BTS430K现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号BTS430K2的Datasheet PDF文件预览

PROFET BTS 430 K2

Smart Highside Power Switch

Features

Product Summary

•

Clamp of negative voltage at output

_OUTAvalanche Clamp

bb (operation)

bb (reverse)

4.5 ... 32

-32

Short-circuit protection

Current limitation

Thermal shutdown

Diagnostic feedback

Open load detection in ON-state

CMOS compatible input

Electrostatic Discharge (ESD) protection

Loss of ground and loss of V protection

Reverse battery protection

mΩ

L(lim)

L(ISO)

Undervoltage and overvoltage shutdown with auto-restart and hysteresis

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

All types of resistive, inductive and capacitve loads

Replaces electromechanical relays and discrete circuits

•

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic fault

feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection

functions.

+ V

Vo lta g e

so urc e

Ga te

Ove rvo lta g e

p ro te c tio n

Curre nt

lim it

p ro te c tio n

Logic

OUT

Lim it fo r

unc la m p e d

ind . lo a d s

Cha rg e p um p

Le ve l shifte r

Vo lta g e

se nso r

Te m p e ra ture

se nso r

Re c tifie r

Op e n c irc uit

d e te c tio n

Load

Lo g ic

ESD

Sho rt c irc uit

d e te c tio n

PROFET

GND

Load GND

Signal GND

Additional external diode required for charged inductive loads

Semiconductor Group

04.96

BTS 430 K2

Symbol

GND

Function

Logic ground

Input, activates the power switch in case of logical high signal

Positive power supply voltage,

the tab is shorted to this pin

Diagnostic feedback, low on failure

Output to the load

OUT

(Load, L)

Maximum Ratings at T^j= 25 °C unless otherwise specified

Parameter

Symbol

Values

Unit

Supply voltage (overvoltage protection see page 3)

V_bb

Load current (Short-circuit current, see page 4)

Operating temperature range

Storage temperature range

I_L

self-limited

-40 ...+150

-55 ...+150

T_j

°C

T_stg

P_tot

E_AS

V_ESD

V_IN

I_IN

Power dissipation (DC)

125

1.7

Inductive load switch-off energy dissipation

Electrostatic discharge capability (ESD)

Input voltage (DC)

Current through input pin (DC)

Current through status pin (DC)

see internal circuit diagrams page 6...

2.0

-10 ... +16

±5.0

I_ST

Thermal resistance

chip - case: R_thJC

chip - ambient: R_thJA

≤ 1 K/W

≤ 75

Semiconductor Group

BTS 430 K2

Electrical Characteristics

Parameter and Conditions

Symbol

Values

Unit

at Tj = 25 °C, V = 12 V unless otherwise specified

min

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

I_L= 2 A

T=25 °C: R_ON

mΩ

T=150 °C:

Nominal load current (pin 3 to 5)

I_L(ISO)

ISO Proposal: V_ON= 0.5 V, T = 85 °C

Output current (pin 5) while GND disconnected or

GND pulled up, see diagram page 7

I_L(GNDhigh)

Turn-on time

Turn-off time

to 90% V_OUT: t_on

to 10% V_OUT: t_off

160

260

µs

R_L= 12 Ω

Slew rate on

10 to 30% V_OUT, R_L= 12 Ω

dV /dt_on

-dV/dt_off

0.4

2 V/µs

4 V/µs

Slew rate off

70 to 40% V_OUT, R_L= 12 Ω

Operating Parameters

Operating voltage

T =-40...+150°C: V_bb(on)

4.5

2.4

Undervoltage shutdown

Undervoltage restart

T =-40...+150°C: V_bb(under)

4.5

7.5

T =-40...+150°C: V_{bb(u rst)}

Undervoltage restart of charge pump

see diagram page 12

V_bb(ucp)

6.5

Undervoltage hysteresis

∆V_bb(under)= V_{bb(u rst)}- V_bb(under)

∆V_bb(under)

0.2

Overvoltage shutdown

Overvoltage restart

Overvoltage hysteresis

Overvoltage protection²⁾

I_bb=4 mA

T =-40...+150°C: V_bb(over)

T =-40...+150°C: V_{bb(o rst)}

T =-40...+150°C: ∆V_bb(over)

0.2

T =-40...+150°C: V_bb(AZ)

Standby current (pin 3)

V_IN=0

I_bb(off)

T_j=-40...+25°C:

T_j=150°C:

µA

Operating current (Pin 1)³⁾, V_IN=5

I_GND

1.1

-- mA

see also V

in table protection functions and circuit diagram page 7. Meassured without load.

ON(CL)

Add I , if I > 0

Semiconductor Group

BTS 430 K2

Parameter and Conditions

Symbol

Values

Unit

at Tj = 25 °C, V = 12 V unless otherwise specified

min

typ

max

Protection Functions

Overload current limit (pin 3 to 5)

T_j=-40...+150°C

I_L(lim)

Short circuit shutdown delay after input pos. slope

V_ON> V_ON(SC)

T_j=-40..+150°C: t_d(SC)

400

µs

min value valid only, if input "low" time exceeds 30 µs

Output clamp (inductive load switch off)

at V_OUT= V_bb- V_ON(CL)

V_ON(CL)

Short circuit shutdown detection voltage

(pin 3 to 5)

V_ON(SC)

T_jt

150

8.3

Thermal overload trip temperature

°C

Thermal hysteresis

Inductive load switch-off energy dissipation⁴⁾,

∆T_jt

E_AS

1.7

1.3

1.0

T_{j Start}= 150 °C

V_bb= 12 V: E_Load12

V_bb= 24 V: E_Load24

Reverse battery (pin 3 to 1) ⁵⁾

Integrated resistor in V_bbline

-V_bb

R_bb

120

Ω

Diagnostic Characteristics

I_{L (OL)}

500 mA

600

Open load detection current

(on-condition, )

T_j=25..150°C:

T_j=-40 °C:

Leakage output current

(off-condition)

I_L(off)

µA

While demagnetizing load inductance, dissipated energy in PROFET is E = V_ON(CL)* i_L(t) dt, approx.

∫

V_ON(CL)

V_ON(CL)- V_bb

= / * L * I * (

), see diagramm page 8

Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.

Reverse current I of ≈ 0.3 A at V = -32 V through the logic heats up the device. Time allowed under

GND

these condition is dependent on the size of the heatsink. Reverse I

can be reduced by an additional

GND

external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and

circuit page 7).

Semiconductor Group

BTS 430 K2

Parameter and Conditions

Symbol

Values

Unit

at Tj = 25 °C, V = 12 V unless otherwise specified

min

typ

max

Input and Status Feedback⁶⁾

Input resistance

R_I

V_IN(T+)

1.5

1.0

2.4

kΩ

see circuit page 6

Input turn-on threshold voltage

T_j=-40..+150°C:

Input turn-off threshold voltage

V_IN(T-)

T_j=-40..+150°C:

Input threshold hysteresis

Off state input current (pin 2)

On state input current (pin 2)

Status valid after input slope

(short circuit)

∆ V_IN(T)

0.5

V_IN= 0.4 V: I_IN(off)

V_IN= 3.5 V: I_IN(on)

T =-40 ... +150°C: t_{d(ST SC)}

µA

200

400

µs

Status valid after input slope

(open load)

T =-40 ... +150°C: t_d(ST)

350

-- 1600

Status output (open drain)

Zener limit voltage T =-40...+150°C, I_ST= +1.6 mA: V_ST(high)

5.4

6.1

6.9

0.4

ST low voltage T =-40...+150°C, I_ST= +1.6 mA: V_ST(low)

Status voltage while V_bb<2.4 V T =25 ... +150°C: V_ST

1.0

1.2

I_ST= 500 µA

T =40°C:

If a ground resistor R

is used, add the voltage drop across this resistor. Internal Z-diode typ. 6.1 V, see

GND

maximum ratings page 2, circuit page 7

Semiconductor Group

BTS 430 K2

Truth Table

Input-

level

Output Status

level

432

E2/F2

432

430

Normal

operation

Open load

)

Short circuit

to GND

Short circuit

to V

H (L )

Overtem-

perature

Under-

voltage

Overvoltage

10)

11)

10)

11)

L = "Low" Level

H = "High" Level

Terms

Status output

+5V

OUT

PROFET

ESD-

GND

OUT

ESD zener diodes are not designed for continuous

current

GND

Short Circuit detection

Fault Condition: V_ON> 8.3 V typ.; IN high

Input circuit (ESD protection)

+ V

ESD-ZD_I

OUT

GND

Short circuit

detection

Logic

unit

ESD zener diodes are not designed for continuous

current

Power Transistor off, high impedance

The short circuit signal from last ON state is latched until next turn-on, see timing diagram page 10

10)

11)

Low resistance short V to output may be detected by no-load-detection

No current sink capability during undervoltage shutdown

Current sink capability see page 5

Semiconductor Group

BTS 430 K2

Inductive and overvoltage output clamp

GND disconnect

+ V

OUT

PROFET

GND

clamped to 50 V typ.

GND

Overvolt. and reverse batt. protection

+ V

Any kind of load. In case of Input=high V_OUT≈ V_I- V_IN(T+)

Due to V_GND>0, no V_S= low signal available.

R_bb

GND disconnect with GND pull up

R_IN

Logic

OUT

R_ST

GND

PROFET

OUT

PROFET

R_GND

Signal GND

GND

120 Ω typ., V 57 V typ., , add R

, R , R for

GND IN ST

extended protection

GND

Open-load detection

Fault Condition: V_ON< R_ON* I_L(OL); IN high

Any kind of load. If V_GND> V_I- V_IN(T+)device stays off

Due to V_GND>0, no V_S= low signal available.

+ V

disconnect with charged inductive

load

V_ON

high

OUT

Open load

detection

Logic

unit

OUT

PROFET

GND

Semiconductor Group

BTS 430 K2

Inductive Load switch-off energy

dissipation

high

OUT

PROFET

Load

GND

O U T

PROFET

G N D

Energy dissipated in PROFET E_AS= E_bb+ E_L- E_R.

Load

< E , E = / * L * I

L L

Semiconductor Group

BTS 430 K2

Options Overview

all versions: High-side switch, Input protection, ESD protection, load dump and

reverse battery protection

Type

BTS 432D2 432E2 432F2 432I 430K2

Logic version

Overtemperature protection

T >150 °C, latch function^{12 13}

)

T >150 °C, with auto-restart on cooling

Short-circuit to GND protection

12)

switches off when V >8.3 V typ.

(when first turned on after approx. 200 µs)

Open load detection

in OFF-state with sensing current 30 µA typ.

in ON-state with sensing voltage drop across

power transistor

Undervoltage shutdown with auto restart

Overvoltage shutdown with auto restart

Status feedback for

overtemperature

15)

short circuit to GND

14)

short to V

open load

undervoltage

overvoltage

Status output type

CMOS

Open drain

Output negative voltage transient limit

(fast inductive load switch off)

to V - V

bb ON(CL)

Load current limit

high level (can handle loads with high inrush currents)

medium level

low level (better protection of application)

12)

Latch except when V -V

< V

after shutdown. In most cases V

= 0 V after shutdown (V

≠

OUT

ON(SC)

OUT

0 V only if forced externally). So the device remains latched unless V < V

(see page 4). No latch

ON(SC)

between turn on and t

With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage

Low resistance short V to output may be detected by no-load-detection

with status latch until next turn on

d(SC)

13)

14)

15)

Semiconductor Group

BTS 430 K2

Timing diagrams

Figure 2b: Switching an inductive load

Figure 1a: V turn on, :

d(bb IN)

d(ST)

OUT

ST open drain

L(OL)

in case of too early V =high the device may not turn on (curve A)

_{d(bb IN)}approx. 150 µs

*) if the time constant of load is too large, open-load-status may

occur

Figure 2a: Switching a lamp,

Figure 3a: Turn on into short circuit,

**)

OUT

d(SC)

typ. t

approx. 200µs, *) depends on history,

d(SC)

**) error signal latched until next turn on

Semiconductor Group

BTS 430 K2

Figure 5a: Open load: detection in ON-state, turn

on/off to open load

Figure 3b: Short circuit while on:

d(ST)

OUT

open

*) error signal latched until next turn on

Figure 5b: Open load: detection in ON-state, open

load occurs in on-state

Figure 4a: Overtemperature:

Reset if T <T

d(OL ST2)

d(ST OL1)

OUT

normal

open

t_{d(ST OL1)}= tbd µs typ., t_{d(ST OL2)}= tbd µs typ

Semiconductor Group

BTS 430 K2

Figure 6a: Undervoltage:

Figure 7a: Overvoltage:

bb(over)

bb(o rst)

ON(CL)

bb(under)

bb(u rst)

OUT

Figure 6b: Undervoltage restart of charge pump

[V]

ON(CL )

off

bb(over)

off

bb(u rst)

bb(o rst)

bb(u cp)

bb(under)

[V]

charge pump starts at V_bb(ucp)6.5 V typ.

Semiconductor Group

BTS 430 K2

Package and Ordering Code

All dimensions in mm

Standard TO-220 AB/5

Ordering code

TO-220 AB/5, OPTION E3043 Ordering code

BTS430K2 E3043

Q67060-S6200-A3

Q67060-S6200-A2

BTS430K2

SMD TO-220 AB/5, OPTION E3122

Ordering code

BTS430K2 E3122A T&R:

Q67060-S6200-A4

Changed since 04/96

Case E3122A drawing changed

Semiconductor Group

BTS430K相关文章

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BTS430K2产品参数

型号:	BTS430K2
生命周期：	Obsolete
IHS 制造商：	INFINEON TECHNOLOGIES AG
零件包装代码：	TO-220AB
包装说明：	ZIP, ZIP5,.15,.2,67TB
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
风险等级：	5.32
内置保护：	TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
驱动器位数：	1
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：	R-PZFM-T5
功能数量：	1
端子数量：	5
输出电流流向：	SOURCE
标称输出峰值电流：	11 A
封装主体材料：	PLASTIC/EPOXY
封装代码：	ZIP
封装等效代码：	ZIP5,.15,.2,67TB
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
电源：	4.5/32 V
认证状态：	Not Qualified
子类别：	Peripheral Drivers
最大供电电压：	32 V
最小供电电压：	4.5 V
标称供电电压：	12 V
表面贴装：	NO
端子形式：	THROUGH-HOLE
端子节距：	1.7 mm
端子位置：	ZIG-ZAG
断开时间：	60 µs
接通时间：	260 µs
Base Number Matches：	1

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