N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 JUNE 94
ZVN4206C
FEATURES
*
*
60 Volt VDS
RDS(on) = 1 Ω
G
D
S
E-LINE
TO92 COMPATIBLE
REFER TO ZVN4206A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
UNIT
V
Drain-Source Voltage
60
600
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
ID
mA
A
IDM
8
Gate-Source Voltage
VGS
V
± 20
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
0.7
W
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
60
V
ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
1.3
3
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
IDSS
100
nA
V
V
GS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
10
100
DS=60V, VGS=0
µA
µA
VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
3
A
VDS=25V, VGS=10V
Static Drain-Source On-State RDS(on)
Resistance (1)
1
1.5
VGS=10V,ID=1.5A
VGS=5V,ID=500mA
Ω
Ω
Forward Transconductance(1)(2gfs
)
300
mS
VDS=25V,ID=1.5A
Input Capacitance (2)
Ciss
100
60
pF
pF
Common Source Output
Capacitance (2)
Coss
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
20
pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
td(on)
tr
td(off)
tf
8
ns
ns
ns
ns
12
12
15
VDD≈25V, ID=1.5A
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
(
3-387