mW(Tamb=25℃) Collectorcurrent ICM:50mA Collector-basevoltage V(BR)CBO:300V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
NPNhigh-voltagetransistors FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
NPNSiliconGermaniumRFTransistor LowNoiseSiGe:CBipolarRFTransistor •HighlylinearlownoiseRFtransistor •Providesoutstandingperformance forawiderangeofwirelessapplications •BasedonInfineonsreliablehighvolume SiliconGermaniumtechnology •IdealforCDMAandWLANapplications •Collectordesign | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNTransistor | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
NPNSiliconGermaniumRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
LowNoiseSiGe:CBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconGermaniumRFTransistor NPNSiliconGermaniumRFTransistor* •HighgainlownoiseRFtransistor •Smallpackage1.4x0.8x0.59mm •OutstandingnoisefigureF=0.7dBat1.8GHz OutstandingnoisefigureF=1.3dBat6GHz •Maximumstablegain Gms=21dBat1.8GHz Gma=10dBat6GHz •Goldmetal | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconGermaniumRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconGermaniumRFTransistor NPNSiliconGermaniumRFTransistor* •HighgainlownoiseRFtransistor •Smallpackage1.4x0.8x0.59mm •OutstandingnoisefigureF=0.7dBat1.8GHz OutstandingnoisefigureF=1.3dBat6GHz •Maximumstablegain Gms=21dBat1.8GHz Gma=10dBat6GHz •Goldmetal | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号:
BB620
- 制造商:
INFINEON
- 制造商全称:
Infineon Technologies AG
- 功能描述:
Silicon Variable Capacitance Diode(For Hyperband TV/VTR tuners, Bd I)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP/恩智浦 |
24+ |
SOD-123 |
500 |
原装正品,假一罚十! |
询价 | ||
BB |
22+ |
SOP-8 |
2750 |
福安瓯为您提供真芯库存,真诚服务 |
询价 | ||
PHILIPS |
9409 |
798 |
原装正品长期供货,如假包赔包换 徐小姐13714450367 |
询价 | |||
SIEMENS |
24+ |
SOD-123 |
12000 |
询价 | |||
SIEMENS |
94+ |
SOD123 |
6000 |
绝对原装自己现货 |
询价 | ||
NXP |
2023+ |
SMD |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
PHILIPS |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
INFINEON |
1922+ |
SOD-123 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
SIEMENS |
23+ |
SOD123 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SIEMENS |
96+ |
SOD123 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
相关规格书
更多- BB639
- BB639CE7904
- BB639E7904
- BB639E7904HTSA1
- BB640E6327
- BB640E6327HTSA1
- BB644E7904HTSA1
- BB659C
- BB659C-02VH7902
- BB664
- BB664-02VH7902
- BB669
- BB689
- BB721
- BB804
- BB811
- BB814E6327GR1
- BB814E6327GR1HTSA1
- BB830T
- BB833
- BB837E6327
- BB837E6327HTSA1
- BB844E6327
- BB85702VH7902XTSA1
- BB914E6327
- BB-BBLK-000
- BB-BONE-BATT-01
- BB-BONE-BBPR-01
- BB-BONE-DVID-01
- BB-BONE-MOTOR-01
- BB-BONE-NINJA-01
- BBC01
- BBC-1823
- BBC-1825
- BBD-113-G-A
- BBEXPDTR43
- BBI-3A-20'
- BBI-5A-20'
- BBL-101-G-E
- BBL-106-T-E
- BBL-132-G-F
- BBPDC
- BBRG59C-B25
- BBS-1/2
- BBS-10
相关库存
更多- BB639CE7904
- BB639CE7904HTSA1
- BB639E7904
- BB640
- BB640E6327
- BB644
- BB659
- BB659C-02V
- BB659H7902
- BB664-02V
- BB66402VH7902XTSA1
- BB669E7904HTSA1
- BB7
- BB729
- BB804W
- BB814
- BB814E6327GR1
- BB830
- BB831
- BB833E6327
- BB837E6327
- BB844E6327
- BB857
- BB914
- BBA00010667
- BB-BONE-000
- BB-BONE-BBBD-01
- BB-BONE-BRKT-01
- BB-BONE-DVID-02
- BB-BONE-MOTOR-02
- BB-BONE-WTHR-01
- BBC-1821
- BBC-1824
- BBD-110-T-A
- BBEXPDTC70
- BBEXPDTR70
- BBI-4A-20'
- BBI-7A-50'
- BBL-102-T-E
- BBL-132-G-E
- BBLK9M
- BBR
- BBS-1
- BBS-1/4
- BBS-106-G-A