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    产品型号BTS430K2的Datasheet PDF文件预览

    ®
    PROFET BTS 430 K2  
    Smart Highside Power Switch  
    Features  
    Product Summary  
    •
    •
    •
    •
    •
    •
    •
    •
    •
    •
    •
    Clamp of negative voltage at output  
    V
    V
    V
    V
    OUT Avalanche Clamp  
    bb (operation)  
    bb (reverse)  
    -
    bb  
    50  
    4.5 ... 32  
    -32  
    V
    V
    V
    Short-circuit protection  
    Current limitation  
    Thermal shutdown  
    Diagnostic feedback  
    Open load detection in ON-state  
    CMOS compatible input  
    Electrostatic Discharge (ESD) protection  
    Loss of ground and loss of V protection  
    Reverse battery protection  
    R
    I
    38  
    36  
    ON  
    mΩ  
    A
    L(lim)  
    I
    11  
    A
    L(ISO)  
    1)  
    bb  
    Undervoltage and overvoltage shutdown with auto-restart and hysteresis  
    Application  
    5
    •
    µC compatible power switch with diagnostic feedback  
    for 12 V and 24 V DC grounded loads  
    All types of resistive, inductive and capacitve loads  
    Replaces electromechanical relays and discrete circuits  
    •
    •
    General Description  
    N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic fault  
    feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection  
    functions.  
    + V  
    R
    bb  
    bb  
    3
    5
    Vo lta g e  
    so urc e  
    V
    Ga te  
    Ove rvo lta g e  
    p ro te c tio n  
    Curre nt  
    lim it  
    p ro te c tio n  
    Logic  
    OUT  
    Lim it fo r  
    unc la m p e d  
    ind . lo a d s  
    Cha rg e p um p  
    Le ve l shifte r  
    Vo lta g e  
    se nso r  
    Te m p e ra ture  
    se nso r  
    Re c tifie r  
    IN  
    2
    Op e n c irc uit  
    d e te c tio n  
    Load  
    Lo g ic  
    ESD  
    4
    ST  
    Sho rt c irc uit  
    d e te c tio n  
    PROFET  
    GND  
    1
    Load GND  
    Signal GND  
    1)  
    Additional external diode required for charged inductive loads  
    Semiconductor Group  
    1
    04.96  
    BTS 430 K2  
    Pin  
    1
    Symbol  
    GND  
    IN  
    Function  
    -
    Logic ground  
    2
    I
    Input, activates the power switch in case of logical high signal  
    3
    V
    +
    Positive power supply voltage,  
    the tab is shorted to this pin  
    bb  
    4
    5
    ST  
    S
    Diagnostic feedback, low on failure  
    Output to the load  
    OUT  
    O
    (Load, L)  
    Maximum Ratings at Tj = 25 °C unless otherwise specified  
    Parameter  
    Symbol  
    Values  
    Unit  
    Supply voltage (overvoltage protection see page 3)  
    Vbb  
    54  
    V
    Load current (Short-circuit current, see page 4)  
    Operating temperature range  
    Storage temperature range  
    IL  
    self-limited  
    -40 ...+150  
    -55 ...+150  
    A
    Tj  
    °C  
    Tstg  
    Ptot  
    EAS  
    VESD  
    VIN  
    IIN  
    Power dissipation (DC)  
    125  
    1.7  
    W
    J
    Inductive load switch-off energy dissipation  
    Electrostatic discharge capability (ESD)  
    Input voltage (DC)  
    Current through input pin (DC)  
    Current through status pin (DC)  
    see internal circuit diagrams page 6...  
    2.0  
    kV  
    V
    mA  
    -10 ... +16  
    ±5.0  
    ±5.0  
    IST  
    Thermal resistance  
    chip - case: RthJC  
    chip - ambient: RthJA  
    ≤ 1 K/W  
    ≤ 75  
    Semiconductor Group  
    2
    BTS 430 K2  
    Electrical Characteristics  
    Parameter and Conditions  
    Symbol  
    Values  
    Unit  
    at Tj = 25 °C, V = 12 V unless otherwise specified  
    bb  
    min  
    --  
    typ  
    max  
    Load Switching Capabilities and Characteristics  
    On-state resistance (pin 3 to 5)  
    IL = 2 A  
    T=25 °C: RON  
    j
    30  
    55  
    11  
    38  
    70  
    --  
    mΩ  
    T=150 °C:  
    j
    Nominal load current (pin 3 to 5)  
    IL(ISO)  
    9
    A
    ISO Proposal: VON = 0.5 V, T = 85 °C  
    C
    Output current (pin 5) while GND disconnected or  
    GND pulled up, see diagram page 7  
    IL(GNDhigh)  
    --  
    --  
    1
    mA  
    Turn-on time  
    Turn-off time  
    to 90% VOUT: ton  
    to 10% VOUT: toff  
    50  
    10  
    160  
    --  
    260  
    60  
    µs  
    RL = 12 Ω  
    Slew rate on  
    10 to 30% VOUT, RL = 12 Ω  
    dV /dton  
    -dV/dtoff  
    0.4  
    1
    --  
    --  
    2 V/µs  
    4 V/µs  
    Slew rate off  
    70 to 40% VOUT, RL = 12 Ω  
    Operating Parameters  
    Operating voltage  
    T =-40...+150°C: Vbb(on)  
    4.5  
    2.4  
    --  
    --  
    --  
    32  
    V
    V
    V
    V
    j
    Undervoltage shutdown  
    Undervoltage restart  
    T =-40...+150°C: Vbb(under)  
    j
    4.5  
    4.5  
    7.5  
    T =-40...+150°C: Vbb(u rst)  
    j
    --  
    Undervoltage restart of charge pump  
    see diagram page 12  
    Vbb(ucp)  
    --  
    6.5  
    Undervoltage hysteresis  
    ∆Vbb(under) = Vbb(u rst) - Vbb(under)  
    ∆Vbb(under)  
    --  
    0.2  
    --  
    V
    Overvoltage shutdown  
    Overvoltage restart  
    Overvoltage hysteresis  
    Overvoltage protection2)  
    Ibb=4 mA  
    T =-40...+150°C: Vbb(over)  
    32  
    32  
    --  
    --  
    --  
    46  
    --  
    V
    V
    V
    V
    j
    T =-40...+150°C: Vbb(o rst)  
    j
    T =-40...+150°C: ∆Vbb(over)  
    j
    0.2  
    57  
    --  
    T =-40...+150°C: Vbb(AZ)  
    j
    50  
    --  
    Standby current (pin 3)  
    VIN=0  
    Ibb(off)  
    Tj=-40...+25°C:  
    Tj=150°C:  
    µA  
    --  
    --  
    12  
    18  
    25  
    60  
    Operating current (Pin 1)3), VIN=5  
    IGND  
    --  
    1.1  
    -- mA  
    2)  
    see also V  
    in table protection functions and circuit diagram page 7. Meassured without load.  
    ON(CL)  
    3)  
    Add I , if I > 0  
    ST  
    ST  
    Semiconductor Group  
    3
    BTS 430 K2  
    Parameter and Conditions  
    Symbol  
    Values  
    Unit  
    at Tj = 25 °C, V = 12 V unless otherwise specified  
    bb  
    min  
    typ  
    max  
    Protection Functions  
    Overload current limit (pin 3 to 5)  
    Tj=-40...+150°C  
    IL(lim)  
    19  
    80  
    36  
    --  
    57  
    A
    Short circuit shutdown delay after input pos. slope  
    VON > VON(SC)  
    ,
    Tj =-40..+150°C: td(SC)  
    400  
    µs  
    min value valid only, if input "low" time exceeds 30 µs  
    Output clamp (inductive load switch off)  
    at VOUT = Vbb - VON(CL)  
    VON(CL)  
    --  
    50  
    --  
    V
    V
    Short circuit shutdown detection voltage  
    (pin 3 to 5)  
    VON(SC)  
    Tjt  
    --  
    150  
    --  
    8.3  
    --  
    --  
    --  
    Thermal overload trip temperature  
    °C  
    K
    Thermal hysteresis  
    Inductive load switch-off energy dissipation4),  
    ∆Tjt  
    10  
    --  
    --  
    EAS  
    --  
    1.7  
    1.3  
    1.0  
    J
    Tj Start = 150 °C  
    Vbb = 12 V: ELoad12  
    Vbb = 24 V: ELoad24  
    Reverse battery (pin 3 to 1) 5)  
    Integrated resistor in Vbb line  
    -Vbb  
    Rbb  
    --  
    --  
    --  
    32  
    --  
    V
    120  
    Ω
    Diagnostic Characteristics  
    IL (OL)  
    10  
    10  
    --  
    --  
    500 mA  
    600  
    Open load detection current  
    (on-condition, )  
    Tj=25..150°C:  
    Tj=-40 °C:  
    Leakage output current  
    (off-condition)  
    IL(off)  
    --  
    6
    --  
    µA  
    4)  
    While demagnetizing load inductance, dissipated energy in PROFET is E = VON(CL) * iL(t) dt, approx.  
    AS  
    ∫
    VON(CL)  
    VON(CL) - Vbb  
    2
    L
    1
    E
    AS  
    = / * L * I * (  
    ), see diagramm page 8  
    2
    5)  
    Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.  
    Reverse current I of ≈ 0.3 A at V = -32 V through the logic heats up the device. Time allowed under  
    GND  
    bb  
    these condition is dependent on the size of the heatsink. Reverse I  
    can be reduced by an additional  
    GND  
    external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and  
    circuit page 7).  
    Semiconductor Group  
    4
    BTS 430 K2  
    Parameter and Conditions  
    Symbol  
    Values  
    Unit  
    at Tj = 25 °C, V = 12 V unless otherwise specified  
    bb  
    min  
    typ  
    max  
    Input and Status Feedback6)  
    Input resistance  
    RI  
    VIN(T+)  
    --  
    1.5  
    1.0  
    10  
    --  
    --  
    2.4  
    --  
    kΩ  
    V
    see circuit page 6  
    Input turn-on threshold voltage  
    Tj =-40..+150°C:  
    Input turn-off threshold voltage  
    VIN(T-)  
    --  
    V
    Tj =-40..+150°C:  
    Input threshold hysteresis  
    Off state input current (pin 2)  
    On state input current (pin 2)  
    Status valid after input slope  
    (short circuit)  
    ∆ VIN(T)  
    --  
    1
    10  
    0.5  
    --  
    25  
    --  
    30  
    50  
    V
    VIN = 0.4 V: IIN(off)  
    VIN = 3.5 V: IIN(on)  
    T =-40 ... +150°C: td(ST SC)  
    µA  
    80  
    200  
    400  
    µs  
    µs  
    j
    Status valid after input slope  
    (open load)  
    T =-40 ... +150°C: td(ST)  
    350  
    -- 1600  
    j
    Status output (open drain)  
    Zener limit voltage T =-40...+150°C, IST = +1.6 mA: VST(high)  
    5.4  
    --  
    6.1  
    --  
    --  
    6.9  
    0.4  
    V
    V
    j
    ST low voltage T =-40...+150°C, IST = +1.6 mA: VST(low)  
    j
    Status voltage while Vbb <2.4 V T =25 ... +150°C: VST  
    --  
    1.0  
    1.2  
    j
    IST = 500 µA  
    T =40°C:  
    j
    6)  
    If a ground resistor R  
    is used, add the voltage drop across this resistor. Internal Z-diode typ. 6.1 V, see  
    GND  
    maximum ratings page 2, circuit page 7  
    Semiconductor Group  
    5
    BTS 430 K2  
    Truth Table  
    Input-  
    level  
    Output Status  
    level  
    432  
    D2  
    432  
    E2/F2  
    432  
    I2  
    430  
    K2  
    Normal  
    operation  
    Open load  
    L
    H
    L
    H
    L
    H
    L
    H
    L
    H
    L
    H
    L
    H
    L
    H
    H
    H
    L
    H
    L
    H
    H
    H
    L
    H
    L
    H
    H
    L
    H
    H
    L
    L
    H
    L
    H
    H
    H
    H
    7
    )
    H
    L
    8)  
    Short circuit  
    to GND  
    Short circuit  
    L
    L
    H
    H
    L
    L
    L
    L
    L
    L
    L
    H
    H
    H
    9)  
    9)  
    9)  
    to V  
    bb  
    H (L )  
    H (L )  
    H (L )  
    Overtem-  
    perature  
    Under-  
    voltage  
    Overvoltage  
    L
    L
    L
    L
    H
    H
    H
    H
    L
    L
    L
    10)  
    10)  
    11)  
    L
    L
    L
    L
    10)  
    10)  
    11)  
    L
    L
    L
    L
    L
    L
    L
    L
    L = "Low" Level  
    H = "High" Level  
    Terms  
    Status output  
    +5V  
    ST  
    I
    bb  
    3
    I
    IN  
    V
    bb  
    IN  
    2
    I
    V
    L
    ON  
    OUT  
    PROFET  
    I
    5
    ST  
    ESD-  
    ZD  
    ST  
    4
    V
    GND  
    GND  
    V
    ST  
    IN  
    V
    1
    I
    bb  
    V
    GND  
    OUT  
    ESD zener diodes are not designed for continuous  
    current  
    R
    GND  
    Short Circuit detection  
    Fault Condition: VON > 8.3 V typ.; IN high  
    Input circuit (ESD protection)  
    + V  
    bb  
    R
    I
    IN  
    V
    ON  
    ESD-ZDI  
    I
    I
    OUT  
    GND  
    Short circuit  
    detection  
    Logic  
    unit  
    ESD zener diodes are not designed for continuous  
    current  
    7)  
    8)  
    Power Transistor off, high impedance  
    The short circuit signal from last ON state is latched until next turn-on, see timing diagram page 10  
    9)  
    10)  
    11)  
    Low resistance short V to output may be detected by no-load-detection  
    bb  
    No current sink capability during undervoltage shutdown  
    Current sink capability see page 5  
    Semiconductor Group  
    6
    BTS 430 K2  
    Inductive and overvoltage output clamp  
    GND disconnect  
    + V  
    bb  
    V
    Z
    3
    V
    ON  
    V
    bb  
    IN  
    2
    OUT  
    OUT  
    PROFET  
    5
    GND  
    ST  
    4
    GND  
    1
    V
    ON  
    clamped to 50 V typ.  
    V
    V
    V
    V
    bb  
    I
    S
    GND  
    Overvolt. and reverse batt. protection  
    + V  
    Any kind of load. In case of Input=high VOUT ≈ VI - VIN(T+)  
    bb  
    Due to VGND >0, no VS = low signal available.  
    Rbb  
    V
    Z
    GND disconnect with GND pull up  
    RIN  
    IN  
    Logic  
    3
    V
    OUT  
    ST  
    V
    RST  
    bb  
    IN  
    2
    GND  
    PROFET  
    OUT  
    PROFET  
    5
    RGND  
    ST  
    4
    Signal GND  
    GND  
    1
    R
    120 Ω typ., V 57 V typ., , add R  
    , R , R for  
    GND IN ST  
    bb  
    Z
    extended protection  
    V
    V
    V
    V
    GND  
    bb  
    I
    S
    Open-load detection  
    Fault Condition: VON < RON * IL(OL); IN high  
    Any kind of load. If VGND > VI - VIN(T+) device stays off  
    Due to VGND >0, no VS = low signal available.  
    + V  
    bb  
    V
    disconnect with charged inductive  
    bb  
    load  
    VON  
    ON  
    3
    V
    high  
    bb  
    IN  
    OUT  
    2
    Open load  
    detection  
    Logic  
    unit  
    OUT  
    PROFET  
    5
    ST  
    4
    GND  
    1
    V
    bb  
    Semiconductor Group  
    7
    BTS 430 K2  
    Inductive Load switch-off energy  
    dissipation  
    3
    E
    bb  
    V
    high  
    bb  
    IN  
    2
    E
    AS  
    OUT  
    PROFET  
    E
    5
    Load  
    V
    ST  
    bb  
    IN  
    4
    GND  
    1
    O U T  
    PROFET  
    =
    ST  
    E
    L
    V
    G N D  
    bb  
    E
    R
    Energy dissipated in PROFET EAS = Ebb + EL - ER.  
    2
    1
    E
    Load  
    < E , E = / * L * I  
    L L  
    2
    L
    Semiconductor Group  
    8
    BTS 430 K2  
    Options Overview  
    all versions: High-side switch, Input protection, ESD protection, load dump and  
    reverse battery protection  
    Type  
    BTS 432D2 432E2 432F2 432I 430K2  
    2
    Logic version  
    D
    E
    F
    I
    K
    Overtemperature protection  
    T >150 °C, latch function12 13  
    X
    X
    X
    )
    )
    j
    X
    X
    X
    X
    T >150 °C, with auto-restart on cooling  
    j
    Short-circuit to GND protection  
    12)  
    switches off when V >8.3 V typ.  
    X
    X
    X
    X
    X
    X
    ON  
    (when first turned on after approx. 200 µs)  
    Open load detection  
    in OFF-state with sensing current 30 µA typ.  
    in ON-state with sensing voltage drop across  
    power transistor  
    X
    X
    Undervoltage shutdown with auto restart  
    Overvoltage shutdown with auto restart  
    X
    X
    X
    X
    X
    X
    X
    X
    X
    X
    Status feedback for  
    overtemperature  
    X
    X
    X
    X
    X
    X
    X
    X
    X
    X
    15)  
    short circuit to GND  
    X
    14)  
    X
    14)  
    X
    14)  
    X
    14)  
    short to V  
    bb  
    -
    -
    -
    -
    open load  
    X
    X
    X
    X
    -
    X
    -
    X
    X
    X
    undervoltage  
    overvoltage  
    Status output type  
    CMOS  
    -
    -
    X
    X
    X
    X
    X
    X
    X
    X
    Open drain  
    Output negative voltage transient limit  
    (fast inductive load switch off)  
    to V - V  
    bb ON(CL)  
    X
    X
    X
    X
    X
    X
    Load current limit  
    high level (can handle loads with high inrush currents)  
    medium level  
    X
    low level (better protection of application)  
    12)  
    Latch except when V -V  
    < V  
    after shutdown. In most cases V  
    = 0 V after shutdown (V  
    ≠
    bb  
    OUT  
    ON(SC)  
    OUT  
    OUT  
    0 V only if forced externally). So the device remains latched unless V < V  
    (see page 4). No latch  
    bb  
    ON(SC)  
    between turn on and t  
    With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage  
    Low resistance short V to output may be detected by no-load-detection  
    with status latch until next turn on  
    .
    d(SC)  
    13)  
    14)  
    15)  
    bb  
    Semiconductor Group  
    9
    BTS 430 K2  
    Timing diagrams  
    Figure 2b: Switching an inductive load  
    Figure 1a: V turn on, :  
    bb  
    IN  
    IN  
    t
    d(bb IN)  
    V
    t
    bb  
    d(ST)  
    ST  
    *)  
    V
    OUT  
    V
    OUT  
    A
    ST open drain  
    I
    L
    I
    L(OL)  
    t
    A
    t
    in case of too early V =high the device may not turn on (curve A)  
    IN  
    t
    d(bb IN) approx. 150 µs  
    *) if the time constant of load is too large, open-load-status may  
    occur  
    Figure 2a: Switching a lamp,  
    Figure 3a: Turn on into short circuit,  
    IN  
    IN  
    ST  
    ST  
    **)  
    *)  
    V
    OUT  
    V
    OUT  
    t
    d(SC)  
    I
    L
    I
    L
    t
    t
    typ. t  
    approx. 200µs, *) depends on history,  
    d(SC)  
    **) error signal latched until next turn on  
    Semiconductor Group  
    10  
    BTS 430 K2  
    Figure 5a: Open load: detection in ON-state, turn  
    on/off to open load  
    Figure 3b: Short circuit while on:  
    IN  
    IN  
    t
    d(ST)  
    ST  
    V
    ST  
    *)  
    OUT  
    V
    OUT  
    I
    L
    I
    open  
    L
    t
    t
    *) error signal latched until next turn on  
    Figure 5b: Open load: detection in ON-state, open  
    load occurs in on-state  
    Figure 4a: Overtemperature:  
    Reset if T <T  
    j
    jt  
    IN  
    IN  
    t
    t
    d(OL ST2)  
    d(ST OL1)  
    ST  
    V
    ST  
    OUT  
    V
    OUT  
    normal  
    normal  
    I
    open  
    L
    T
    J
    t
    t
    td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ  
    Semiconductor Group  
    11  
    BTS 430 K2  
    Figure 6a: Undervoltage:  
    Figure 7a: Overvoltage:  
    IN  
    IN  
    V
    V
    V
    bb(over)  
    bb(o rst)  
    V
    V
    ON(CL)  
    bb  
    bb  
    V
    V
    bb(under)  
    bb(u rst)  
    V
    V
    OUT  
    OUT  
    ST  
    ST  
    t
    t
    Figure 6b: Undervoltage restart of charge pump  
    [V]  
    V
    ON  
    V
    ON(CL )  
    off  
    V
    bb(over)  
    off  
    V
    V
    bb(u rst)  
    bb(o rst)  
    V
    bb(u cp)  
    V
    bb(under)  
    on  
    V
    bb  
    [V]  
    charge pump starts at Vbb(ucp) 6.5 V typ.  
    Semiconductor Group  
    12  
    BTS 430 K2  
    Package and Ordering Code  
    All dimensions in mm  
    Standard TO-220 AB/5  
    Ordering code  
    TO-220 AB/5, OPTION E3043 Ordering code  
    BTS430K2 E3043  
    Q67060-S6200-A3  
    Q67060-S6200-A2  
    BTS430K2  
    SMD TO-220 AB/5, OPTION E3122  
    Ordering code  
    BTS430K2 E3122A T&R:  
    Q67060-S6200-A4  
    Changed since 04/96  
    Case E3122A drawing changed  
    Semiconductor Group  
    13  
    配单直通车
    BTS430K2产品参数
    型号:BTS430K2
    生命周期：Obsolete
    IHS 制造商：INFINEON TECHNOLOGIES AG
    零件包装代码：TO-220AB
    包装说明：ZIP, ZIP5,.15,.2,67TB
    针数：3
    Reach Compliance Code：unknown
    ECCN代码：EAR99
    HTS代码：8542.39.00.01
    风险等级：5.32
    内置保护：TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
    驱动器位数：1
    接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVER
    JESD-30 代码：R-PZFM-T5
    功能数量：1
    端子数量：5
    输出电流流向：SOURCE
    标称输出峰值电流：11 A
    封装主体材料：PLASTIC/EPOXY
    封装代码：ZIP
    封装等效代码：ZIP5,.15,.2,67TB
    封装形状：RECTANGULAR
    封装形式：FLANGE MOUNT
    电源：4.5/32 V
    认证状态：Not Qualified
    子类别：Peripheral Drivers
    最大供电电压：32 V
    最小供电电压：4.5 V
    标称供电电压：12 V
    表面贴装：NO
    端子形式：THROUGH-HOLE
    端子节距：1.7 mm
    端子位置：ZIG-ZAG
    断开时间：60 µs
    接通时间：260 µs
    Base Number Matches：1
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