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产品型号BUK7225-55A的概述

BUK7225-55A芯片概述与应用分析一、芯片概述 BUK7225-55A是由NXP Semiconductors生产的一款先进的N沟道功率MOSFET（金属氧化物半导体场效应晶体管），专为高效率和高性能的电源管理应用而设计。其典型的应用范围包括电机驱动、开关电源、LED驱动和其他需要开关控制的电子设备。作为N沟道MOSFET，BUK7225-55A具有较低的导通电阻和良好的散热性能，使其在高频和高电流负载下运行时能够保持较低的温度，提高整体系统的稳定性。二、详细参数 BUK7225-55A的关键参数包括： 1. 最大漏源电压（V_DS）：该芯片的最大漏源电压可达到55V，适合高电压环境下的应用。 2. 最大漏极电流（I_D）：该器件能够承受的最大漏极电流为75A，适合高功率负载的驱动。 3. 导通电阻（R_DS(on)）：BUK7225-55A的导通电阻在V_GS =...

产品型号BUK7225-55A的Datasheet PDF文件预览

BUK7225-55A

TrenchMOS™ standard level FET

Rev. 01 — 17 April 2001

Product speciﬁcation

M3D300

1. Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

TrenchMOS™¹technology, featuring very low on-state resistance.

Product availability:

BUK7225-55A in SOT428 (D-PAK).

2. Features

■ TrenchMOS™ technology

■ Q101 compliant

■ 175 °C rated

■ Standard level compatible.

3. Applications

■ Automotive and general purpose power switching:

◆ 12 V and 24 V loads

◆ Motors, lamps and solenoids.

4. Pinning information

Table 1: Pinning - SOT428 (D-PAK), simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

drain (d)

source (s)

drain (d)

MBB076

Top view

MBK091

SOT428 (D-PAK)

1. TrenchMOS is a trademark of Royal Philips Electronics.

BUK7225-55A

TrenchMOS™ standard level FET

Philips Semiconductors

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter

Conditions

Typ

−

Max

Unit

V_DS

I_D

drain-source voltage (DC)

drain current (DC)

T_mb= 25 °C; V_GS= 10 V

T_mb= 25 °C

−

P_tot

T_j

total power dissipation

junction temperature

−

175

°C

R_DSon

drain-source on-state resistance

V_GS= 10 V; I_D= 25 A

T_j= 25 °C

mΩ

T_j= 175 °C

−

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

−

Max

Unit

V_DS

V_DGR

V_GS

I_D

drain-source voltage (DC)

drain-gate voltage (DC)

gate-source voltage (DC)

drain current (DC)

R_GS= 20 kΩ

−

±20

T_mb= 25 °C; V_GS= 10 V; Figure 2 and 3

T_mb= 100 °C; V_GS= 10 V; Figure 2

T_mb= 25 °C; pulsed; t_p≤ 10 µs; Figure 3

T_mb= 25 °C; Figure 1

−

I_DM

P_tot

T_stg

T_j

peak drain current

[1] −

173

total power dissipation

storage temperature

−

°C

−55

+175

operating junction temperature

Source-drain diode

I_DR

reverse drain current (DC)

pulsed reverse drain current

T_mb= 25 °C

−

I_DRM

T_mb= 25 °C; pulsed; t_p≤ 10 µs

173

Avalanche ruggedness

W_DSS

non-repetitive avalanche energy

unclamped inductive load; I_D= 43 A;

−

123

V_DS≤ 55 V; V_GS= 10 V; R_GS= 50 Ω;

starting T _j= 25 °C

[1] I_DMis limited by chip, not package.

9397 750 08222

Product speciﬁcation

Rev. 01 — 17 April 2001

2 of 13

BUK7225-55A

TrenchMOS™ standard level FET

Philips Semiconductors

03aa24

03aa16

120

der

(%)

100

120

100

der

(%)

75 100 125 150 175 200

100

150

200

(^oC)

( C)

_GS≥ 4.5 V

P_tot

P_der

× 100%

----------------------

I_D

tot(25 C)

I_der

× 100%

------------------

D(25 C)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

(A)

= V / I

DS D

DSon

= 10 us

100 us

1 ms

δ =

D.C.

10 ms

100 ms

(V)

T_mb= 25 °C; I_DMis single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 08222

Product speciﬁcation

Rev. 01 — 17 April 2001

3 of 13

BUK7225-55A

TrenchMOS™ standard level FET

Philips Semiconductors

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol

R_th(j-a)

Parameter

Conditions

Value

71.4

1.6

Unit

K/W

thermal resistance from junction to ambient

minimum footprint, FR4 board

R_th(j-mb)

thermal resistance from junction to mounting Figure 4

base

7.1 Transient thermal impedance

th(j-mb)

(K/W)

δ = 0.5

0.2

0.1

-1

0.05

δ =

0.02

Single Shot

-2

-6

-5

-4

-3

-2

-1

(s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 08222

Product speciﬁcation

Rev. 01 — 17 April 2001

4 of 13

BUK7225-55A

TrenchMOS™ standard level FET

Philips Semiconductors

8. Characteristics

Table 5: Characteristics

T_j= 25 °C unless otherwise speciﬁed

Symbol

Static characteristics

V_(BR)DSSdrain-source breakdown

voltage

Parameter

Conditions

Min

Typ

Max

Unit

I_D= 0.25 mA; V_GS= 0 V

T_j= 25 °C

−

T_j= −55 °C

V_GS(th)

gate-source threshold voltage I_D= 1 mA; V_DS= V_GS

Figure 9

T_j= 25 °C

;

−

T_j= 175 °C

T_j= −55 °C

−

4.4

I_DSS

drain-source leakage current V_DS= 55 V; V_GS= 0 V

T_j= 25 °C

T_j= 175 °C

−

0.05

−

µA

500

100

I_GSS

gate-source leakage current V_GS= ±20 V; V_DS= 0 V

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 25 A;

Figure 7 and 8

T_j= 25 °C

−

mΩ

T_j= 175 °C

−

Dynamic characteristics

C_iss

C_oss

C_rss

t_d(on)

t_r

input capacitance

output capacitance

reverse transfer capacitance

turn-on delay time

rise time

V_GS= 0 V; V_DS= 25 V;

f = 1 MHz; Figure 12

−

980

240

150

1310

290

210

−

V_DD= 30 V; R_L= 1.2 Ω;

V_GS= 10 V; R_G= 10 Ω;

−

t_d(off)

t_f

turn-off delay time

fall time

−

L_d

internal drain inductance

measured from drain to

centre of die

2.5

−

L_s

internal source inductance

measured from source lead

to source bond pad

−

7.5

−

9397 750 08222

Product speciﬁcation

Rev. 01 — 17 April 2001

5 of 13

BUK7225-55A

TrenchMOS™ standard level FET

Philips Semiconductors

Table 5: Characteristics…continued

T_j= 25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Source-drain diode

V_SD

source-drain (diode forward) I_S= 20 A; V_GS= 0 V;

−

0.85

1.2

voltage

Figure 15

t_rr

reverse recovery time

recovered charge

I_S= 20 A; dI_S/dt = −100 A/µs

V_GS= −10 V; V_DS= 30 V

−

Q_r

102

03nb70

03nb71

180

(V)=12

14 16 18

(A)

DSon

(mΩ)

160

140

120

100

9.5

8.5

7.5

6.5

5.5

4.5

(V)

T_j= 25 °C

T_j= 25 °C; I_D= 25 A

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values.

03ne89

03nb72

2.2

DSon

(V) =

5.5

6.5

(mΩ)

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

100

120

140

(A)

-60

-20

100

140

180

T ( C)

T_j= 25 °C

R_DSon

a =

---------------------------

R_{DSon(25 C)}

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8. Normalized drain source on-state resistance

factor as a function of junction temperature.

9397 750 08222

Product speciﬁcation

Rev. 01 — 17 April 2001

6 of 13

BUK7225-55A

TrenchMOS™ standard level FET

Philips Semiconductors

03aa32

03aa35

-1

-2

-3

-4

-5

-6

4.5

GS(th)

(A)

(V)

max.

3.5

typ.

min

2.5

min

typ

max

1.5

0.5

-60

-20

100

140

180

T ( C)

(V)

I_D= 1 mA; V_DS= V_GS

T_j= 25 °C; V_DS= V_GS

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

03nb73

03nb68

2000

iss

(S)

iss

1800

1600

1400

1200

1000

800

600

400

200

oss

rss

oss

(pF)

rss

-2

-1

(V)

(A)

T_j= 25 °C; V_DS= 25 V

V_GS= 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of

drain current; typical values.

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

9397 750 08222

Product speciﬁcation

Rev. 01 — 17 April 2001

7 of 13

BUK7225-55A

TrenchMOS™ standard level FET

Philips Semiconductors

03nb67

03nb69

(V)

(A)

= 14 V

= 44 V

T = 25

T = 175 ^O

(nC)

(V)

V_DS= 25 V

T_j= 25 °C; I_D= 25 A

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 14. Gate-source voltage as a function of turn-on

gate charge; typical values.

03nb66

120

(A)

100

T = 175 ^O

T = 25 ^O

0.0

0.5

1.0

1.5

(V)

V_GS= 0 V

Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.

9397 750 08222

Product speciﬁcation

Rev. 01 — 17 April 2001

8 of 13

BUK7225-55A

TrenchMOS™ standard level FET

Philips Semiconductors

9. Package outline

Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads

(one lead cropped)

SOT428

seating plane

mounting

base

20 mm

scale

DIMENSIONS (mm are the original dimensions)

max.

min.

max.

(1)

UNIT

max.

min.

max.

0.65 0.89

0.45 0.71

0.7

0.5

2.38

2.22

0.89 1.1

0.71 0.9

5.36

5.26

0.4 6.22

0.2 5.98

6.73

6.47

10.4 2.95

9.6

2.55

4.81

4.45

4.57

0.2

4.0 2.285

0.5

Note

1. Measured from heatsink back to lead.

REFERENCES

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

JEDEC

EIAJ

98-04-07

99-09-13

SOT428

TO-252

SC-63

Fig 16. SOT428 (D-PAK).

9397 750 08222

Product speciﬁcation

Rev. 01 — 17 April 2001

9 of 13

BUK7225-55A

TrenchMOS™ standard level FET

Philips Semiconductors

10. Revision history

Table 6: Revision history

Rev Date

CPCN

Description

01 20010417

Product speciﬁcation; initial version.

9397 750 08222

Product speciﬁcation

Rev. 01 — 17 April 2001

10 of 13

BUK7225-55A

TrenchMOS™ standard level FET

Philips Semiconductors

11. Data sheet status

[1]

[2]

Data sheet status

Product status

Deﬁnition

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors

reserves the right to change the speciﬁcation in any manner without notice.

Preliminary data

Product data

Qualiﬁcation

Production

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a

later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to

improve the design and supply the best possible product.

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to

make changes at any time in order to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change Notiﬁcation (CPCN) procedure

SNW-SQ-650A.

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

12. Deﬁnitions

13. Disclaimers

Short-form speciﬁcation — The data in

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

short-form speciﬁcation is

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Right to make changes — Philips Semiconductors reserves the right to

make changes, without notice, in the products, including circuits, standard

cells, and/or software, described or contained herein in order to improve

design and/or performance. Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

licence or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products

are free from patent, copyright, or mask work right infringement, unless

otherwise speciﬁed.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

9397 750 08222

Product speciﬁcation

Rev. 01 — 17 April 2001

11 of 13

BUK7225-55A

TrenchMOS™ standard level FET

Philips Semiconductors

Philips Semiconductors - a worldwide company

Argentina: see South America

Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399

New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811

Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341

Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474

Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001

Portugal: see Spain

Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139

Austria: Tel. +43 160 101, Fax. +43 160 101 1210

Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773

Belgium: see The Netherlands

Brazil: see South America

Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102

Canada: Tel. +1 800 234 7381

Romania: see Italy

Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700

Colombia: see South America

Czech Republic: see Austria

Slovenia: see Italy

Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044

Finland: Tel. +358 961 5800, Fax. +358 96 158 0920

France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638

Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300

Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800

India: Tel. +91 22 493 8541, Fax. +91 22 493 8722

Indonesia: see Singapore

South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398

South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849

Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107

Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745

Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730

Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874

Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447

Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813

Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421

United States: Tel. +1 800 234 7381

Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200

Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007

Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800

Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057

Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415

Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880

Mexico: Tel. +9-5 800 234 7381

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553

Middle East: see Italy

For all other countries apply to: Philips Semiconductors,

Marketing Communications,

Internet: http://www.semiconductors.philips.com

Building BE, P.O. Box 218, 5600 MD EINDHOVEN,

The Netherlands, Fax. +31 40 272 4825

(SCA72)

9397 750 08222

Product speciﬁcation

Rev. 01 — 17 April 2001

12 of 13

BUK7225-55A

TrenchMOS™ standard level FET

Philips Semiconductors

Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Transient thermal impedance . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

7.1

Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner.

The information presented in this document does not form part of any quotation or

contract, is believed to be accurate and reliable and may be changed without notice. No

liability will be accepted by the publisher for any consequence of its use. Publication

thereof does not convey nor imply any license under patent- or other industrial or

intellectual property rights.

Date of release: 17 April 2001

Document order number: 9397 750 08222

BUK7225-55A相关文章

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BUK7225-55A产品参数

型号:	BUK7225-55A
是否Rohs认证：	符合
生命周期：	Obsolete
包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	not_compliant
风险等级：	5.76
雪崩能效等级（Eas）：	123 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	55 V
最大漏极电流 (ID)：	43 A
最大漏源导通电阻：	0.025 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	173 A
表面贴装：	YES
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号BUK7225-55A的概述

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