SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4306G
ISSUE 3 - OCTOBER 1995
FEATURES
*
Very low RDS(ON) = .33Ω
D
APPLICATIONS
*
*
DC - DC Converters
Solenoids/Relay Drivers for Autom otive
S
PARTMARKING DETAIL -
ZVN4306
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
UNIT
Drain-Source Voltage
60
V
A
Continuous Drain Current at Tam b=25°C
Pulsed Drain Current
ID
2.1
IDM
15
± 20
A
Gate Source Voltage
VGS
V
Power Dissipation at Tam b=25°C
Operating and Storage Tem perature Range
ELECTRICAL CHARACTERISTICS (at T
Ptot
3
W
°C
Tj:Tstg
-55 to +150
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
60
V
ID=1m A, VGS=0V
ID=1m A, VDS= VGS
Gate-Source Threshold VGS(th)
Voltage
1.3
3
V
Gate-Body Leakage
IGSS
IDSS
20
nA
V
GS=± 20V, VDS=0V
VDS=60V, VGS=0V
DS=48V, VGS=0V, T=125°C(2)
Zero Gate Voltage
Drain Current
10
100
µA
µA
V
On-State Drain
Current(1)
ID(on)
RDS(on)
gfs
12
A
VDS=10V, VGS=10V
Static Drain-Source
On-State Resistance (1)
0.22
0.32
0.33
0.45
VGS=10V, ID=3A
VGS=5V, ID=1.5A
Ω
Ω
Forward
0.7
S
VDS=25V,ID=3A
Transconductance (1)
Input Capacitance (2)
Ciss
350
140
pF
pF
Comm on Source
Coss
VDS=25 V, VGS=0V, f=1MHz
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Crss
30
8
pF
ns
Turn-On Delay Tim e
(2)(3)
td(on)
VDD≈25V, VGEN=10V, ID=3A
Rise Tim e (2)(3)
tr
25
30
ns
ns
Turn-Off Delay Tim e
(2)(3)
td(off)
Fall Tim e (2)(3)
tf
16
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
Spice param eter data is available upon request for this device
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